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K9F4G08U0A-I中文資料三星數據手冊PDF規(guī)格書

K9F4G08U0A-I
廠商型號

K9F4G08U0A-I

功能描述

FLASH MEMORY

文件大小

1.1455 Mbytes

頁面數量

43

生產廠商 Samsung semiconductor
企業(yè)簡稱

Samsung三星

中文名稱

三星半導體官網

原廠標識
數據手冊

下載地址一下載地址二到原廠下載

更新時間

2024-11-18 22:58:00

K9F4G08U0A-I規(guī)格書詳情

GENERAL DESCRIPTION

Offered in 512Mx8bit, the K9F4G08U0A is a 4G-bit NAND Flash Memory with spare 128M-bit. Its NAND cell provides the most cost effective solution for the solid state application market. A program operation can be performed in typical 200μs on the (2K+64)Byte page and an erase operation can be performed in typical 1.5ms on a (128K+4K)Byte block. Data in the data register can be read out at 25ns cycle time per Byte. The I/O pins serve as the ports for address and data input/output as well as command input. The on-chip write controller automates all program and erase functions including pulse repetition, where required, and internal verification and margining of data. Even the write-intensive systems can take advantage of the K9F4G08U0A′s extended reliability of 100K program/erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm. The K9F4G08U0A is an optimum solution for large nonvolatile storage applications such as solid state file storage and other portable applications requiring non-volatility.

FEATURES

? Voltage Supply

- 2.70V ~ 3.60V

? Organization

- Memory Cell Array : (512M + 16M) x 8bit

- Data Register : (2K + 64) x 8bit

? Automatic Program and Erase

- Page Program : (2K + 64)Byte

- Block Erase : (128K + 4K)Byte

? Page Read Operation

- Page Size : (2K + 64)Byte

- Random Read : 25μs(Max.)

- Serial Access : 25ns(Min.)

? Fast Write Cycle Time

- Page Program time : 200μs(Typ.)

- Block Erase Time : 1.5ms(Typ.)

? Command/Address/Data Multiplexed I/O Port

? Hardware Data Protection

- Program/Erase Lockout During Power Transitions

? Reliable CMOS Floating-Gate Technology

-Endurance : 100K Program/Erase Cycles(with 1bit/512Byte ECC)

- Data Retention : 10 Years

? Command Driven Operation

? Intelligent Copy-Back with internal 1bit/528Byte EDC

? Unique ID for Copyright Protection

? Package :

- K9F4G08U0A-PCB0/PIB0

48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)

- K9F4G08U0A-ICB0/IIB0

52 - Pin ULGA (12 x 17 / 1.00 mm pitch)

- K9K8G08U1A-ICB0/IIB0

52 - Pin ULGA (12 x 17 / 1.00 mm pitch)

產品屬性

  • 型號:

    K9F4G08U0A-I

  • 制造商:

    SAMSUNG

  • 制造商全稱:

    Samsung semiconductor

  • 功能描述:

    FLASH MEMORY

供應商 型號 品牌 批號 封裝 庫存 備注 價格
SAMSUNG
2016+
TSOP48
500
只做原裝,假一罰十,公司優(yōu)勢內存型號!
詢價
OKI
23+
LQFP-144
6500
全新原裝假一賠十
詢價
SAMSUNG
2016+
QFN
6528
只做進口原裝現貨!假一賠十!
詢價
SAMSUNG/三星
2052+
QFN
6542
只做原裝正品現貨!或訂貨假一賠十!
詢價
SAMSUNG
2021+
TSOP48
6040
百分百原裝正品
詢價
SAMSUNG/三星
23+
QFN
13000
原廠授權一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種
詢價
SAMSUNG/三星
21+
QFN
8000
全新原裝 公司現貨 價格優(yōu)
詢價
Samsung
23+
NA
3519
專做原裝正品,假一罰百!
詢價
SAMSUNG/三星
10+
ULGA52
15641
只做原廠原裝,認準寶芯創(chuàng)配單專家
詢價
SAMSUNG
QFN
96500
一級代理 原裝正品假一罰十價格優(yōu)勢長期供貨
詢價