| 零件編號(hào) | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
|---|---|---|---|---|
K9F1G08 | 1Gb NAND Flash Offeredin128Mx8bit,theK9F1G08X0Disa1G-bitNANDFlashMemorywithspare32M-bit.ItsNANDcellprovidesthemostcosteffectivesolutionforthesolidstateapplicationmarket.Aprogramoperationcanbeperformedintypical250μsonthe(2K+64)Bytepageandaneraseoperationcanbeperformed | SamsungSamsung semiconductor 三星三星半導(dǎo)體 | Samsung | |
K9F1G08 | FLASH MEMORY GENERALDESCRIPTION Offeredin128Mx8bitor64Mx16bit,theK9F1GXXX0Mis1Gbitwithspare32Mbitcapacity.ItsNANDcellprovidesthemostcosteffectivesolutionforthesolidstatemassstoragemarket.Aprogramoperationcanbeperformedintypical300msonthe2112-byte(X8device)or1056-w | SamsungSamsung semiconductor 三星三星半導(dǎo)體 | Samsung | |
K9F1G08 | 1Gb E-die NAND Flash | SamsungSamsung semiconductor 三星三星半導(dǎo)體 | Samsung | |
128M x 8 Bit / 64M x 16 Bit NAND Flash Memory GENERALDESCRIPTION Offeredin128Mx8bitor64Mx16bit,theK9F1GXXX0Mis1Gbitwithspare32Mbitcapacity.ItsNANDcellprovidesthemostcosteffectivesolutionforthesolidstatemassstoragemarket.Aprogramoperationcanbeperformedintypical300msonthe2112-byte(X8device)or1056-w | SamsungSamsung semiconductor 三星三星半導(dǎo)體 | Samsung | ||
FLASH MEMORY GENERALDESCRIPTION Offeredin128Mx8bitor64Mx16bit,theK9F1GXXX0Mis1Gbitwithspare32Mbitcapacity.ItsNANDcellprovidesthemostcosteffectivesolutionforthesolidstatemassstoragemarket.Aprogramoperationcanbeperformedintypical300msonthe2112-byte(X8device)or1056-w | SamsungSamsung semiconductor 三星三星半導(dǎo)體 | Samsung | ||
128M x 8 Bit / 64M x 16 Bit NAND Flash Memory GENERALDESCRIPTION Offeredin128Mx8bitor64Mx16bit,theK9F1GXXX0Mis1Gbitwithspare32Mbitcapacity.ItsNANDcellprovidesthemostcosteffectivesolutionforthesolidstatemassstoragemarket.Aprogramoperationcanbeperformedintypical300msonthe2112-byte(X8device)or1056-w | SamsungSamsung semiconductor 三星三星半導(dǎo)體 | Samsung | ||
FLASH MEMORY GENERALDESCRIPTION Offeredin128Mx8bitor64Mx16bit,theK9F1GXXX0Mis1Gbitwithspare32Mbitcapacity.ItsNANDcellprovidesthemostcosteffectivesolutionforthesolidstatemassstoragemarket.Aprogramoperationcanbeperformedintypical300msonthe2112-byte(X8device)or1056-w | SamsungSamsung semiconductor 三星三星半導(dǎo)體 | Samsung | ||
128M x 8 Bit NAND Flash Memory GENERALDESCRIPTION Offeredin128Mx8bit,theK9F1G08U0Bisa1G-bitNANDFlashMemorywithspare32M-bit.ItsNANDcellprovidesthemostcosteffectivesolutionforthesolidstateapplicationmarket.Aprogramoperationcanbeperformedintypical200μsonthe(2K+64)Bytepageandaneraseope | SamsungSamsung semiconductor 三星三星半導(dǎo)體 | Samsung | ||
128M x 8 Bit NAND Flash Memory GENERALDESCRIPTION Offeredin128Mx8bit,theK9F1G08U0Bisa1G-bitNANDFlashMemorywithspare32M-bit.ItsNANDcellprovidesthemostcosteffectivesolutionforthesolidstateapplicationmarket.Aprogramoperationcanbeperformedintypical200μsonthe(2K+64)Bytepageandaneraseope | SamsungSamsung semiconductor 三星三星半導(dǎo)體 | Samsung | ||
1Gb NAND Flash Offeredin128Mx8bit,theK9F1G08X0Disa1G-bitNANDFlashMemorywithspare32M-bit.ItsNANDcellprovidesthemostcosteffectivesolutionforthesolidstateapplicationmarket.Aprogramoperationcanbeperformedintypical250μsonthe(2K+64)Bytepageandaneraseoperationcanbeperformed | SamsungSamsung semiconductor 三星三星半導(dǎo)體 | Samsung | ||
1Gb NAND Flash Offeredin128Mx8bit,theK9F1G08X0Disa1G-bitNANDFlashMemorywithspare32M-bit.ItsNANDcellprovidesthemostcosteffectivesolutionforthesolidstateapplicationmarket.Aprogramoperationcanbeperformedintypical250μsonthe(2K+64)Bytepageandaneraseoperationcanbeperformed | SamsungSamsung semiconductor 三星三星半導(dǎo)體 | Samsung | ||
1Gb NAND Flash Offeredin128Mx8bit,theK9F1G08X0Disa1G-bitNANDFlashMemorywithspare32M-bit.ItsNANDcellprovidesthemostcosteffectivesolutionforthesolidstateapplicationmarket.Aprogramoperationcanbeperformedintypical250μsonthe(2K+64)Bytepageandaneraseoperationcanbeperformed | SamsungSamsung semiconductor 三星三星半導(dǎo)體 | Samsung | ||
128M x 8 Bit / 64M x 16 Bit NAND Flash Memory GENERALDESCRIPTION Offeredin128Mx8bitor64Mx16bit,theK9F1GXXX0Mis1Gbitwithspare32Mbitcapacity.ItsNANDcellprovidesthemostcosteffectivesolutionforthesolidstatemassstoragemarket.Aprogramoperationcanbeperformedintypical300msonthe2112-byte(X8device)or1056-w | SamsungSamsung semiconductor 三星三星半導(dǎo)體 | Samsung | ||
1Gb Gb 1.8V NAND Flash Errata | SamsungSamsung semiconductor 三星三星半導(dǎo)體 | Samsung | ||
1Gb Gb 1.8V NAND Flash Errata | SamsungSamsung semiconductor 三星三星半導(dǎo)體 | Samsung | ||
1Gb Gb 1.8V NAND Flash Errata | SamsungSamsung semiconductor 三星三星半導(dǎo)體 | Samsung | ||
1Gb Gb 1.8V NAND Flash Errata | SamsungSamsung semiconductor 三星三星半導(dǎo)體 | Samsung | ||
128M x 8 Bit / 256M x 8 Bit NAND Flash Memory | SamsungSamsung semiconductor 三星三星半導(dǎo)體 | Samsung | ||
USB 2.0 high-speed Flash drive controller | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | ||
128M x 8 Bit / 256M x 8 Bit NAND Flash Memory | SamsungSamsung semiconductor 三星三星半導(dǎo)體 | Samsung |
詳細(xì)參數(shù)
- 型號(hào)：
K9F1G08
- 制造商：
Samsung Semiconductor
- 功能描述：
1GB SLC NORMAL X8 FBGA - Trays
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
SAMSUNG |
23+ |
BGA |
20000 |
全新原裝熱賣/假一罰十!更多數(shù)量可訂貨 |
詢價(jià) | ||
SAMSUNG |
1815+ |
TSOP |
6528 |
只做原裝正品假一賠十為客戶做到零風(fēng)險(xiǎn)!! |
詢價(jià) | ||
6000 |
面議 |
19 |
DIP/SMD |
詢價(jià) | |||
SAMSUNG/三星 |
2021+ |
BGA |
100500 |
一級(jí)代理專營(yíng)品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,長(zhǎng)期排單到貨 |
詢價(jià) | ||
SAMSUNG/三星 |
19+ |
BGA |
12805 |
進(jìn)口原裝現(xiàn)貨 |
詢價(jià) | ||
SAMSUNG/三星 |
23+ |
TSOP |
13000 |
原廠授權(quán)一級(jí)代理,專業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種 |
詢價(jià) | ||
N/A |
2023+環(huán)?，F(xiàn)貨 |
絕對(duì)原裝正品!! |
4425 |
專注軍工、汽車、醫(yī)療、工業(yè)等方案配套一站式服務(wù) |
詢價(jià) | ||
SAMSUNG |
09+ |
TSSOP |
5500 |
原裝無鉛,優(yōu)勢(shì)熱賣 |
詢價(jià) | ||
SAMSUNG |
13+/14+ |
TSOP48 |
10000 |
全新原裝 |
詢價(jià) | ||
SAMSUNG |
TSOP |
08+ |
333 |
全新原裝進(jìn)口自己庫存優(yōu)勢(shì) |
詢價(jià) |
相關(guān)規(guī)格書
更多- K9F1G08B0C-PCB0T00
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相關(guān)庫存
更多- K9F1G08D0M
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