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MPC941

LowVoltage,1:27ClockDistributionChip

LowVoltage,1:27ClockDistributionChip TheMPC941isa1:27lowvoltageclockdistributionchip.ThedevicefeaturesthecapabilitytoselecteitheradifferentialLVPECLoranLVCMOScompatibleinput.The27outputsareLVCMOScompatibleandfeaturethedrivestrengthtodrive50?seriesor

IDT

Integrated Device Technology, Inc.

MPC941

LowVoltage,1:27ClockDistributionChip

TheMPC941isa1:27lowvoltageclockdistributionchip.Thedevicefeatures thecapabilitytoselecteitheradifferentialLVPECLoranLVCMOScompatible input.The27outputsareLVCMOScompatibleandfeaturethedrivestrengthto drive50?seriesorparallelterminatedtransmissionlines.

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NTE941

IntegratedCircuitOperationalAmplifier

Description: TheNTE941MandNTE941SM(SurfaceMount)aregeneralpurposeoperationalamplifiersin 8–LeadDIPtypepackagesandoffermanyfeatureswhichmaketheirapplicationnearlyfoolproof: overloadprotectionontheinputandoutput,nolatch–upwhenthecommonmoderangeisexceed

NTE

NTE Electronics

NTE941D

IntegratedCircuitOperationalAmplifier

Description: TheNTE941Disageneralpurposeoperationalamplifierina14–LeadDIPtypepackageandoffersmanyfeatureswhichmakeitsapplicationnearlyfoolproof:overloadprotectionontheinputandoutput,nolatch–upwhenthecommonmoderangeisexceeded,aswellasfreedomfromoscill

NTE

NTE Electronics

NTE941M

IntegratedCircuitOperationalAmplifier

Description: TheNTE941MandNTE941SM(SurfaceMount)aregeneralpurposeoperationalamplifiersin 8–LeadDIPtypepackagesandoffermanyfeatureswhichmaketheirapplicationnearlyfoolproof: overloadprotectionontheinputandoutput,nolatch–upwhenthecommonmoderangeisexceed

NTE

NTE Electronics

NTE941S

IntegratedCircuitOperationalAmplifier

NTE

NTE Electronics

NTE941SM

IntegratedCircuitOperationalAmplifier

Description: TheNTE941MandNTE941SM(SurfaceMount)aregeneralpurposeoperationalamplifiersin 8–LeadDIPtypepackagesandoffermanyfeatureswhichmaketheirapplicationnearlyfoolproof: overloadprotectionontheinputandoutput,nolatch–upwhenthecommonmoderangeisexceed

NTE

NTE Electronics

PBR941

UHFwidebandtransistor

DESCRIPTION SiliconNPNtransistorinasurfacemount3-pinSOT23package.ThetransistorisprimarilyintendedforwidebandapplicationsintheGHz-rangeintheRFfrontendofanaloganddigitalcellulartelephones,cordlessphones,radardetectors,pagersandsatelliteTV-tuners. FEATURES ?

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PBR941

RFManual16thedition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

PBR941

iscSiliconNPNRFTransistor

DESCRIPTION ·Highgainbandwidthproduct fT=8GHz(Typ)@VCE=6V,IC=30mA,f=1GHz ·Highgain,lownoisefigure ︱S21e︱2=12dB@VCE=6V,IC=30mA,f=1GHz NF=2dB(Typ)@VCE=6V,IC=5mA,f=1GHz ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

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6000
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1926+
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6852
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10000
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7600
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更多K941供應(yīng)商 更新時(shí)間2025-4-16 15:30:00

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