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K8A56ETC中文資料三星數(shù)據(jù)手冊PDF規(guī)格書

K8A56ETC
廠商型號

K8A56ETC

功能描述

256Mb C-die NOR FLASH

文件大小

1.17087 Mbytes

頁面數(shù)量

64

生產(chǎn)廠商 Samsung semiconductor
企業(yè)簡稱

Samsung三星

中文名稱

三星半導體官網(wǎng)

原廠標識
數(shù)據(jù)手冊

下載地址一下載地址二到原廠下載

更新時間

2025-5-24 11:10:00

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K8A56ETC規(guī)格書詳情

256M Bit (16M x16) Synch Burst , Multi Bank SLC NOR Flash Memory

GENERAL DESCRIPTION

The K8A(56/57)15E featuring single 1.8V power supply is a 256Mbit Burst Multi Bank Flash Memory organized as 16Mx16. The memory architecture of the device is designed to divide its memory arrays into 256 blocks(Uniform block part)/259 blocks(Boot block part) with independent hardware protection. This block architecture provides highly flexible erase and program capability. The K8A(56/57)15E NOR Flash consists of sixteen banks. This device is capable of reading data from one bank while programming or erasing in the other bank.

Regarding read access time, the K8A5615E provides an 11ns burst access time and an 95ns initial access time at 66MHz. At 83MHz, the K8A5615E provides an 9ns burst access time and an 95ns initial access time. At 108MHz, the K8A5715E provides an 7ns burst access time and an 95ns initial access time. At 133MHz, the K8A5715E provides an 6ns burst access time and an 95ns initial access time.

FEATURES

? Single Voltage, 1.7V to 1.95V for Read and Write operations

? Organization

- 16,777,216 x 16 bit ( Word Mode Only)

? Read While Program/Erase Operation

? Multiple Bank Architecture

- 16 Banks (16Mb Partition)

? OTP Block : Extra 512-Word block

? Read Access Time (@ CL=30pF)

- Asynchronous Random Access Time : 100ns

- Synchronous Random Access Time :95ns

- Burst Access Time :

11ns(66Mhz) / 9ns(83Mhz) / 7ns (108MHz) / 6ns (133MHz)

? Page Mode Operation

16Words Page access allows fast asynchronous read

Page Read Access Time :

18ns(66/83Mhz) / 15ns(108/133Mhz)

? Burst Length :

- Continuous Linear Burst

- Linear Burst : 8-word & 16-word with Wrap

? Block Architecture

- Uniform block part (K8A(56/57)15EZC) : Two hundred fifty-six 64Kword blocks

- Boot block part (K8A(56/57)15ET(B)C) : Four 16Kword blocks and two hundred fifty-five 64Kword blocks (Bank 0 contains four 16 Kword blocks and fifteen 64Kword blocks, Bank 1 ~ Bank 15 contain two hundred forty 64Kword blocks)

? Reduce program time using the VPP

? Support 32-word Buffer Program

? Power Consumption (Typical value, CL=30pF)

- Synchronous Read Current : 35mA

- Program/Erase Current : 25mA

- Read While Program/Erase Current : 45mA

- Standby Mode/Auto Sleep Mode : 30uA

? Block Protection/Unprotection

- Using the software command sequence

- Last two boot blocks are protected by WP=VIL

(Boot block part : K8A(56/57)15ET(B)C)

- Last one block (BA255) is protected by WP=VIL

(Uniform block part : K8A(56/57)15EZC)

- All blocks are protected by VPP=VIL

? Handshaking Feature

- Provides host system with minimum latency by monitoring RDY

? Erase Suspend/Resume

? Program Suspend/Resume

? Unlock Bypass Program/Erase

? Hardware Reset (RESET)

? Deep Power Down Mode

? Data Polling and Toggle Bits

- Provides a software method of detecting the status of program or erase completion

? Endurance

- 100K Program/Erase Cycles Minimum

? Extended Temperature : -25°C ~ 85°C

? Support Common Flash Memory Interface

? Output Driver Control by Configuration Register

? Low Vcc Write Inhibit

? Package : TBD

產(chǎn)品屬性

  • 型號:

    K8A56ETC

  • 制造商:

    SAMSUNG

  • 制造商全稱:

    Samsung semiconductor

  • 功能描述:

    256Mb C-die NOR FLASH

供應商 型號 品牌 批號 封裝 庫存 備注 價格
-
23+
NA
13000
原廠授權一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種
詢價
SAMSANG
19+
BGA
256800
原廠代理渠道,每一顆芯片都可追溯原廠;
詢價
TOSHIBA
23+
TO-220F
8000
只做原裝現(xiàn)貨
詢價
TOSHIBA/東芝
23+
TO-220F
50000
全新原裝正品現(xiàn)貨,支持訂貨
詢價
TOSHIBA/東芝
24+
NA/
128
優(yōu)勢代理渠道,原裝正品,可全系列訂貨開增值稅票
詢價
TOSHIBA/東芝
21+
TO-220F
10000
原裝現(xiàn)貨假一罰十
詢價
TOSHIBA/東芝
TO-220F
22+
6000
十年配單,只做原裝
詢價
TOSHIBA
24+
TO220F
65200
一級代理/放心采購
詢價
TOSHIBA/東芝
2022+
2500
全新原裝 貨期兩周
詢價
TOSHIBA/東芝
22+
TO-220F
25000
只做原裝進口現(xiàn)貨,專注配單
詢價