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K6R1016V1D

64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges.

GENERALDESCRIPTION TheK6R1016V1Disa1,048,576-bithigh-speedStaticRandomAccessMemoryorganizedas65,536wordsby16bits.TheK6R1016V1Duses16commoninputandoutputlinesandhasatoutputenablepinwhichoperatesfasterthanaddressaccesstimeatreadcycle.Alsoitallowsthatlo

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K6R1016V1D-EC08

256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating).

GENERALDESCRIPTION TheK6R1004C1Disa1,048,576-bithigh-speedStaticRandomAccessMemoryorganizedas262,144wordsby4bits.TheK6R1004C1Duses4commoninputandoutputlinesandhasanoutputenablepinwhichoperatesfasterthanaddressaccesstimeatreadcycle.Thedeviceisfabricate

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K6R1016V1D-EC08

64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges.

GENERALDESCRIPTION TheK6R1004V1Disa1,048,576-bithigh-speedStaticRandomAccessMemoryorganizedas262,144wordsby4bits.TheK6R1004V1Duses4commoninputandoutputlinesandhasanoutputenablepinwhichoperatesfasterthanaddressaccesstimeatreadcycle.Thedeviceisfabricate

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K6R1016V1D-EC08/10

64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges.

GENERALDESCRIPTION TheK6R1004V1Disa1,048,576-bithigh-speedStaticRandomAccessMemoryorganizedas262,144wordsby4bits.TheK6R1004V1Duses4commoninputandoutputlinesandhasanoutputenablepinwhichoperatesfasterthanaddressaccesstimeatreadcycle.Thedeviceisfabricate

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K6R1016V1D-EC08SLASH10

64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges.

GENERALDESCRIPTION TheK6R1004V1Disa1,048,576-bithigh-speedStaticRandomAccessMemoryorganizedas262,144wordsby4bits.TheK6R1004V1Duses4commoninputandoutputlinesandhasanoutputenablepinwhichoperatesfasterthanaddressaccesstimeatreadcycle.Thedeviceisfabricate

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K6R1016V1D-EC10

256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating).

GENERALDESCRIPTION TheK6R1004C1Disa1,048,576-bithigh-speedStaticRandomAccessMemoryorganizedas262,144wordsby4bits.TheK6R1004C1Duses4commoninputandoutputlinesandhasanoutputenablepinwhichoperatesfasterthanaddressaccesstimeatreadcycle.Thedeviceisfabricate

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K6R1016V1D-EC10

64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges.

GENERALDESCRIPTION TheK6R1004V1Disa1,048,576-bithigh-speedStaticRandomAccessMemoryorganizedas262,144wordsby4bits.TheK6R1004V1Duses4commoninputandoutputlinesandhasanoutputenablepinwhichoperatesfasterthanaddressaccesstimeatreadcycle.Thedeviceisfabricate

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K6R1016V1D-EI08

64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges.

GENERALDESCRIPTION TheK6R1004V1Disa1,048,576-bithigh-speedStaticRandomAccessMemoryorganizedas262,144wordsby4bits.TheK6R1004V1Duses4commoninputandoutputlinesandhasanoutputenablepinwhichoperatesfasterthanaddressaccesstimeatreadcycle.Thedeviceisfabricate

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K6R1016V1D-EI08

256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating).

GENERALDESCRIPTION TheK6R1004C1Disa1,048,576-bithigh-speedStaticRandomAccessMemoryorganizedas262,144wordsby4bits.TheK6R1004C1Duses4commoninputandoutputlinesandhasanoutputenablepinwhichoperatesfasterthanaddressaccesstimeatreadcycle.Thedeviceisfabricate

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K6R1016V1D-EI08/10

64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges.

GENERALDESCRIPTION TheK6R1004V1Disa1,048,576-bithigh-speedStaticRandomAccessMemoryorganizedas262,144wordsby4bits.TheK6R1004V1Duses4commoninputandoutputlinesandhasanoutputenablepinwhichoperatesfasterthanaddressaccesstimeatreadcycle.Thedeviceisfabricate

SamsungSamsung semiconductor

三星三星半導(dǎo)體

詳細(xì)參數(shù)

  • 型號：

    K6R1016V1D

  • 制造商：

    SAMSUNG

  • 制造商全稱：

    Samsung semiconductor

  • 功能描述：

    64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges.

供應(yīng)商型號品牌批號封裝庫存備注價格
6000
面議
19
DIP/SMD
 詢價
SAMSUNG
15+
SSOP
11560
全新原裝,現(xiàn)貨庫存,長期供應(yīng)
 詢價
SAM
24+/25+
12
原裝正品現(xiàn)貨庫存價優(yōu)
 詢價
SAMSUNG
16+
QFP
2500
進(jìn)口原裝現(xiàn)貨/價格優(yōu)勢!
 詢價
SAM
06+
TSOP
1000
全新原裝 絕對有貨
 詢價
SAMSUNG
TSOP
320
正品原裝--自家現(xiàn)貨-實(shí)單可談
 詢價
SAMSUNG
2020+
BGA
800
百分百原裝正品 真實(shí)公司現(xiàn)貨庫存 本公司只做原裝 可
 詢價
SAMSUNG
23+
TSOP
9562
詢價
SAMSUNG
16+
TSOP
8800
進(jìn)口原裝大量現(xiàn)貨熱賣中
 詢價
SAMSUNG
24+
TSOP
6980
原裝現(xiàn)貨,可開13%稅票
 詢價
更多K6R1016V1D供應(yīng)商 更新時間2025-4-27 14:01:00

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