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K4T51163QC-ZCD5

512Mb C-die DDR2 SDRAM

The512MbDDR2SDRAMisorganizedasa32Mbitx4I/Osx4banks,16Mbitx8I/Osx4banksor8Mbitx16I/Osx4banksdevice.Thissynchronousdeviceachieveshighspeeddoubledata-ratetransferratesofupto800Mb/sec/pin(DDR2-800)forgeneralapplications. Thechipisdesignedtocomplywi

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K4T51163QC-ZCD6

512Mb C-die DDR2 SDRAM

The512MbDDR2SDRAMisorganizedasa32Mbitx4I/Osx4banks,16Mbitx8I/Osx4banksor8Mbitx16I/Osx4banksdevice.Thissynchronousdeviceachieveshighspeeddoubledata-ratetransferratesofupto800Mb/sec/pin(DDR2-800)forgeneralapplications. Thechipisdesignedtocomplywi

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K4T51163QB

512MbB-dieDDR2SDRAM

DDR2SDRAM The512MbDDR2SDRAMisorganizedasa32Mbitx4I/Osx4banks,16Mbitx8I/Osx4banksor8Mbitx16I/Osx4banksdevice.Thissynchronousdeviceachieveshighspeeddouble data-ratetransferratesofupto533Mb/sec/pin(DDR2-533)for generalapplications. Thechip

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K4T51163QB-GCCC

512MbB-dieDDR2SDRAM

DDR2SDRAM The512MbDDR2SDRAMisorganizedasa32Mbitx4I/Osx4banks,16Mbitx8I/Osx4banksor8Mbitx16I/Osx4banksdevice.Thissynchronousdeviceachieveshighspeeddouble data-ratetransferratesofupto533Mb/sec/pin(DDR2-533)for generalapplications. Thechip

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K4T51163QB-ZCCC

512MbB-dieDDR2SDRAM

DDR2SDRAM The512MbDDR2SDRAMisorganizedasa32Mbitx4I/Osx4banks,16Mbitx8I/Osx4banksor8Mbitx16I/Osx4banksdevice.Thissynchronousdeviceachieveshighspeeddouble data-ratetransferratesofupto533Mb/sec/pin(DDR2-533)for generalapplications. Thechip

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K4T51163QC-ZCCC

512MbC-dieDDR2SDRAM

The512MbDDR2SDRAMisorganizedasa32Mbitx4I/Osx4banks,16Mbitx8I/Osx4banksor8Mbitx16I/Osx4banksdevice.Thissynchronousdeviceachieveshighspeeddoubledata-ratetransferratesofupto800Mb/sec/pin(DDR2-800)forgeneralapplications. Thechipisdesignedtocomplywi

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K4T51163QC-ZCLCC

512MbC-dieDDR2SDRAM

The512MbDDR2SDRAMisorganizedasa32Mbitx4I/Osx4banks,16Mbitx8I/Osx4banksor8Mbitx16I/Osx4banksdevice.Thissynchronousdeviceachieveshighspeeddoubledata-ratetransferratesofupto800Mb/sec/pin(DDR2-800)forgeneralapplications. Thechipisdesignedtocomplywi

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K4T51163QC-ZLCC

512MbC-dieDDR2SDRAM

The512MbDDR2SDRAMisorganizedasa32Mbitx4I/Osx4banks,16Mbitx8I/Osx4banksor8Mbitx16I/Osx4banksdevice.Thissynchronousdeviceachieveshighspeeddoubledata-ratetransferratesofupto800Mb/sec/pin(DDR2-800)forgeneralapplications. Thechipisdesignedtocomplywi

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K4T51163QE

512MbE-dieDDR2SDRAMSpecification

The512MbDDR2SDRAMisorganizedasa32Mbitx4I/Osx4banks,16Mbitx8I/Osx4banksor8Mbitx16I/Osx4banksdevice.Thissynchronousdeviceachieveshighspeeddoubledata-ratetransferratesofupto800Mb/sec/pin(DDR2-800)forgeneralapplications. Thechipisdesignedtocomply

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K4T51163QG

512MbG-dieDDR2SDRAMSpecification

The512MbDDR2SDRAMisorganizedasa32Mbitx4I/Osx4banksor16Mbitx8I/Osx4banksor8Mbitx16I/Osx4banksdevice.Thissynchronousdeviceachieveshighspeeddoubledata-ratetransferratesofupto800Mb/sec/pin(DDR2-800)forgeneralapplications. KeyFeatures ?JEDECstan

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K4T51163QG

ConsumerMemory

SDRAMProductGuide MemoryDivision November2007

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K4T51163QG-HCLCC

512MbG-dieDDR2SDRAMSpecification

The512MbDDR2SDRAMisorganizedasa32Mbitx4I/Osx4banksor16Mbitx8I/Osx4banksor8Mbitx16I/Osx4banksdevice.Thissynchronousdeviceachieveshighspeeddoubledata-ratetransferratesofupto800Mb/sec/pin(DDR2-800)forgeneralapplications. KeyFeatures ?JEDECstan

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K4T51163QI

ConsumerMemory

SDRAMProductGuide MemoryDivision November2007

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K4T51163QQ-BC

PRODUCTSELECTIONGUIDEDisplays,MemoryandStorage

Samsungcontinuestoleadtheindustrywiththebroadestportfolioofmemoryproductsand displaytechnology.Itsdisplaypanels,DRAM,flash,mobileandgraphicsmemoryarefoundinmany computers–fromultrabookstopowerfulservers–andinawiderangeofhandhelddevicessuch assmartphon

SamsungSamsung semiconductor

三星三星半導(dǎo)體

詳細(xì)參數(shù)

  • 型號(hào)：

    K4T51163QC-ZCD

  • 制造商：

    SAMSUNG

  • 制造商全稱(chēng)：

    Samsung semiconductor

  • 功能描述：

    512Mb C-die DDR2 SDRAM

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
SAM
2018+
BGA
6528
科恒偉業(yè)!承若只做進(jìn)口原裝正品假一賠十!1581728776
 詢(xún)價(jià)
SAM
BGA
6000
原裝現(xiàn)貨,長(zhǎng)期供應(yīng),終端可賬期
 詢(xún)價(jià)
SAMSUNG
24+
BGA
718
詢(xún)價(jià)
SAMSUNG
23+
BGA
8890
價(jià)格優(yōu)勢(shì)/原裝現(xiàn)貨/客戶(hù)至上/歡迎廣大客戶(hù)來(lái)電查詢(xún)
 詢(xún)價(jià)
SAMSUNG
06+
BGA
69
詢(xún)價(jià)
SAMSUNG
06+
BGA
716
原裝現(xiàn)貨海量庫(kù)存歡迎咨詢(xún)
 詢(xún)價(jià)
SAMSUNG
22+
BGA
2140
全新原裝!現(xiàn)貨特價(jià)供應(yīng)
 詢(xún)價(jià)
SAM
6000
面議
19
BGA
 詢(xún)價(jià)
LTNEAR
20+
BGA
3000
主營(yíng)XILINX ALTERA真實(shí)庫(kù)存
 詢(xún)價(jià)
SAMSUNG
1923+
BGA
9865
原裝進(jìn)口現(xiàn)貨庫(kù)存專(zhuān)業(yè)工廠研究所配單供貨
 詢(xún)價(jià)
更多K4T51163QC-ZCD供應(yīng)商 更新時(shí)間2024-11-19 19:28:00

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