| 零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
|---|---|---|---|---|
K4T51043Q | 512Mb B-die DDR2 SDRAM DDR2SDRAM The512MbDDR2SDRAMisorganizedasa32Mbitx4I/Osx4banks,16Mbitx8I/Osx4banksor8Mbitx16I/Osx4banksdevice.Thissynchronousdeviceachieveshighspeeddouble data-ratetransferratesofupto533Mb/sec/pin(DDR2-533)for generalapplications. Thechip | SamsungSamsung semiconductor 三星三星半導(dǎo)體 | Samsung | |
512Mb B-die DDR2 SDRAM DDR2SDRAM The512MbDDR2SDRAMisorganizedasa32Mbitx4I/Osx4banks,16Mbitx8I/Osx4banksor8Mbitx16I/Osx4banksdevice.Thissynchronousdeviceachieveshighspeeddouble data-ratetransferratesofupto533Mb/sec/pin(DDR2-533)for generalapplications. Thechip | SamsungSamsung semiconductor 三星三星半導(dǎo)體 | Samsung | ||
512Mb B-die DDR2 SDRAM DDR2SDRAM The512MbDDR2SDRAMisorganizedasa32Mbitx4I/Osx4banks,16Mbitx8I/Osx4banksor8Mbitx16I/Osx4banksdevice.Thissynchronousdeviceachieveshighspeeddouble data-ratetransferratesofupto533Mb/sec/pin(DDR2-533)for generalapplications. Thechip | SamsungSamsung semiconductor 三星三星半導(dǎo)體 | Samsung | ||
512Mb B-die DDR2 SDRAM DDR2SDRAM The512MbDDR2SDRAMisorganizedasa32Mbitx4I/Osx4banks,16Mbitx8I/Osx4banksor8Mbitx16I/Osx4banksdevice.Thissynchronousdeviceachieveshighspeeddouble data-ratetransferratesofupto533Mb/sec/pin(DDR2-533)for generalapplications. Thechip | SamsungSamsung semiconductor 三星三星半導(dǎo)體 | Samsung | ||
512Mb B-die DDR2 SDRAM DDR2SDRAM The512MbDDR2SDRAMisorganizedasa32Mbitx4I/Osx4banks,16Mbitx8I/Osx4banksor8Mbitx16I/Osx4banksdevice.Thissynchronousdeviceachieveshighspeeddouble data-ratetransferratesofupto533Mb/sec/pin(DDR2-533)for generalapplications. Thechip | SamsungSamsung semiconductor 三星三星半導(dǎo)體 | Samsung | ||
512Mb C-die DDR2 SDRAM The512MbDDR2SDRAMisorganizedasa32Mbitx4I/Osx4banks,16Mbitx8I/Osx4banksor8Mbitx16I/Osx4banksdevice.Thissynchronousdeviceachieveshighspeeddoubledata-ratetransferratesofupto800Mb/sec/pin(DDR2-800)forgeneralapplications. Thechipisdesignedtocomplywi | SamsungSamsung semiconductor 三星三星半導(dǎo)體 | Samsung | ||
512Mb C-die DDR2 SDRAM The512MbDDR2SDRAMisorganizedasa32Mbitx4I/Osx4banks,16Mbitx8I/Osx4banksor8Mbitx16I/Osx4banksdevice.Thissynchronousdeviceachieveshighspeeddoubledata-ratetransferratesofupto800Mb/sec/pin(DDR2-800)forgeneralapplications. Thechipisdesignedtocomplywi | SamsungSamsung semiconductor 三星三星半導(dǎo)體 | Samsung | ||
512Mb C-die DDR2 SDRAM The512MbDDR2SDRAMisorganizedasa32Mbitx4I/Osx4banks,16Mbitx8I/Osx4banksor8Mbitx16I/Osx4banksdevice.Thissynchronousdeviceachieveshighspeeddoubledata-ratetransferratesofupto800Mb/sec/pin(DDR2-800)forgeneralapplications. Thechipisdesignedtocomplywi | SamsungSamsung semiconductor 三星三星半導(dǎo)體 | Samsung | ||
512Mb C-die DDR2 SDRAM The512MbDDR2SDRAMisorganizedasa32Mbitx4I/Osx4banks,16Mbitx8I/Osx4banksor8Mbitx16I/Osx4banksdevice.Thissynchronousdeviceachieveshighspeeddoubledata-ratetransferratesofupto800Mb/sec/pin(DDR2-800)forgeneralapplications. Thechipisdesignedtocomplywi | SamsungSamsung semiconductor 三星三星半導(dǎo)體 | Samsung | ||
512Mb C-die DDR2 SDRAM The512MbDDR2SDRAMisorganizedasa32Mbitx4I/Osx4banks,16Mbitx8I/Osx4banksor8Mbitx16I/Osx4banksdevice.Thissynchronousdeviceachieveshighspeeddoubledata-ratetransferratesofupto800Mb/sec/pin(DDR2-800)forgeneralapplications. Thechipisdesignedtocomplywi | SamsungSamsung semiconductor 三星三星半導(dǎo)體 | Samsung | ||
512Mb C-die DDR2 SDRAM The512MbDDR2SDRAMisorganizedasa32Mbitx4I/Osx4banks,16Mbitx8I/Osx4banksor8Mbitx16I/Osx4banksdevice.Thissynchronousdeviceachieveshighspeeddoubledata-ratetransferratesofupto800Mb/sec/pin(DDR2-800)forgeneralapplications. Thechipisdesignedtocomplywi | SamsungSamsung semiconductor 三星三星半導(dǎo)體 | Samsung | ||
512Mb C-die DDR2 SDRAM The512MbDDR2SDRAMisorganizedasa32Mbitx4I/Osx4banks,16Mbitx8I/Osx4banksor8Mbitx16I/Osx4banksdevice.Thissynchronousdeviceachieveshighspeeddoubledata-ratetransferratesofupto800Mb/sec/pin(DDR2-800)forgeneralapplications. Thechipisdesignedtocomplywi | SamsungSamsung semiconductor 三星三星半導(dǎo)體 | Samsung | ||
512Mb C-die DDR2 SDRAM The512MbDDR2SDRAMisorganizedasa32Mbitx4I/Osx4banks,16Mbitx8I/Osx4banksor8Mbitx16I/Osx4banksdevice.Thissynchronousdeviceachieveshighspeeddoubledata-ratetransferratesofupto800Mb/sec/pin(DDR2-800)forgeneralapplications. Thechipisdesignedtocomplywi | SamsungSamsung semiconductor 三星三星半導(dǎo)體 | Samsung | ||
512Mb C-die DDR2 SDRAM The512MbDDR2SDRAMisorganizedasa32Mbitx4I/Osx4banks,16Mbitx8I/Osx4banksor8Mbitx16I/Osx4banksdevice.Thissynchronousdeviceachieveshighspeeddoubledata-ratetransferratesofupto800Mb/sec/pin(DDR2-800)forgeneralapplications. Thechipisdesignedtocomplywi | SamsungSamsung semiconductor 三星三星半導(dǎo)體 | Samsung | ||
512Mb C-die DDR2 SDRAM The512MbDDR2SDRAMisorganizedasa32Mbitx4I/Osx4banks,16Mbitx8I/Osx4banksor8Mbitx16I/Osx4banksdevice.Thissynchronousdeviceachieveshighspeeddoubledata-ratetransferratesofupto800Mb/sec/pin(DDR2-800)forgeneralapplications. Thechipisdesignedtocomplywi | SamsungSamsung semiconductor 三星三星半導(dǎo)體 | Samsung | ||
512Mb C-die DDR2 SDRAM The512MbDDR2SDRAMisorganizedasa32Mbitx4I/Osx4banks,16Mbitx8I/Osx4banksor8Mbitx16I/Osx4banksdevice.Thissynchronousdeviceachieveshighspeeddoubledata-ratetransferratesofupto800Mb/sec/pin(DDR2-800)forgeneralapplications. Thechipisdesignedtocomplywi | SamsungSamsung semiconductor 三星三星半導(dǎo)體 | Samsung | ||
512Mb C-die DDR2 SDRAM The512MbDDR2SDRAMisorganizedasa32Mbitx4I/Osx4banks,16Mbitx8I/Osx4banksor8Mbitx16I/Osx4banksdevice.Thissynchronousdeviceachieveshighspeeddoubledata-ratetransferratesofupto800Mb/sec/pin(DDR2-800)forgeneralapplications. Thechipisdesignedtocomplywi | SamsungSamsung semiconductor 三星三星半導(dǎo)體 | Samsung | ||
512Mb C-die DDR2 SDRAM The512MbDDR2SDRAMisorganizedasa32Mbitx4I/Osx4banks,16Mbitx8I/Osx4banksor8Mbitx16I/Osx4banksdevice.Thissynchronousdeviceachieveshighspeeddoubledata-ratetransferratesofupto800Mb/sec/pin(DDR2-800)forgeneralapplications. Thechipisdesignedtocomplywi | SamsungSamsung semiconductor 三星三星半導(dǎo)體 | Samsung | ||
512Mb E-die DDR2 SDRAM Specification The512MbDDR2SDRAMisorganizedasa32Mbitx4I/Osx4banks,16Mbitx8I/Osx4banksor8Mbitx16I/Osx4banksdevice.Thissynchronousdeviceachieveshighspeeddoubledata-ratetransferratesofupto800Mb/sec/pin(DDR2-800)forgeneralapplications. Thechipisdesignedtocomply | SamsungSamsung semiconductor 三星三星半導(dǎo)體 | Samsung | ||
512Mb G-die DDR2 SDRAM Specification The512MbDDR2SDRAMisorganizedasa32Mbitx4I/Osx4banksor16Mbitx8I/Osx4banksor8Mbitx16I/Osx4banksdevice.Thissynchronousdeviceachieveshighspeeddoubledata-ratetransferratesofupto800Mb/sec/pin(DDR2-800)forgeneralapplications. KeyFeatures ?JEDECstan | SamsungSamsung semiconductor 三星三星半導(dǎo)體 | Samsung |
詳細參數(shù)
- 型號：
K4T51043Q
- 制造商：
SAMSUNG
- 制造商全稱：
Samsung semiconductor
- 功能描述：
512Mb B-die DDR2 SDRAM
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
SAMSUNG |
0710+ |
BGA |
1200 |
全新原裝進口自己庫存優(yōu)勢 |
詢價 | ||
SEC |
09+ |
BGA |
5500 |
原裝無鉛,優(yōu)勢熱賣 |
詢價 | ||
SEC |
06+ |
BGA |
1000 |
全新原裝 絕對有貨 |
詢價 | ||
SAMSUNG |
23+ |
FBGA |
8890 |
價格優(yōu)勢/原裝現(xiàn)貨/客戶至上/歡迎廣大客戶來電查詢 |
詢價 | ||
SAMSUNG |
23+ |
BGA |
5000 |
原裝正品,假一罰十 |
詢價 | ||
SAMSUNG |
16+ |
BGA |
4000 |
進口原裝現(xiàn)貨/價格優(yōu)勢! |
詢價 | ||
SAMSUNG |
2016+ |
FBGA60 |
9000 |
只做原裝,假一罰十,公司可開17%增值稅發(fā)票! |
詢價 | ||
SAMSUNG |
2020+ |
BGA |
5600 |
百分百原裝正品 真實公司現(xiàn)貨庫存 本公司只做原裝 可 |
詢價 | ||
SAMSUNG |
2021+ |
FBGA60 |
6063 |
百分百原裝正品 |
詢價 | ||
SAMSUNG |
17+ |
BGA |
9988 |
只做原裝進口,自己庫存 |
詢價 |
相關(guān)規(guī)格書
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- K4T51083QQ-BCE6000
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相關(guān)庫存
更多- K4T51083QC-ZCD5000
- K4T51083QQ-BCE7000
- K4T51163QQ-BCE6T00
- K4TD
- K500B1/4
- K-500-L01
- K50-3C0SE16.0000MR
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- K50-3C1SE27.0000M
- K50-HC0CSE1.8432MR
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- K50-HC0CSE24.5760MR
- K50-HC0CSE27.0000MR
- K50-HC0CSE3.6864MR
- K50-HC0CSE49.1520MR
- K50-HC0CSE8.0000MR
- K50LGRYPQ
- K52414-0001
- K560J15C0GF5TL2
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- K56400GRY
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- K-5724
- K5AB441MPF-44
- K5AB442BTF-44
- K5SMDF.IT
- K5V1BU43T
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- K5V2CL43T
- K60
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- K-61000
- K61A781
- K61B841
- K61X-E15S-NJ
- K6-22Z-80
- K6250150-30
- K6400
- K64C841
- K66-E15S-N
- K66X-A26S-N
- K66X-B44P-N
