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K4T1G164QQ-HCE6中文資料三星數(shù)據(jù)手冊PDF規(guī)格書
K4T1G164QQ-HCE6規(guī)格書詳情
The 1Gb DDR2 SDRAM is organized as a 32Mbit x 4 I/Os x 8banks, 16Mbit x 8 I/Os x 8banks or 8Mbit x 16 I/Os x 8 banks device. This synchronous device achieves high speed double data-rate transfer rates of up to 800Mb/sec/pin (DDR2-800) for general applications.
Key Features
? JEDEC standard 1.8V ± 0.1V Power Supply
? VDDQ = 1.8V ± 0.1V
? 333MHz fCK for 667Mb/sec/pin, 400MHz fCK for 800Mb/sec/pin
? 8 Banks
? Posted CAS
? Programmable CAS Latency: 3, 4, 5, 6
? Programmable Additive Latency: 0, 1, 2, 3, 4, 5
? Write Latency(WL) = Read Latency(RL) -1
? Burst Length: 4 , 8(Interleave/nibble sequential)
? Programmable Sequential / Interleave Burst Mode
? Bi-directional Differential Data-Strobe (Single-ended data strobe is an optional feature)
? Off-Chip Driver(OCD) Impedance Adjustment
? On Die Termination
? Special Function Support
- PASR(Partial Array Self Refresh)
- 50ohm ODT
- High Temperature Self-Refresh rate enable
? Average Refresh Period 7.8us at lower than TCASE 85°C, 3.9us at 85°C < TCASE < 95 °C
? All of Lead-free products are compliant for RoHS
產(chǎn)品屬性
- 型號：
K4T1G164QQ-HCE6
- 制造商：
Samsung SDI
- 功能描述：
DRAM Chip DDR2 SDRAM 1G-Bit 64Mx16 1.8V 84-Pin FBGA Tray
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
SANSUNG |
1004+ |
BGA |
40 |
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
詢價 | ||
SAMSUNG/三星 |
23+ |
NA/ |
15 |
優(yōu)勢代理渠道,原裝正品,可全系列訂貨開增值稅票 |
詢價 | ||
SAMSUNG |
23+ |
BGA |
3500 |
全新原裝假一賠十 |
詢價 | ||
SAMSUNG |
2020+ |
BGA |
8000 |
只做自己庫存,全新原裝進口正品假一賠百,可開13%增 |
詢價 | ||
SAMSUNG |
存儲器 |
FBGA-84 |
40352 |
SAMSUNG原裝存儲芯片-誠信為本 |
詢價 | ||
SAMSUNG |
23+ |
BGA |
20000 |
原廠原裝正品現(xiàn)貨 |
詢價 | ||
SAMSUNG/三星 |
21+ |
BGA |
10000 |
全新原裝 公司現(xiàn)貨 價優(yōu) |
詢價 | ||
SAMSUNG |
1040 |
178 |
公司優(yōu)勢庫存 熱賣中! |
詢價 | |||
SAMSUNG原裝 |
ROHS全新原裝公司 |
原廠原包原封△ |
10289 |
原裝現(xiàn)貨在線咨詢樣品※技術(shù)支持專業(yè)電子元器件授權(quán) |
詢價 | ||
SAMSUN |
23+ |
BGA84 |
3000 |
原裝正品假一罰百!可開增票! |
詢價 |
