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K4S561632B

256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL

TheK4S561632Bis268,435,456bitssynchronoushighdatarate DynamicRAMorganizedas4x4,196,304wordsby16bits,fabricatedwithSAMSUNGshighperformanceCMOStechnology.SynchronousdesignallowsprecisecyclecontrolwiththeuseofsystemclockI/Otransactionsarepossibleoneveryclo

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K4S561632B-TC/L1H

256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL

TheK4S561632Bis268,435,456bitssynchronoushighdatarate DynamicRAMorganizedas4x4,196,304wordsby16bits,fabricatedwithSAMSUNGshighperformanceCMOStechnology.SynchronousdesignallowsprecisecyclecontrolwiththeuseofsystemclockI/Otransactionsarepossibleoneveryclo

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K4S561632B-TC/L1L

256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL

TheK4S561632Bis268,435,456bitssynchronoushighdatarate DynamicRAMorganizedas4x4,196,304wordsby16bits,fabricatedwithSAMSUNGshighperformanceCMOStechnology.SynchronousdesignallowsprecisecyclecontrolwiththeuseofsystemclockI/Otransactionsarepossibleoneveryclo

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K4S561632B-TC/L75

256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL

TheK4S561632Bis268,435,456bitssynchronoushighdatarate DynamicRAMorganizedas4x4,196,304wordsby16bits,fabricatedwithSAMSUNGshighperformanceCMOStechnology.SynchronousdesignallowsprecisecyclecontrolwiththeuseofsystemclockI/Otransactionsarepossibleoneveryclo

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K4S561632C

256MbitSDRAM4Mx16bitx4BanksSynchronousDRAM

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K4S561632C-TC

256MbitSDRAM4Mx16bitx4BanksSynchronousDRAM

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K4S561632D

256MbitSDRAM4Mx16bitx4BanksSynchronousDRAMLVTTL

GENERALDESCRIPTION TheK4S561632Dis268,435,456bitssynchronoushighdatarateDynamicRAMorganizedas4x4,196,304wordsby16bits,fabricatedwithSAMSUNGshighperformanceCMOStechnology.SynchronousdesignallowsprecisecyclecontrolwiththeuseofsystemclockI/Otransactionsarep

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K4S561632E

256MbE-dieSDRAMSpecification

GENERALDESCRIPTION TheK4S560432E/K4S560832E/K4S561632Eis268,435,456bitssynchronoushighdatarateDynamicRAMorganizedas4x16,777,216wordsby4bits/4x8,388,608wordsby8bits/4x4,194,304wordsby16bits,fabricatedwithSAMSUNGshighperformanceCMOStechnology.Synchronou

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K4S561632E

256MbE-dieSDRAMSpecification54pinsTSOP-II

GENERALDESCRIPTION TheK4S560432E/K4S560832Eis268,435,456bitssynchronoushighdatarateDynamicRAMorganizedas4x16,777,216wordsby4bits/4x8,388,608wordsby8bits,fabricatedwithSAMSUNGshighperformanceCMOStechnology.Synchronousdesignallowsprecisecyclecontrolwiththe

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K4S561632H

SDRAMProductGuide

SamsungSamsung semiconductor

三星三星半導(dǎo)體

詳細(xì)參數(shù)

  • 型號(hào):

    K4S561632B

  • 制造商:

    SAMSUNG

  • 制造商全稱:

    Samsung semiconductor

  • 功能描述:

    256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
SAMSUN
2022
TSOP-54
3080
原裝正品
詢價(jià)
SAMSUNG
24+
TSSOP
24
詢價(jià)
N/A
23+
TSOP54
1228
專業(yè)優(yōu)勢(shì)供應(yīng)
詢價(jià)
TSOP54
0934+
SAM
109
全新原裝現(xiàn)貨
詢價(jià)
SAMSUNG
TSOP
9856
只做原裝貨值得信賴
詢價(jià)
TSOP54
2020+
SAM
350000
100%進(jìn)口原裝正品公司現(xiàn)貨庫(kù)存
詢價(jià)
SAMSANG
19+
TSOP
256800
原廠代理渠道,每一顆芯片都可追溯原廠;
詢價(jià)
SAMSUNG
22+23+
TSSOP
37099
絕對(duì)原裝正品全新進(jìn)口深圳現(xiàn)貨
詢價(jià)
SAMSUNG
1815+
TSOP
6528
只做原裝正品假一賠十為客戶做到零風(fēng)險(xiǎn)!!
詢價(jià)
SAMSUNG/三星
0934+
TSOP
15498
只做原廠原裝,認(rèn)準(zhǔn)寶芯創(chuàng)配單專家
詢價(jià)
更多K4S561632B供應(yīng)商 更新時(shí)間2025-1-31 14:30:00