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K4S160822D

2Mx8 SDRAM 1M x 8bit x 2 Banks Synchronous DRAM LVTTL

GENERALDESCRIPTION TheK4S160822Dis16,777,216bitssynchronoushighdatarateDynamicRAMorganizedas2x1,048,576wordsby8bits,fabricatedwithSAMSUNG￠shighperformanceCMOStechnology.SynchronousdesignallowsprecisecyclecontrolwiththeuseofsystemclockI/Otransactionsarepo

SamsungSamsung semiconductor

三星三星半導體

K4S160822DT-G/F10

2Mx8 SDRAM 1M x 8bit x 2 Banks Synchronous DRAM LVTTL

GENERALDESCRIPTION TheK4S160822Dis16,777,216bitssynchronoushighdatarateDynamicRAMorganizedas2x1,048,576wordsby8bits,fabricatedwithSAMSUNG￠shighperformanceCMOStechnology.SynchronousdesignallowsprecisecyclecontrolwiththeuseofsystemclockI/Otransactionsarepo

SamsungSamsung semiconductor

三星三星半導體

K4S160822DT-G/F7

2Mx8 SDRAM 1M x 8bit x 2 Banks Synchronous DRAM LVTTL

GENERALDESCRIPTION TheK4S160822Dis16,777,216bitssynchronoushighdatarateDynamicRAMorganizedas2x1,048,576wordsby8bits,fabricatedwithSAMSUNG￠shighperformanceCMOStechnology.SynchronousdesignallowsprecisecyclecontrolwiththeuseofsystemclockI/Otransactionsarepo

SamsungSamsung semiconductor

三星三星半導體

K4S160822DT-G/F8

2Mx8 SDRAM 1M x 8bit x 2 Banks Synchronous DRAM LVTTL

GENERALDESCRIPTION TheK4S160822Dis16,777,216bitssynchronoushighdatarateDynamicRAMorganizedas2x1,048,576wordsby8bits,fabricatedwithSAMSUNG￠shighperformanceCMOStechnology.SynchronousdesignallowsprecisecyclecontrolwiththeuseofsystemclockI/Otransactionsarepo

SamsungSamsung semiconductor

三星三星半導體

K4S160822DT-G/FH

2Mx8 SDRAM 1M x 8bit x 2 Banks Synchronous DRAM LVTTL

GENERALDESCRIPTION TheK4S160822Dis16,777,216bitssynchronoushighdatarateDynamicRAMorganizedas2x1,048,576wordsby8bits,fabricatedwithSAMSUNG￠shighperformanceCMOStechnology.SynchronousdesignallowsprecisecyclecontrolwiththeuseofsystemclockI/Otransactionsarepo

SamsungSamsung semiconductor

三星三星半導體

K4S160822DT-G/FL

2Mx8 SDRAM 1M x 8bit x 2 Banks Synchronous DRAM LVTTL

GENERALDESCRIPTION TheK4S160822Dis16,777,216bitssynchronoushighdatarateDynamicRAMorganizedas2x1,048,576wordsby8bits,fabricatedwithSAMSUNG￠shighperformanceCMOStechnology.SynchronousdesignallowsprecisecyclecontrolwiththeuseofsystemclockI/Otransactionsarepo

SamsungSamsung semiconductor

三星三星半導體

詳細參數(shù)

  • 型號：

    K4S160822D

  • 制造商：

    SAMSUNG

  • 制造商全稱：

    Samsung semiconductor

  • 功能描述：

    2Mx8 SDRAM 1M x 8bit x 2 Banks Synchronous DRAM LVTTL

供應商型號品牌批號封裝庫存備注價格
SAMSUNG
2022
TSOP
5280
原廠原裝正品,價格超越代理
 詢價
SAMSUNG
23+
TSOP
6200
特價庫存
 詢價
SAMSUNG
6000
面議
19
TSOP
 詢價
SAMSUNG/三星
19+
TSOP
32000
原裝正品,現(xiàn)貨特價
 詢價
SAMSUNG
2023+
TSOP
80000
一級代理/分銷渠道價格優(yōu)勢 十年芯程一路只做原裝正品
 詢價
SAMSUNG
21+
TSOP
35200
一級代理/放心采購
 詢價
SAMSUNG/三星
23+
TSOP
5000
一級代理原廠VIP渠道,專注軍工、汽車、醫(yī)療、工業(yè)、
 詢價
SAMSUNG/三星
22+
TSOP
12032
現(xiàn)貨,原廠原裝假一罰十!
 詢價
SAMSUNG
2023+
SMD
1381
安羅世紀電子只做原裝正品貨
 詢價
三星
24+
TSSOP
5000
只做原裝公司現(xiàn)貨
 詢價
更多K4S160822D供應商 更新時間2024-11-19 16:18:00

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