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K4E660812E

8M x 8bit CMOS Dynamic RAM with Extended Data Out

DESCRIPTION Thisisafamilyof8,388,608x8bitExtendedDataOutModeCMOSDRAMs.ExtendedDataOutModeoffershighspeedrandomaccessofmemorycellswithinthesamerow.Refreshcycle(4KRef.or8KRef.),accesstime(-45,-50or-60),powerconsumption(NormalorLowpower)areoptionalfe

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K4E660812E-JC/L

8M x 8bit CMOS Dynamic RAM with Extended Data Out

DESCRIPTION Thisisafamilyof8,388,608x8bitExtendedDataOutModeCMOSDRAMs.ExtendedDataOutModeoffershighspeedrandomaccessofmemorycellswithinthesamerow.Refreshcycle(4KRef.or8KRef.),accesstime(-45,-50or-60),powerconsumption(NormalorLowpower)areoptionalfe

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K4E660812E-JCSLASHL

8M x 8bit CMOS Dynamic RAM with Extended Data Out

DESCRIPTION Thisisafamilyof8,388,608x8bitExtendedDataOutModeCMOSDRAMs.ExtendedDataOutModeoffershighspeedrandomaccessofmemorycellswithinthesamerow.Refreshcycle(4KRef.or8KRef.),accesstime(-45,-50or-60),powerconsumption(NormalorLowpower)areoptionalfe

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K4E660812E-TC/L

8M x 8bit CMOS Dynamic RAM with Extended Data Out

DESCRIPTION Thisisafamilyof8,388,608x8bitExtendedDataOutModeCMOSDRAMs.ExtendedDataOutModeoffershighspeedrandomaccessofmemorycellswithinthesamerow.Refreshcycle(4KRef.or8KRef.),accesstime(-45,-50or-60),powerconsumption(NormalorLowpower)areoptionalfe

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K4E660812E-TCSLASHL

8M x 8bit CMOS Dynamic RAM with Extended Data Out

DESCRIPTION Thisisafamilyof8,388,608x8bitExtendedDataOutModeCMOSDRAMs.ExtendedDataOutModeoffershighspeedrandomaccessofmemorycellswithinthesamerow.Refreshcycle(4KRef.or8KRef.),accesstime(-45,-50or-60),powerconsumption(NormalorLowpower)areoptionalfe

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K4E660812B

8Mx8bitCMOSDynamicRAMwithExtendedDataOut

DESCRIPTION Thisisafamilyof8,388,608x8bitExtendedDataOutModeCMOSDRAMs.ExtendedDataOutModeoffershighspeedrandomaccessofmemorycellswithinthesamerow.Refreshcycle(4KRef.or8KRef.),accesstime(-45,-50or-60),powerconsumption(NormalorLowpower)areoptionalfe

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K4E660812C

8Mx8bitCMOSDynamicRAMwithExtendedDataOut

DESCRIPTION Thisisafamilyof8,388,608x8bitExtendedDataOutModeCMOSDRAMs.ExtendedDataOutModeoffershighspeedrandomaccessofmemorycellswithinthesamerow.Refreshcycle(4KRef.or8KRef.),accesstime(-45,-50or-60),powerconsumption(NormalorLowpower)areoptionalfe

SamsungSamsung semiconductor

三星三星半導(dǎo)體

詳細(xì)參數(shù)

  • 型號(hào)：

    K4E660812E

  • 制造商：

    SAMSUNG

  • 制造商全稱：

    Samsung semiconductor

  • 功能描述：

    8M x 8bit CMOS Dynamic RAM with Extended Data Out

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
SAMSUNG
6000
面議
19
SOP
 詢價(jià)
SAMSUNG/三星
23+
TSOP
5000
一級(jí)代理原廠VIP渠道,專注軍工、汽車、醫(yī)療、工業(yè)、
 詢價(jià)
SAN
SSOP
2100
優(yōu)勢(shì)庫存
 詢價(jià)
SAMSUNG
24+
BGA
1172
詢價(jià)
SAMSANG
19+
BGA
256800
原廠代理渠道,每一顆芯片都可追溯原廠；
 詢價(jià)
SAMSUNG
24+
BGA
2140
全新原裝!現(xiàn)貨特價(jià)供應(yīng)
 詢價(jià)
SAMSUNG
23+
BGA
8560
受權(quán)代理!全新原裝現(xiàn)貨特價(jià)熱賣!
 詢價(jià)
SAMSUNG/三星
2447
BGA
100500
一級(jí)代理專營(yíng)品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,長(zhǎng)期排單到貨
 詢價(jià)
SAMSUNG/三星
19+
BGA
12501
進(jìn)口原裝現(xiàn)貨
 詢價(jià)
SAMSUNG/三星
23+
BGA
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價(jià)
更多K4E660812E供應(yīng)商 更新時(shí)間2025-2-28 15:18:00

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