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K4E641612B-TC

4M x 16bit CMOS Dynamic RAM with Extended Data Out

DESCRIPTION Thisisafamilyof4,194,304x16bitExtendedDataOutModeCMOSDRAMs.ExtendedDataOutModeoffershighspeedrandomaccessofmemorycellswithinthesamerow.Refreshcycle(4KRef.or8KRef.),accesstime(-45,-50or-60),powerconsumption(NormalorLowpower)areoptionalf

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K4E641612B

4Mx16bitCMOSDynamicRAMwithExtendedDataOut

DESCRIPTION Thisisafamilyof4,194,304x16bitExtendedDataOutModeCMOSDRAMs.ExtendedDataOutModeoffershighspeedrandomaccessofmemorycellswithinthesamerow.Refreshcycle(4KRef.or8KRef.),accesstime(-45,-50or-60),powerconsumption(NormalorLowpower)areoptionalf

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K4E641612B-L

4Mx16bitCMOSDynamicRAMwithExtendedDataOut

DESCRIPTION Thisisafamilyof4,194,304x16bitExtendedDataOutModeCMOSDRAMs.ExtendedDataOutModeoffershighspeedrandomaccessofmemorycellswithinthesamerow.Refreshcycle(4KRef.or8KRef.),accesstime(-45,-50or-60),powerconsumption(NormalorLowpower)areoptionalf

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K4E641612C

4Mx16bitCMOSDynamicRAMwithExtendedDataOut

DESCRIPTION Thisisafamilyof4,194,304x16bitExtendedDataOutModeCMOSDRAMs.ExtendedDataOutModeoffershighspeedrandomaccessofmemorycellswithinthesamerow.Refreshcycle(4KRef.or8KRef.),accesstime(-45,-50or-60),powerconsumption(NormalorLowpower)areoptionalf

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K4E641612C-L

4Mx16bitCMOSDynamicRAMwithExtendedDataOut

DESCRIPTION Thisisafamilyof4,194,304x16bitExtendedDataOutModeCMOSDRAMs.ExtendedDataOutModeoffershighspeedrandomaccessofmemorycellswithinthesamerow.Refreshcycle(4KRef.or8KRef.),accesstime(-45,-50or-60),powerconsumption(NormalorLowpower)areoptionalf

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K4E641612C-T

4Mx16bitCMOSDynamicRAMwithExtendedDataOut

DESCRIPTION Thisisafamilyof4,194,304x16bitExtendedDataOutModeCMOSDRAMs.ExtendedDataOutModeoffershighspeedrandomaccessofmemorycellswithinthesamerow.Refreshcycle(4KRef.or8KRef.),accesstime(-45,-50or-60),powerconsumption(NormalorLowpower)areoptionalf

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K4E641612C-TC

4Mx16bitCMOSDynamicRAMwithExtendedDataOut

DESCRIPTION Thisisafamilyof4,194,304x16bitExtendedDataOutModeCMOSDRAMs.ExtendedDataOutModeoffershighspeedrandomaccessofmemorycellswithinthesamerow.Refreshcycle(4KRef.or8KRef.),accesstime(-45,-50or-60),powerconsumption(NormalorLowpower)areoptionalf

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K4E641612D

CMOSDRAM

4Mx16bitCMOSDynamicRAMwithExtendedDataOut

SamsungSamsung semiconductor

三星三星半導(dǎo)體

詳細(xì)參數(shù)

  • 型號：

    K4E641612B-TC

  • 制造商：

    SAMSUNG

  • 制造商全稱：

    Samsung semiconductor

  • 功能描述：

    4M x 16bit CMOS Dynamic RAM with Extended Data Out

供應(yīng)商型號品牌批號封裝庫存備注價格
SAMSUNG
6000
面議
19
TSOP
 詢價
SAMSUNG
22+
BGA
2140
全新原裝!現(xiàn)貨特價供應(yīng)
 詢價
SAMSUNG
2023+環(huán)?，F(xiàn)貨
BGA
4425
專注軍工、汽車、醫(yī)療、工業(yè)等方案配套一站式服務(wù)
 詢價
SAM
24+
BGA
1971
詢價
SAM
23+
BGA
7000
絕對全新原裝!100%保質(zhì)量特價!請放心訂購!
 詢價
SAM
23+
BGA
8890
價格優(yōu)勢/原裝現(xiàn)貨/客戶至上/歡迎廣大客戶來電查詢
 詢價
SAMSANG
19+
BGA
256800
原廠代理渠道,每一顆芯片都可追溯原廠；
 詢價
SAMSUNG
23+
BGA
8650
受權(quán)代理!全新原裝現(xiàn)貨特價熱賣!
 詢價
SAMSUNG
24+
BGA
90000
一級代理商進(jìn)口原裝現(xiàn)貨、價格合理
 詢價
SAMSUNG
22+
BGA
32350
原裝正品 假一罰十 公司現(xiàn)貨
 詢價
更多K4E641612B-TC供應(yīng)商 更新時間2024-11-6 14:19:00

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