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K4D26323RA-GC

1M x 32Bit x 4 Banks Double Data Rate Synchronous RAM with Bi-directional Data Strobe and DLL

GENERALDESCRIPTION FOR1Mx32Bitx4BankDDRSDRAM TheK4D26323RAis134,217,728bitsofhypersynchronousdatarateDynamicRAMorganizedas4x1,048,576wordsby32bits,fabricatedwithSAMSUNG’shighperformanceCMOStechnology.SynchronousfeatureswithDataStrobeallowextremelyhi

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K4D26323RA-GC2A

1M x 32Bit x 4 Banks Double Data Rate Synchronous RAM with Bi-directional Data Strobe and DLL

GENERALDESCRIPTION FOR1Mx32Bitx4BankDDRSDRAM TheK4D26323RAis134,217,728bitsofhypersynchronousdatarateDynamicRAMorganizedas4x1,048,576wordsby32bits,fabricatedwithSAMSUNG’shighperformanceCMOStechnology.SynchronousfeatureswithDataStrobeallowextremelyhi

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K4D26323RA-GC33

1M x 32Bit x 4 Banks Double Data Rate Synchronous RAM with Bi-directional Data Strobe and DLL

GENERALDESCRIPTION FOR1Mx32Bitx4BankDDRSDRAM TheK4D26323RAis134,217,728bitsofhypersynchronousdatarateDynamicRAMorganizedas4x1,048,576wordsby32bits,fabricatedwithSAMSUNG’shighperformanceCMOStechnology.SynchronousfeatureswithDataStrobeallowextremelyhi

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K4D26323RA-GC36

1M x 32Bit x 4 Banks Double Data Rate Synchronous RAM with Bi-directional Data Strobe and DLL

GENERALDESCRIPTION FOR1Mx32Bitx4BankDDRSDRAM TheK4D26323RAis134,217,728bitsofhypersynchronousdatarateDynamicRAMorganizedas4x1,048,576wordsby32bits,fabricatedwithSAMSUNG’shighperformanceCMOStechnology.SynchronousfeatureswithDataStrobeallowextremelyhi

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K4D26323QG

128MbitGDDRSDRAM

1Mx32Bitx4BanksGraphicDoubleDataRateSynchronousDRAMwithBi-directionalDataStrobeandDLL GENERALDESCRIPTION FOR1Mx32Bitx4BankDDRSDRAM TheK4D26323QGis134,217,728bitsofhypersynchronousdatarateDynamicRAMorganizedas4x1,048,576wordsby32bits,fabricat

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K4D26323RA

1Mx32Bitx4BanksDoubleDataRateSynchronousRAMwithBi-directionalDataStrobeandDLL

GENERALDESCRIPTION FOR1Mx32Bitx4BankDDRSDRAM TheK4D26323RAis134,217,728bitsofhypersynchronousdatarateDynamicRAMorganizedas4x1,048,576wordsby32bits,fabricatedwithSAMSUNG’shighperformanceCMOStechnology.SynchronousfeatureswithDataStrobeallowextremelyhi

SamsungSamsung semiconductor

三星三星半導(dǎo)體

詳細參數(shù)

  • 型號：

    K4D26323RA-GC

  • 制造商：

    SAMSUNG

  • 制造商全稱：

    Samsung semiconductor

  • 功能描述：

    1M x 32Bit x 4 Banks Double Data Rate Synchronous RAM with Bi-directional Data Strobe and DLL

供應(yīng)商型號品牌批號封裝庫存備注價格
-
24+
3880
詢價
SAMSUNG
22+
BGA
2560
絕對原裝!現(xiàn)貨熱賣!
 詢價
SAMSUNG
03+
BGA
4
詢價
SAMSUNG
09+
BGA
5500
原裝無鉛,優(yōu)勢熱賣
 詢價
SAMSUNG
BGA
0310+
215
全新原裝進口自己庫存優(yōu)勢
 詢價
SAMSUNG
23+
BGA
5000
原裝正品,假一罰十
 詢價
SAMSUNG
23+
BGA
1009
特價庫存
 詢價
SANSUNG
2016+
BGA
9000
只做原裝,假一罰十,公司可開17%增值稅發(fā)票!
 詢價
SAMSUNG
2339+
BGA
5825
公司原廠原裝現(xiàn)貨假一罰十!特價出售!強勢庫存!
 詢價
SAMSUNG
24+
BGA-144
5000
只做原裝公司現(xiàn)貨
 詢價
更多K4D26323RA-GC供應(yīng)商 更新時間2024-11-17 13:30:00

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