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K4B4G0846B

DDP 4Gb B-die DDR3 SDRAM Specification

KeyFeatures ?JEDECstandard1.5V±0.075VPowerSupply ?VDDQ=1.5V±0.075V ?400MHzfCKfor800Mb/sec/pin,533MHzfCKfor1066Mb/sec/pin, 667MHzfCKfor1333Mb/sec/pin ?8Banks ?PostedCAS ?ProgrammableCASLatency(postedCAS):6,7,8,9,10 ?ProgrammableAdditiveLatency:0,

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K4B4G0846B

DDR3 SDRAM Memory

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K4B4G0846B-MCF7

DDP 4Gb B-die DDR3 SDRAM Specification

KeyFeatures ?JEDECstandard1.5V±0.075VPowerSupply ?VDDQ=1.5V±0.075V ?400MHzfCKfor800Mb/sec/pin,533MHzfCKfor1066Mb/sec/pin, 667MHzfCKfor1333Mb/sec/pin ?8Banks ?PostedCAS ?ProgrammableCASLatency(postedCAS):6,7,8,9,10 ?ProgrammableAdditiveLatency:0,

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K4B4G0846B-MCF8

DDP 4Gb B-die DDR3 SDRAM Specification

KeyFeatures ?JEDECstandard1.5V±0.075VPowerSupply ?VDDQ=1.5V±0.075V ?400MHzfCKfor800Mb/sec/pin,533MHzfCKfor1066Mb/sec/pin, 667MHzfCKfor1333Mb/sec/pin ?8Banks ?PostedCAS ?ProgrammableCASLatency(postedCAS):6,7,8,9,10 ?ProgrammableAdditiveLatency:0,

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K4B4G0846B-MCH9

DDP 4Gb B-die DDR3 SDRAM Specification

KeyFeatures ?JEDECstandard1.5V±0.075VPowerSupply ?VDDQ=1.5V±0.075V ?400MHzfCKfor800Mb/sec/pin,533MHzfCKfor1066Mb/sec/pin, 667MHzfCKfor1333Mb/sec/pin ?8Banks ?PostedCAS ?ProgrammableCASLatency(postedCAS):6,7,8,9,10 ?ProgrammableAdditiveLatency:0,

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K4B4G0846C

DDR3SDRAMMemory

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K4B4G0846D

DDR3SDRAMMemory

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K4B4G0846D-BC

PRODUCTSELECTIONGUIDEDisplays,MemoryandStorage

Samsungcontinuestoleadtheindustrywiththebroadestportfolioofmemoryproductsand displaytechnology.Itsdisplaypanels,DRAM,flash,mobileandgraphicsmemoryarefoundinmany computers–fromultrabookstopowerfulservers–andinawiderangeofhandhelddevicessuch assmartphon

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K4B4G0846E

4GbE-dieDDR3LSDRAM

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K4B4G0846E-BMMA

4GbE-dieDDR3LSDRAM

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K4B4G0846E-BYMA

4GbE-dieDDR3LSDRAM

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K4B4G0846Q-HC

PRODUCTSELECTIONGUIDEDisplays,MemoryandStorage

Samsungcontinuestoleadtheindustrywiththebroadestportfolioofmemoryproductsand displaytechnology.Itsdisplaypanels,DRAM,flash,mobileandgraphicsmemoryarefoundinmany computers–fromultrabookstopowerfulservers–andinawiderangeofhandhelddevicessuch assmartphon

SamsungSamsung semiconductor

三星三星半導(dǎo)體

詳細(xì)參數(shù)

  • 型號：

    K4B4G0846B

  • 制造商：

    SAMSUNG

  • 制造商全稱：

    Samsung semiconductor

  • 功能描述：

    DDP 4Gb B-die DDR3 SDRAM Specification

供應(yīng)商型號品牌批號封裝庫存備注價格
SAMSUNG/三星
19+
FGBA
1280
詢價
SAMSUNG
16+
PLCC18
4000
進(jìn)口原裝現(xiàn)貨/價格優(yōu)勢!
 詢價
SAMSUNG
11+
BGA
1
詢價
SAMSUNG
2022
FBGA
21
原廠原裝正品,價格超越代理
 詢價
SAMSUNG
2016+
FBGA
2000
只做原裝,假一罰十,公司優(yōu)勢內(nèi)存型號!
 詢價
SAMSUNG
17+
BGA
9800
全新進(jìn)口原裝現(xiàn)貨假一罰十
 詢價
SAMSUNG
24+
FBGA
5000
只做原裝公司現(xiàn)貨
 詢價
Samsung
2021+
FPGA78
4600
只做原裝假一罰十
 詢價
SAMSANG
19+
BGA
256800
原廠代理渠道,每一顆芯片都可追溯原廠；
 詢價
SMA
23+
NA
110
專做原裝正品,假一罰百!
 詢價
更多K4B4G0846B供應(yīng)商 更新時間2024-11-16 16:00:00

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