首頁(yè) >JCS55N06FH>規(guī)格書(shū)列表
零件編號(hào) | 下載&訂購(gòu) | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
N-CHANNELMOSFET | JSMCJILIN SINO-MICROELECTRONICS CO., LTD. 華微電子吉林華微電子股份有限公司 | JSMC | ||
60VN-ChannelMOSFET | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
N??hannelPowerMOSFET | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
TMOSPOWERFET55AMPERES60VOLTS TheD2PAKpackagehasthecapabilityofhousingalargerdiethananyexistingsurfacemountpackagewhichallowsittobeusedinapplicationsthatrequiretheuseofsurfacemountcomponentswithhigherpowerandlowerRDS(on)capabilities.ThishighvoltageMOSFETusesanadvancedterminationscheme | Motorola Motorola, Inc | Motorola | ||
TMOSPOWERFET55AMPERES60VOLTSRDS(on)=18mohm TMOSE-FETPowerFieldEffectTransistor N–ChannelEnhancement–ModeSiliconGate ThisadvancedhighvoltageTMOSE–FETisdesignedtowithstandhighenergyintheavalanchemodeandswitchefficiently.Thisnewhighenergydevicealsooffersadrain–to–sourcediodewithfastrecoverytime.Desig | Motorola Motorola, Inc | Motorola | ||
TMOSPOWERFET55AMPERES60VOLTSRDS(on)=18mohm TMOSE-FETPowerFieldEffectTransistor N–ChannelEnhancement–ModeSiliconGate ThisadvancedhighvoltageTMOSE–FETisdesignedtowithstandhighenergyintheavalanchemodeandswitchefficiently.Thisnewhighenergydevicealsooffersadrain–to–sourcediodewithfastrecoverytime.Desig | Motorola Motorola, Inc | Motorola | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=55A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=16mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司 | ISC | ||
N-CHANNELENHANCEMENTMODELOWTHRESHOLDPOWERMOSTRANSISTOR N-CHANNELENHANCEMENTMODELOWTHRESHOLDPOWERMOSTRANSISTOR ■TYPICALRDS(on)=0.02? ■AVALANCHERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100°C ■LOWGATECHARGE ■HIGHCURRENTCAPABILITY ■LOGICLEVELCOMPATIBLEINPUT ■175°COPEARTINGTEMPERATUREFORSTA | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體(ST)集團(tuán) | STMICROELECTRONICS | ||
N-Channel60-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司 | VBSEMI | ||
N-Channel60-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司 | VBSEMI | ||
N-CHANNELENHANCEMENTMODELOWTHRESHOLDPOWERMOSTRANSISTOR N-CHANNELENHANCEMENTMODELOWTHRESHOLDPOWERMOSTRANSISTOR ■TYPICALRDS(on)=0.02? ■AVALANCHERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100°C ■LOWGATECHARGE ■HIGHCURRENTCAPABILITY ■LOGICLEVELCOMPATIBLEINPUT ■175°COPEARTINGTEMPERATUREFORSTA | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體(ST)集團(tuán) | STMICROELECTRONICS | ||
N-CHANNELENHANCEMENTMODELOWTHRESHOLDPOWERMOSTRANSISTOR N-CHANNELENHANCEMENTMODELOWTHRESHOLDPOWERMOSTRANSISTOR ■TYPICALRDS(on)=0.02? ■AVALANCHERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100°C ■LOWGATECHARGE ■HIGHCURRENTCAPABILITY ■LOGICLEVELCOMPATIBLEINPUT ■175°COPEARTINGTEMPERATUREFORSTA | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體(ST)集團(tuán) | STMICROELECTRONICS |
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
Sino |
2020+ |
TO-220 |
49460 |
公司代理品牌,原裝現(xiàn)貨超低價(jià)清倉(cāng)! |
詢(xún)價(jià) | ||
SINO |
23+ |
TO-220 |
10000 |
公司只做原裝正品 |
詢(xún)價(jià) | ||
Sino |
TO-220 |
22+ |
6000 |
十年配單,只做原裝 |
詢(xún)價(jià) | ||
Sino |
23+ |
TO-220 |
6000 |
原裝正品,支持實(shí)單 |
詢(xún)價(jià) | ||
sino |
2221+ |
TO-220 |
15607 |
一級(jí)代理/分銷(xiāo)渠道價(jià)格優(yōu)勢(shì) 十年芯程一路只做原裝正品 |
詢(xún)價(jià) | ||
華微JSMC |
22+ |
TO-220 |
10000 |
原裝現(xiàn)貨,假一賠十 |
詢(xún)價(jià) | ||
Sino |
22+ |
TO-220 |
25000 |
只做原裝進(jìn)口現(xiàn)貨,專(zhuān)注配單 |
詢(xún)價(jià) | ||
sino |
24+ |
TO-220 |
9000 |
只做原裝正品 有掛有貨 假一賠十 |
詢(xún)價(jià) | ||
sino |
23+ |
TO-220 |
10000 |
原裝正品現(xiàn)貨 |
詢(xún)價(jià) | ||
Sino |
24+ |
TO-TO-220 |
12300 |
獨(dú)立分銷(xiāo)商 公司只做原裝 誠(chéng)心經(jīng)營(yíng) 免費(fèi)試樣正品保證 |
詢(xún)價(jià) |
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