首頁(yè) >JCS2N60R-O-R-N-B>規(guī)格書(shū)列表
| 零件編號(hào) | 下載&訂購(gòu) | 功能描述 | 制造商&上傳企業(yè) | LOGO |
|---|---|---|---|---|
JCS2N60R-O-R-N-B | N-CHANNEL MOSFET | JSMCJILIN SINO-MICROELECTRONICS CO., LTD. 華微電子吉林華微電子股份有限公司 | JSMC | |
JCS2N60R-O-R-N-B | N-Channel MOSFET uses advanced trench technology | DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD 杜因特深圳市杜因特半導(dǎo)體有限公司 | DOINGTER | |
MAINCHARACTERISTICS | JSMCJILIN SINO-MICROELECTRONICS CO., LTD. 華微電子吉林華微電子股份有限公司 | JSMC | ||
N-CHANNELMOSFET | JSMCJILIN SINO-MICROELECTRONICS CO., LTD. 華微電子吉林華微電子股份有限公司 | JSMC | ||
N-CHANNELMOSFET | JSMCJILIN SINO-MICROELECTRONICS CO., LTD. 華微電子吉林華微電子股份有限公司 | JSMC | ||
MAINCHARACTERISTICS | JSMCJILIN SINO-MICROELECTRONICS CO., LTD. 華微電子吉林華微電子股份有限公司 | JSMC | ||
N-CHANNELMOSFET | JSMCJILIN SINO-MICROELECTRONICS CO., LTD. 華微電子吉林華微電子股份有限公司 | JSMC | ||
N-CHANNELMOSFET | JSMCJILIN SINO-MICROELECTRONICS CO., LTD. 華微電子吉林華微電子股份有限公司 | JSMC | ||
JJW | ||||
NCHANNELMOSFIELDEFFECTTRANSISTOR GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.Itismainlysuitableforswitchingmodepowersupplies. FEATURES ?VDSS=600V,ID=2.0A ?RDS(ON)=4.4?(Max)@VGS | KECKEC CORPORATION KEC株式會(huì)社 | KEC | ||
NCHANNELMOSFIELDEFFECTTRANSISTOR GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.Itismainlysuitableforswitchingmodepowersupplies. FEATURES ?VDSS=600V,ID=2.0A ?RDS(ON)=4.4?(Max)@VGS | KECKEC CORPORATION KEC株式會(huì)社 | KEC | ||
N-Channel650V(D-S)MOSFET FEATURES ?LowGateChargeQgResultsinSimpleDriveRequirement ?ImprovedGate,AvalancheandDynamicdV/dtRuggedness ?FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent ?ComplianttoRoHSdirective2002/95/EC | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司 | VBSEMI | ||
NCHANNELMOSFIELDEFFECTTRANSISTOR GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.Itismainlysuitableforswitchingmodepowersupplies. FEATURES ?VDSS=600V,ID=2.0A ?RDS(ON)=4.4?(Max)@VGS | KECKEC CORPORATION KEC株式會(huì)社 | KEC | ||
NCHANNELMOSFIELDEFFECTTRANSISTOR GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.Itismainlysuitableforswitchingmodepowersupplies. FEATURES ?VDSS=600V,ID=2.0A ?RDS(ON)=4.4?(Max)@VGS | KECKEC CORPORATION KEC株式會(huì)社 | KEC | ||
NCHANNELMOSFIELDEFFECTTRANSISTOR GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.Itismainlysuitableforelectronicballastandswitchingmodepowersupplies. FEATURES ?VDSS=600V,ID=2A ?Drai | KECKEC CORPORATION KEC株式會(huì)社 | KEC | ||
NCHANNELMOSFIELDEFFECTTRANSISTOR GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.Itismainlysuitableforelectronicballastandswitchingmodepowersupplies. FEATURES ?VDSS=600V,ID=2A ?Drai | KECKEC CORPORATION KEC株式會(huì)社 | KEC | ||
NCHANNELMOSFIELDEFFECTTRANSISTOR GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.Itismainlysuitableforswitchingmodepowersupplies. FEATURES ?VDSS=600V,ID=2.0A ?RDS(ON)=4.4?(Max)@VGS | KECKEC CORPORATION KEC株式會(huì)社 | KEC | ||
NCHANNELMOSFIELDEFFECTTRANSISTOR GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.Itismainlysuitableforswitchingmodepowersupplies. FEATURES ?VDSS=600V,ID=2.0A ?RDS(ON)=4.4?(Max)@VGS | KECKEC CORPORATION KEC株式會(huì)社 | KEC | ||
ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics. GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.Itismainlysuitableforswitchingmodepowersupplies. FEATURES ?VDSS=600V,ID=0.70A ?RDS(ON)=4.4?(Max)@VGS | KECKEC CORPORATION KEC株式會(huì)社 | KEC | ||
NCHANNELMOSFIELDEFFECTTRANSISTOR GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.Itismainlysuitableforelectronicballastandswitchingmodepowersupplies. FEATURES ?VDSS=600V,ID=2A ?Drai | KECKEC CORPORATION KEC株式會(huì)社 | KEC |
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
Sino-Micro |
22+ |
TO-252 |
6000 |
十年配單,只做原裝 |
詢價(jià) | ||
Sino-Micro |
23+ |
TO-252 |
6000 |
原裝正品，支持實(shí)單 |
詢價(jià) | ||
Sino-Micro |
22+ |
TO-252 |
25000 |
只做原裝進(jìn)口現(xiàn)貨,專注配單 |
詢價(jià) | ||
2322+ |
NA |
33220 |
無(wú)敵價(jià)格 主銷品牌 正規(guī)渠道訂貨 免費(fèi)送樣!!! |
詢價(jià) | |||
華微 |
2048+ |
TO-251 |
9851 |
只做原裝正品現(xiàn)貨!或訂貨假一賠十! |
詢價(jià) | ||
華微 |
TO-251 |
68900 |
原包原標(biāo)簽100%進(jìn)口原裝常備現(xiàn)貨! |
詢價(jià) | |||
華微 |
23+ |
TO-251 |
8000 |
只做原裝現(xiàn)貨 |
詢價(jià) | ||
華微 |
23+ |
TO-251 |
7000 |
詢價(jià) | |||
HW |
23+ |
TO-252 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價(jià) | ||
HW |
21+ |
TO-252 |
10000 |
原裝現(xiàn)貨假一罰十 |
詢價(jià) |
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