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JANTXV1N5531DUR

LEADLESS PACKAGE FOR SURFACE MOUNT ZENER DIODE, 500mW

?1N5518BUR-1THRU1N5546BUR-1AVAILABLEINJAN,JANTXANDJANTXVPERMIL-PRF-19500/437 ?ZENERDIODE,500mW ?LEADLESSPACKAGEFORSURFACEMOUNT ?LOWREVERSELEAKAGECHARACTERISTICS ?METALLURGICALLYBONDED

MicrosemiMicrosemi Corporation

美高森美美高森美公司

JANTXV1N5531DUR-1

LEADLESS PACKAGE FOR SURFACE MOUNT ZENER DIODE, 500mW

?1N5518BUR-1THRU1N5546BUR-1AVAILABLEINJAN,JANTXANDJANTXVPERMIL-PRF-19500/437 ?ZENERDIODE,500mW ?LEADLESSPACKAGEFORSURFACEMOUNT ?LOWREVERSELEAKAGECHARACTERISTICS ?METALLURGICALLYBONDED

MicrosemiMicrosemi Corporation

美高森美美高森美公司

JANTXV1N5531DUR-1

包裝：卷帶（TR） 封裝/外殼：DO-213AA（玻璃） 類別：分立半導(dǎo)體產(chǎn)品 二極管 - 齊納 - 單 描述：DIODE ZENER 11V 500MW DO213AA

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

JANTXV1N5531DUR-1/TR

包裝：散裝 封裝/外殼：DO-213AA（玻璃） 類別：分立半導(dǎo)體產(chǎn)品 二極管 - 齊納 - 單 描述：VOLTAGE REGULATOR

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

1N5531

LEADLESSPACKAGEFORSURFACEMOUNTZENERDIODE,500mW

?1N5518BUR-1THRU1N5546BUR-1AVAILABLEINJAN,JANTXANDJANTXVPERMIL-PRF-19500/437 ?ZENERDIODE,500mW ?LEADLESSPACKAGEFORSURFACEMOUNT ?LOWREVERSELEAKAGECHARACTERISTICS ?METALLURGICALLYBONDED

MicrosemiMicrosemi Corporation

美高森美美高森美公司

1N5531

LOWVOLTAGEAVALANCHEZENERDIODESHIGHPERFORMANCE:LOWNOISE,LOWLEAKAGE

LOWVOLTAGEAVALANCHEZENERDIODES HIGHPERFORMANCE:LOWNOISE,LOWLEAKAGE 1.PackageStyleDO-7 2.SuffixdenotesVztolerance:nonsuffix±20,Asuffix±10:Ir@Vr1,Vz,+Vfonly.SuffixB±5:Ir@Vr2,Vz,DVz,Vf,ND. 3.Measuredwith10,60HzACsuperimposedonIzt. 4.Measuredfrom

KNOX

Knox Semiconductor, Inc

1N5531

0.4WLOWVOLTAGEAVALANCHEDIODES

FEATURES *Lowzenernoisespecified *Lowzenerimpedance *Lowleakagecurrent *Hermeticallysealedglasspackage

JGDJinan Gude Electronic Device

濟南固锝電子濟南固锝電子器件有限公司

1N5531

0.4WLOWVOLTAGEAVALANCHEDIODES

FEATURES *Lowzenernoisespecified *Lowzenerimpedance *Lowleakagecurrent *Hermeticallysealedglasspackage

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

1N5531

LowVoltageAvalanche500mWZenerDiodesDO-35

FEATURES ?LOWZENERNOISESPECIFIED ?LOWZENERIMPEDANCE ?LOWLEAKAGECURRENT ?HERMETICALLYSEALEDGLASSPACKAGE ?JAN/JANTX/JANTXVAVAILIBLEON1N5518-1TROUGH1N5546-1PERMIL-S-19500/437

MicrosemiMicrosemi Corporation

美高森美美高森美公司

1N5531

LOWVOLTAGEAVALANCHEDIODESDO-35

FEATURES ?LOWZENERNOISESPECIFIED ?LOWZENERIMPEDANCE ?LOWLEAKAGECURRENT ?HERMETICALLYSEALEDGLASSPACKAGE ?JAN/JANTX/JANTXVAVAILIBLEON1N5518-1TROUGH1N5546-1PERMIL-S-19500/437

MicrosemiMicrosemi Corporation

美高森美美高森美公司

1N5531A

LOWVOLTAGEAVALANCHESSILICONOXIDEPASSIVATEDZENERREGULATORDIODES

LOWVOLTAGEAVALANCHESSILICONOXIDEPASSIVATEDZENERREGULATORDIODES LOWVOLTAGEAVALANCHEZENERDIODES 400MILLIWATTS 3.3THRU33VOLTS

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

1N5531A

0.4WLOWVOLTAGEAVALANCHEDIODES

FEATURES *Lowzenernoisespecified *Lowzenerimpedance *Lowleakagecurrent *Hermeticallysealedglasspackage

JGDJinan Gude Electronic Device

濟南固锝電子濟南固锝電子器件有限公司

1N5531A

LEADLESSPACKAGEFORSURFACEMOUNTZENERDIODE,500mW

?1N5518BUR-1THRU1N5546BUR-1AVAILABLEINJAN,JANTXANDJANTXVPERMIL-PRF-19500/437 ?ZENERDIODE,500mW ?LEADLESSPACKAGEFORSURFACEMOUNT ?LOWREVERSELEAKAGECHARACTERISTICS ?METALLURGICALLYBONDED

MicrosemiMicrosemi Corporation

美高森美美高森美公司

1N5531AUR

LEADLESSPACKAGEFORSURFACEMOUNTZENERDIODE,500mW

?1N5518BUR-1THRU1N5546BUR-1AVAILABLEINJAN,JANTXANDJANTXVPERMIL-PRF-19500/437 ?ZENERDIODE,500mW ?LEADLESSPACKAGEFORSURFACEMOUNT ?LOWREVERSELEAKAGECHARACTERISTICS ?METALLURGICALLYBONDED

MicrosemiMicrosemi Corporation

美高森美美高森美公司

1N5531B

LEADLESSPACKAGEFORSURFACEMOUNTZENERDIODE,500mW

?1N5518BUR-1THRU1N5546BUR-1AVAILABLEINJAN,JANTXANDJANTXVPERMIL-PRF-19500/437 ?ZENERDIODE,500mW ?LEADLESSPACKAGEFORSURFACEMOUNT ?LOWREVERSELEAKAGECHARACTERISTICS ?METALLURGICALLYBONDED

MicrosemiMicrosemi Corporation

美高森美美高森美公司

1N5531B

LOWREVERSELEAKAGECHARACTERISTICS

?1N5518-1THRU1N5546B-1AVAILABLEINJAN,JANTXANDJANTXVPERMIL-PRF-19500/437 ?LOWREVERSELEAKAGECHARACTERISTICS ?LOWNOISECHARACTERISTICS ?DOUBLEPLUGCONSTRUCTION ?METALLURGICALLYBONDED

CDI-DIODE

Compensated Deuices Incorporated

1N5531B

0.4WLOWVOLTAGEAVALANCHEDIODES

FEATURES *Lowzenernoisespecified *Lowzenerimpedance *Lowleakagecurrent *Hermeticallysealedglasspackage

JGDJinan Gude Electronic Device

濟南固锝電子濟南固锝電子器件有限公司

1N5531B

LOWREVERSELEAKAGECHARACTERISTICS

MicrosemiMicrosemi Corporation

美高森美美高森美公司

1N5531B

0.5WZenerDiode

Features ?SharpReverseCharacteristics ?LowReverseCurrentLevels ?HighReliabilityGoldBackMetal ?HighReliabilityTestedGrades.

SS

Silicon Supplies

1N5531BUR

LEADLESSPACKAGEFORSURFACEMOUNTZENERDIODE,500mW

?1N5518BUR-1THRU1N5546BUR-1AVAILABLEINJAN,JANTXANDJANTXVPERMIL-PRF-19500/437 ?ZENERDIODE,500mW ?LEADLESSPACKAGEFORSURFACEMOUNT ?LOWREVERSELEAKAGECHARACTERISTICS ?METALLURGICALLYBONDED

MicrosemiMicrosemi Corporation

美高森美美高森美公司

供應(yīng)商型號品牌批號封裝庫存備注價格
Microsemi
1941+
N/A
909
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 詢價
MICROSEMI
1809+
DO-213
96
就找我吧!--邀您體驗愉快問購元件!
 詢價
Microchip
2022+
原廠原包裝
8600
全新原裝 支持表配單 中國著名電子元器件獨立分銷
 詢價
MICROSEMI
638
原裝正品
 詢價
MICROCHIP(美國微芯)
23+
DO35(DO204AH)
7350
現(xiàn)貨供應(yīng),當天可交貨!免費送樣,原廠技術(shù)支持!!!
 詢價
Microsemi
22+
NA
909
加我QQ或微信咨詢更多詳細信息,
 詢價
更多JANTXV1N5531DUR供應(yīng)商 更新時間2024-11-7 10:18:00

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