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JANTXV1N2997R

10 WATT ZENER DIODES

DESCRIPTION Thesehighpower10WZenerdiodesrepresentedbytheJEDECregistered1N2970thru1N3015Band1N3993thru1N4000Aseriesprovidevoltageregulationinaselectionovera3.9Vto200Vbroadrangeofvoltages.Theymaybeoperatedupto10Wwithadequatemountingandheatsinkingwith

MicrosemiMicrosemi Corporation

美高森美美高森美公司

JANTXV1N2997RA

10 WATT ZENER DIODES

DESCRIPTION Thesehighpower10WZenerdiodesrepresentedbytheJEDECregistered1N2970thru1N3015Band1N3993thru1N4000Aseriesprovidevoltageregulationinaselectionovera3.9Vto200Vbroadrangeofvoltages.Theymaybeoperatedupto10Wwithadequatemountingandheatsinkingwith

MicrosemiMicrosemi Corporation

美高森美美高森美公司

JANTXV1N2997RB

10 WATT ZENER DIODES

DESCRIPTION Thesehighpower10WZenerdiodesrepresentedbytheJEDECregistered1N2970thru1N3015Band1N3993thru1N4000Aseriesprovidevoltageregulationinaselectionovera3.9Vto200Vbroadrangeofvoltages.Theymaybeoperatedupto10Wwithadequatemountingandheatsinkingwith

MicrosemiMicrosemi Corporation

美高森美美高森美公司

JANTXV1N2997RC

10 WATT ZENER DIODES

DESCRIPTION Thesehighpower10WZenerdiodesrepresentedbytheJEDECregistered1N2970thru1N3015Band1N3993thru1N4000Aseriesprovidevoltageregulationinaselectionovera3.9Vto200Vbroadrangeofvoltages.Theymaybeoperatedupto10Wwithadequatemountingandheatsinkingwith

MicrosemiMicrosemi Corporation

美高森美美高森美公司

JANTXV1N2997RD

10 WATT ZENER DIODES

DESCRIPTION Thesehighpower10WZenerdiodesrepresentedbytheJEDECregistered1N2970thru1N3015Band1N3993thru1N4000Aseriesprovidevoltageregulationinaselectionovera3.9Vto200Vbroadrangeofvoltages.Theymaybeoperatedupto10Wwithadequatemountingandheatsinkingwith

MicrosemiMicrosemi Corporation

美高森美美高森美公司

JANTXV1N2997RB

包裝:散裝 封裝/外殼:DO-203AA,DO-4,接線(xiàn)柱 類(lèi)別:分立半導(dǎo)體產(chǎn)品 二極管 - 齊納 - 單 描述:ZENER DIODE

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

1N2997

10WATTZENERDIODES

10WATTZENERDIODES

NAINA

Naina Semiconductor ltd.

1N2997

10WATTZENERDIODES

DESCRIPTION Thesehighpower10WZenerdiodesrepresentedbytheJEDECregistered1N2970thru1N3015Band1N3993thru1N4000Aseriesprovidevoltageregulationinaselectionovera3.9Vto200Vbroadrangeofvoltages.Theymaybeoperatedupto10Wwithadequatemountingandheatsinkingwith

MicrosemiMicrosemi Corporation

美高森美美高森美公司

1N2997

Glasspassivatedjunction

Features ●Glasspassivatedjunction ●Goodclampingability ●AvailableinNormalandReversepolarity ●MetricandUNFthreadtype ElectricalData ●DCPowerDissipation:10Watts ●VoltageRange6.8–200Volts ●Operatingtemperature-65°Cto+175°C ●Derating:80mW/oCabove50°C ●

AMERICASEMI

America Semiconductor, LLC

1N2997

10WZenerDiodes

AMERICASEMI

America Semiconductor, LLC

1N2997

ZENERDIODES

ZENERDIODES

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

1N2997A

10WATTZENERDIODES

10WATTZENERDIODES

NAINA

Naina Semiconductor ltd.

1N2997A

10WATTZENERDIODES

DESCRIPTION Thesehighpower10WZenerdiodesrepresentedbytheJEDECregistered1N2970thru1N3015Band1N3993thru1N4000Aseriesprovidevoltageregulationinaselectionovera3.9Vto200Vbroadrangeofvoltages.Theymaybeoperatedupto10Wwithadequatemountingandheatsinkingwith

MicrosemiMicrosemi Corporation

美高森美美高森美公司

1N2997AR

10WATTZENERDIODES

10WATTZENERDIODES

NAINA

Naina Semiconductor ltd.

1N2997B

REF/REGDIODE,5WP(D)10W

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

1N2997B

10WZENERDIODE6.8VOLTSTO200VOLTS5TOLERANCE

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

1N2997B

10WATTZENERDIODES

DESCRIPTION Thesehighpower10WZenerdiodesrepresentedbytheJEDECregistered1N2970thru1N3015Band1N3993thru1N4000Aseriesprovidevoltageregulationinaselectionovera3.9Vto200Vbroadrangeofvoltages.Theymaybeoperatedupto10Wwithadequatemountingandheatsinkingwith

MicrosemiMicrosemi Corporation

美高森美美高森美公司

1N2997B

Silicon10WATTZenerDiodes

DESCRIPTION Thesehighpower10WZenerdiodesrepresentedbytheJEDECregistered1N2970thru1N3015Band1N3993thru1N4000Aseriesprovidevoltageregulationinaselectionovera3.9Vto200Vbroadrangeofvoltages.Theymaybeoperatedupto10Wwithadequatemountingandheatsinkingwith

MicrosemiMicrosemi Corporation

美高森美美高森美公司

1N2997B

SILICON10WATTZENERDIODES

DESCRIPTION Thesehighpower10WZenerdiodesrepresentedbytheJEDECregistered1N2970thru1N3015Band1N3993thru1N4000Aseriesprovidevoltageregulationinaselectionovera3.9Vto200Vbroadrangeofvoltages.Theymaybeoperatedupto10Wwithadequatemountingandheatsinking

MicrosemiMicrosemi Corporation

美高森美美高森美公司

1N2997B

10WATTZENERDIODES

10WATTZENERDIODES

NAINA

Naina Semiconductor ltd.

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更多JANTXV1N2997R供應(yīng)商 更新時(shí)間2024-11-7 16:21:00