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2N5886

ComplementarySiliconHigh??owerTransistors

Complementarysiliconhigh?powertransistorsaredesignedforgeneral?purposepoweramplifierandswitchingapplications. Features ?LowCollector?EmitterSaturationVoltage? VCE(sat)=1.0Vdc,(max)atIC=15Adc ?LowLeakageCurrent ICEX=1.0mAdc(max)atRatedVoltage ?Excell

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

2N5886

PowerTransistors

PowerTransistors

ETCList of Unclassifed Manufacturers

未分類(lèi)制造商

2N5886

COMPLEMENTARYSILICONHIGHPOWERTRANSISTORS

DESCRIPTION The2N5884and2N5886arecomplementarysiliconpowertransistorinJedecTO-3metalcaseintededforuseinpowerlinearamplifiersandswitchingapplications. ■SGS-THOMSONPREFERREDSALESTYPES ■COMPLEMENTARYPNP-NPNDEVICES ■HIGHCURRENTCAPABILITY APPLICATION

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體（ST）集團(tuán)

2N5886

POWERTRANSISTORS(25A,200W)

General-PurposePowerAmplifierandSwitchingApplications Features ?LowCollector?EmitterSaturationVoltage? VCE(sat)=1.0V(Max)@IC=15A ?ExcellentDCCurrentGain? hFE=20~100@IC=10A

MOSPECMospec Semiconductor

統(tǒng)懋統(tǒng)懋半導(dǎo)體股份有限公司

2N5886

iscSiliconNPNPowerTransistors

DESCRIPTION ·LowCollectorSaturationVoltage- :VCE(sat)=1.0V(Max.)@IC=15A ·DCCurrentGain- :hFE=20-100@IC=10A ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·Designedforgeneral-purposepoweramplifierandswitching applications

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

2N5886

SiliconNPNPowerTransistors

SAVANTIC

Savantic, Inc.

2N5886

POWERTRANSISTORSCOMPLEMENTARYSILICON

...designedforgeneral?purposepoweramplifierandswitchingapplications. Features ?LowCollector?EmitterSaturationVoltage? VCE(sat)=1.0Vdc,(max)atIC=15Adc ?LowLeakageCurrent-ICEX=1.0mAdc(Max) ?ExcellentDCCurrentGain?hFE=20(Min)@IC=10Adc

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

2N5886

BipolarNPNDeviceinaHermeticallysealedTO3

SEME-LAB

Seme LAB

2N5886

COMPLEMENTARYSILICONHIGH-POWERTRANSISTORS

General-PurposePowerAmplifierandSwitchingApplications Features ?LowCollector?EmitterSaturationVoltage? VCE(sat)=1.0V(Max)@IC=15A ?ExcellentDCCurrentGain? hFE=20~100@IC=10A

bocaBoca Semiconductor Corporation

博卡博卡半導(dǎo)體公司

2N5886

iscSiliconNPNPowerTransistors

DESCRIPTION ·DCCurrentGain- :hFE=20(Min)@IC=10A ·LowSaturationVoltage- :VCE(sat)=1.0V(Max)@IC=15A ·ComplementtoType2N5883/5884 APPLICATIONS ·Designedforgeneralpurposepoweramplifierandswitchingapplications.

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

2N5886

SiliconNPNPowerTransistors

DESCRIPTION ·WithTO-3package ·Complementtotype2N58832N5884 APPLICATIONS ·Theyareintendedforuseinpowerlinearandswitchingapplications

JMNICQuanzhou Jinmei Electronic Co.,Ltd.

錦美電子泉州錦美電子有限公司

2N5886

SiliconNPNPowerTransistors

DESCRIPTION ·WithTO-3package ·Complementtotype2N58832N5884 ·Highpowerdissipations APPLICATIONS ·Theyareintendedforuseinpowerlinearandswitchingapplications

SAVANTIC

Savantic, Inc.

2N5886G

ComplementarySiliconHigh??owerTransistors

Complementarysiliconhigh?powertransistorsaredesignedforgeneral?purposepoweramplifierandswitchingapplications. Features ?LowCollector?EmitterSaturationVoltage? VCE(sat)=1.0Vdc,(max)atIC=15Adc ?LowLeakageCurrent ICEX=1.0mAdc(max)atRatedVoltage ?Excell

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

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8513
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Microchip Technology
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更多JANTX2N5886供應(yīng)商 更新時(shí)間2024-11-17 15:30:00

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