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1N4150

1N4150SIGNALDIODE

WILLASWILLAS ELECTRONIC CORP

威倫威倫電子股份有限公司

1N4150

SMALLSIGNALSWITCHINGDIODE

DSK

Diode Semiconductor Korea

1N4150

HIGHSPEEDSWITCHINGDIODE

FEATURES: ?Highswitchingspeed:max.4ns ?Continuousreversevoltage:max.50V ?Repetitivepeakreversevoltage:max.75V ?Repetitivepeakforwardcurrent:max.600mA ?Pb/RoHSFree MECHANICALDATA: Case:DO-35GlassCase Weight:approx.0.13g

EIC

EIC discrete Semiconductors

1N4150

Fastswitichingspeed

Surge

Surge Components

1N4150

SIGNALDIODE

RECTRON

Rectron Semiconductor

1N4150

Switchingdiode

Features 1)Glasssealedenvelope.(MSD,GSD) 2)Highspeed. 3)Highreliability. Application High-speedswitching

ROHMRohm

羅姆羅姆半導體集團

1N4150

SiliconEpitaxialPlanarDiode

FEATURES ?Siliconepitaxialplanardiode ?Lowforwardvoltagedrop ?AEC-Q101qualified ?Highforwardcurrentcapability ?Materialcategorization:fordefinitionsofcompliancepleaseseewww.vishay.com/doc?99912 APPLICATIONS ?Highspeedswitchandgeneralpurposeuseincomputerandi

VishayVishay Siliconix

威世科技威世科技半導體

1N4150

High-speeddiodes

DESCRIPTION The1N4150and1N4151arehigh-speedswitchingdiodesfabricatedinplanartechnology,andencapsulatedinhermeticallysealedleadedglassSOD27(DO-35)packages. FEATURES ?Hermeticallysealedleadedglass SOD27(DO-35)package ?Highswitchingspeed:max.4ns ?Generalapp

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

1N4150

FASTSWITCHINGDIODE

Features ?IdealforFastLogicApplications ?UltraFastSwitching ?HighReliability ?HighConductance

DIODES

Diodes Incorporated

1N4150

SILICONEPITAXIALPLANARDIODES

Features SiliconEpitaxialPlanarDiodes forgeneralpurposeandswitching Thetypes1N4149,1N4447and1N4449arealsoavailable inglasscaseDO-34.

Good-Ark

GOOD-ARK Electronics

1N4150

SmallSignalDiodes

FEATURES ◆SiliconEpitaxialPlanarDiode ◆Forgeneralpurposeandswitching. ◆Thisdiodeisalsoavailableinothercasestylesincluding:theSOD-123casewiththetypedesignation1N4150WandtheMiniMELFcasewiththetypedesignationLL4150.

GE

GE Industrial Company

1N4150

SMALLSIGNALSWITCHINGDIODE

FEATURES ?Siliconepitaxialplanardiode ?Fastswithchingdiodes ?1N4149,1N4447,1N4449arealsoavaibleinglasscaseDO-34

CHENYIShanghai Lunsure Electronic Tech

商朗電子上海商朗電子科技有限公司

1N4150

SWITCHINGDIODES

CDI-DIODE

Compensated Deuices Incorporated

1N4150

HighConductanceUltraFastDiode

HighConductanceUltraFastDiodes ?trr...4.0ns(MAX) ?VF...1.0V(MAX)@200mA

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

1N4150

Switchingdiode

ROHMRohm

羅姆羅姆半導體集團

1N4150

Switchingdiode

Features 1)Glasssealedenvelope.(MSD,GSD) 2)Highspeed. 3)Highreliability. Application High-speedswitching

ROHMRohm

羅姆羅姆半導體集團

1N4150

SiliconSwitchingDiodeDO-35GlassPackage

MicrosemiMicrosemi Corporation

美高森美美高森美公司

1N4150

silicondiode

SILICONDIODE

ETC1List of Unclassifed Manufacturers

etc未分類制造商未分類制造商

1N4150

SiliconPlanarDiodes

UltrafastRecoveryRectifierDiodes Features Veryhighswitchingspeed Lowjunctioncapacitance Lowleakagecurrent ComplianttoRoHS,REACH, ConflictMinerals1) TypicalApplications Signalprocessing, High-speedswitching Commercialgrade1) MechanicalDa

Diotec

Diotec Semiconductor

1N4150

DiodeData

NSCNational Semiconductor (TI)

美國國家半導體美國國家半導體公司

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MODULE
2050
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50000
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更多JANT1N4150供應商 更新時間2025-1-14 16:16:00

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