JANSR2N7666T1中文資料英飛凌數(shù)據(jù)手冊(cè)PDF規(guī)格書

Features

? Single event effect (SEE) hardened

(up to LET of 90.5 MeV·cm2/mg)

? Low RDS(on)

? Improved SOA for linear mode operation

? Fast switching

? Low total gate charge

? Simple drive requirements

? Hermetically sealed

? Electrically isolated

? Ceramic eyelets

? Light weight

? ESD rating: Class 3B per MIL-STD-750, Method 1020

Potential Applications

? DC-DC converter

? Motor drives

? Power distribution

? Latching current limiter

Description

IR HiRel R9 technology provides superior power MOSFETs for space applications. This family of p-channel

MOSFETs are the first radiation hardened devices that are based on a superjunction technology. These devices

have improved immunity to Single Event Effect (SEE) and have been characterized for useful performance with

Linear Energy Transfer (LET) up to 90.5 MeV·cm2/mg. Their combination of low RDS(on) and improved SOA allows

for better performance in applications such as Latching Current Limiters (LCL), Solid-State Power Controllers

(SSPC) or DC-DC converters. These devices retain all of the well-established advantages of MOSFETs such as

voltage control, fast switching and temperature stability of electrical parameters.