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JANSG2N7269U中文資料IRF數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)
廠商型號(hào) |
JANSG2N7269U |
功能描述 | Radiation Hardened Power MOSFET Surface Mount (SMD-1) 200V, 26A, N-channel, Rad Hard HEXFET? Technology |
文件大小 |
1.6901 Mbytes |
頁(yè)面數(shù)量 |
13 頁(yè) |
生產(chǎn)廠商 | International Rectifier |
企業(yè)簡(jiǎn)稱 |
IRF |
中文名稱 | International Rectifier官網(wǎng) |
原廠標(biāo)識(shí) | |
數(shù)據(jù)手冊(cè) | |
更新時(shí)間 | 2025-1-13 17:56:00 |
JANSG2N7269U規(guī)格書(shū)詳情
Features
? Single event effect (SEE) hardened
? Low RDS(on)
? Low total gate charge
? Simple drive requirements
? Hermetically sealed
? Electrically isolated
? Ceramic eyelets
? Light weight
? Surface Mount
? ESD rating: Class 3A per MIL-STD-750, Method 1020
Potential Applications
? DC-DC converter
? Motor drives
Description
IR HiRel rad hard HEXFET technology provides high performance power MOSFETs for space applications. This
technology has over a decade of proven performance and reliability in satellite applications. These devices have
been characterized for both Total Dose and Single Event Effects (SEE). The combination of low RDS(on) and low
gate charge reduces the power losses in switching applications such as DC to DC converters and motor control.
These devices retain all of the well-established advantages of MOSFETs such as voltage control, fast switching
and temperature stability of electrical parameters.
產(chǎn)品屬性
- 型號(hào):
JANSG2N7269U
- 制造商:
International Rectifier
- 功能描述:
HIREL HEXFET RHD QPL - Bulk