首頁(yè) >JANS2N6851>規(guī)格書(shū)列表
零件編號(hào) | 下載&訂購(gòu) | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
JANS2N6851 | HEXFET TRANSISTORS THRU-HOLE (TO-205AF) 200V,P-CHANNEL TheHEXFET?technologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylowon-stateresistancecombinedwithhightransconductance.TheHEXFET | IRF International Rectifier | IRF | |
P-ChannelMOSFETinaHermeticallysealedTO39MetalPackage | SEME-LAB Seme LAB | SEME-LAB | ||
HEXFETTRANSISTORSTHRU-HOLE(TO-205AF) 200V,P-CHANNEL TheHEXFET?technologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylowon-stateresistancecombinedwithhightransconductance.TheHEXFET | IRF International Rectifier | IRF | ||
POWERMOSFETP-CHANNEL(BVdss=-200V,Rds(on)=0.80ohm,Id=-4.0A) 200V,P-CHANNEL TheHEXFET?technologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylowon-stateresistancecombinedwithhightransconductance.TheHEXFET | IRF International Rectifier | IRF | ||
RepetitiveAvalancheRatings | IRF International Rectifier | IRF | ||
REPETITIVEAVALANCHEANDdv/dtRATEDHEXFETTRANSISTORSSURFACEMOUNT(LCC-18) BVDSS-200V RDS(on)0.80? ID-4.0A Theleadlesschipcarrier(LCC)packagerepresentsthelogicalnextstepinthecontinualevolutionofsurfacemounttechnology.DesingedtobeaclosereplacementfortheTO-39package,theLCCwillgivedesignerstheextraflexibilitytheyneedt | IRF International Rectifier | IRF | ||
HEXFETTRANSISTORSTHRU-HOLE(TO-205AF) 200V,P-CHANNEL TheHEXFET?technologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylowon-stateresistancecombinedwithhightransconductance.TheHEXFET | IRF International Rectifier | IRF | ||
POWERMOSFETP-CHANNEL(BVdss=-200V,Rds(on)=0.80ohm,Id=-4.0A) 200V,P-CHANNEL TheHEXFET?technologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylowon-stateresistancecombinedwithhightransconductance.TheHEXFET | IRF International Rectifier | IRF | ||
REPETITIVEAVALANCHEANDdv/dtRATEDHEXFETTRANSISTORSSURFACEMOUNT(LCC-18) BVDSS-200V RDS(on)0.80? ID-4.0A Theleadlesschipcarrier(LCC)packagerepresentsthelogicalnextstepinthecontinualevolutionofsurfacemounttechnology.DesingedtobeaclosereplacementfortheTO-39package,theLCCwillgivedesignerstheextraflexibilitytheyneedt | IRF International Rectifier | IRF |
詳細(xì)參數(shù)
- 型號(hào):
JANS2N6851
- 制造商:
International Rectifier
- 功能描述:
HEXFET, -200V, -4.0A, 0.80 OHM - Rail/Tube
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
IRF |
23+ |
NA |
19960 |
只做進(jìn)口原裝,終端工廠免費(fèi)送樣 |
詢價(jià) | ||
IR |
22+ |
CAN3 |
6000 |
終端可免費(fèi)供樣,支持BOM配單 |
詢價(jià) | ||
INFINEON |
23+ |
M-TO205-3 |
14253 |
原包裝原標(biāo)現(xiàn)貨,假一罰十, |
詢價(jià) | ||
IR |
23+ |
CAN3 |
8000 |
只做原裝現(xiàn)貨 |
詢價(jià) | ||
IR |
23+ |
CAN3 |
7000 |
詢價(jià) | |||
IR |
23+ |
TO-39 |
8890 |
價(jià)格優(yōu)勢(shì)/原裝現(xiàn)貨/客戶至上/歡迎廣大客戶來(lái)電查詢 |
詢價(jià) | ||
IR |
TO-39 |
68500 |
一級(jí)代理 原裝正品假一罰十價(jià)格優(yōu)勢(shì)長(zhǎng)期供貨 |
詢價(jià) | |||
IR |
2402+ |
TO-39 |
8324 |
原裝正品!實(shí)單價(jià)優(yōu)! |
詢價(jià) | ||
MICROSEMI/美高森美 |
23+ |
AUCDIP |
10000 |
原廠授權(quán)一級(jí)代理,專業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種 |
詢價(jià) | ||
MICROSEMI/美高森美 |
22+ |
AUCDIP |
11190 |
原裝正品 |
詢價(jià) |
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