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JAN1N2999RB

10 WATT ZENER DIODES

DESCRIPTION Thesehighpower10WZenerdiodesrepresentedbytheJEDECregistered1N2970thru1N3015Band1N3993thru1N4000Aseriesprovidevoltageregulationinaselectionovera3.9Vto200Vbroadrangeofvoltages.Theymaybeoperatedupto10Wwithadequatemountingandheatsinkingwith

MicrosemiMicrosemi Corporation

美高森美美高森美公司

JAN1N2999RB

包裝:散裝 封裝/外殼:DO-203AA,DO-4,接線柱 類別:分立半導體產品 二極管 - 齊納 - 單 描述:ZENER DIODE

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

JAN1N2999RC

10WATTZENERDIODES

DESCRIPTION Thesehighpower10WZenerdiodesrepresentedbytheJEDECregistered1N2970thru1N3015Band1N3993thru1N4000Aseriesprovidevoltageregulationinaselectionovera3.9Vto200Vbroadrangeofvoltages.Theymaybeoperatedupto10Wwithadequatemountingandheatsinkingwith

MicrosemiMicrosemi Corporation

美高森美美高森美公司

JAN1N2999RD

10WATTZENERDIODES

DESCRIPTION Thesehighpower10WZenerdiodesrepresentedbytheJEDECregistered1N2970thru1N3015Band1N3993thru1N4000Aseriesprovidevoltageregulationinaselectionovera3.9Vto200Vbroadrangeofvoltages.Theymaybeoperatedupto10Wwithadequatemountingandheatsinkingwith

MicrosemiMicrosemi Corporation

美高森美美高森美公司

JANTX1N2999

10WATTZENERDIODES

DESCRIPTION Thesehighpower10WZenerdiodesrepresentedbytheJEDECregistered1N2970thru1N3015Band1N3993thru1N4000Aseriesprovidevoltageregulationinaselectionovera3.9Vto200Vbroadrangeofvoltages.Theymaybeoperatedupto10Wwithadequatemountingandheatsinkingwith

MicrosemiMicrosemi Corporation

美高森美美高森美公司

JANTX1N2999A

10WATTZENERDIODES

DESCRIPTION Thesehighpower10WZenerdiodesrepresentedbytheJEDECregistered1N2970thru1N3015Band1N3993thru1N4000Aseriesprovidevoltageregulationinaselectionovera3.9Vto200Vbroadrangeofvoltages.Theymaybeoperatedupto10Wwithadequatemountingandheatsinkingwith

MicrosemiMicrosemi Corporation

美高森美美高森美公司

JANTX1N2999B

10WATTZENERDIODES

DESCRIPTION Thesehighpower10WZenerdiodesrepresentedbytheJEDECregistered1N2970thru1N3015Band1N3993thru1N4000Aseriesprovidevoltageregulationinaselectionovera3.9Vto200Vbroadrangeofvoltages.Theymaybeoperatedupto10Wwithadequatemountingandheatsinkingwith

MicrosemiMicrosemi Corporation

美高森美美高森美公司

JANTX1N2999C

10WATTZENERDIODES

DESCRIPTION Thesehighpower10WZenerdiodesrepresentedbytheJEDECregistered1N2970thru1N3015Band1N3993thru1N4000Aseriesprovidevoltageregulationinaselectionovera3.9Vto200Vbroadrangeofvoltages.Theymaybeoperatedupto10Wwithadequatemountingandheatsinkingwith

MicrosemiMicrosemi Corporation

美高森美美高森美公司

JANTX1N2999D

10WATTZENERDIODES

DESCRIPTION Thesehighpower10WZenerdiodesrepresentedbytheJEDECregistered1N2970thru1N3015Band1N3993thru1N4000Aseriesprovidevoltageregulationinaselectionovera3.9Vto200Vbroadrangeofvoltages.Theymaybeoperatedupto10Wwithadequatemountingandheatsinkingwith

MicrosemiMicrosemi Corporation

美高森美美高森美公司

JANTX1N2999R

10WATTZENERDIODES

DESCRIPTION Thesehighpower10WZenerdiodesrepresentedbytheJEDECregistered1N2970thru1N3015Band1N3993thru1N4000Aseriesprovidevoltageregulationinaselectionovera3.9Vto200Vbroadrangeofvoltages.Theymaybeoperatedupto10Wwithadequatemountingandheatsinkingwith

MicrosemiMicrosemi Corporation

美高森美美高森美公司

JANTX1N2999RA

10WATTZENERDIODES

DESCRIPTION Thesehighpower10WZenerdiodesrepresentedbytheJEDECregistered1N2970thru1N3015Band1N3993thru1N4000Aseriesprovidevoltageregulationinaselectionovera3.9Vto200Vbroadrangeofvoltages.Theymaybeoperatedupto10Wwithadequatemountingandheatsinkingwith

MicrosemiMicrosemi Corporation

美高森美美高森美公司

JANTX1N2999RB

10WATTZENERDIODES

DESCRIPTION Thesehighpower10WZenerdiodesrepresentedbytheJEDECregistered1N2970thru1N3015Band1N3993thru1N4000Aseriesprovidevoltageregulationinaselectionovera3.9Vto200Vbroadrangeofvoltages.Theymaybeoperatedupto10Wwithadequatemountingandheatsinkingwith

MicrosemiMicrosemi Corporation

美高森美美高森美公司

JANTX1N2999RC

10WATTZENERDIODES

DESCRIPTION Thesehighpower10WZenerdiodesrepresentedbytheJEDECregistered1N2970thru1N3015Band1N3993thru1N4000Aseriesprovidevoltageregulationinaselectionovera3.9Vto200Vbroadrangeofvoltages.Theymaybeoperatedupto10Wwithadequatemountingandheatsinkingwith

MicrosemiMicrosemi Corporation

美高森美美高森美公司

JANTX1N2999RD

10WATTZENERDIODES

DESCRIPTION Thesehighpower10WZenerdiodesrepresentedbytheJEDECregistered1N2970thru1N3015Band1N3993thru1N4000Aseriesprovidevoltageregulationinaselectionovera3.9Vto200Vbroadrangeofvoltages.Theymaybeoperatedupto10Wwithadequatemountingandheatsinkingwith

MicrosemiMicrosemi Corporation

美高森美美高森美公司

JANTXV1N2999

10WATTZENERDIODES

DESCRIPTION Thesehighpower10WZenerdiodesrepresentedbytheJEDECregistered1N2970thru1N3015Band1N3993thru1N4000Aseriesprovidevoltageregulationinaselectionovera3.9Vto200Vbroadrangeofvoltages.Theymaybeoperatedupto10Wwithadequatemountingandheatsinkingwith

MicrosemiMicrosemi Corporation

美高森美美高森美公司

JANTXV1N2999A

10WATTZENERDIODES

DESCRIPTION Thesehighpower10WZenerdiodesrepresentedbytheJEDECregistered1N2970thru1N3015Band1N3993thru1N4000Aseriesprovidevoltageregulationinaselectionovera3.9Vto200Vbroadrangeofvoltages.Theymaybeoperatedupto10Wwithadequatemountingandheatsinkingwith

MicrosemiMicrosemi Corporation

美高森美美高森美公司

JANTXV1N2999B

10WATTZENERDIODES

DESCRIPTION Thesehighpower10WZenerdiodesrepresentedbytheJEDECregistered1N2970thru1N3015Band1N3993thru1N4000Aseriesprovidevoltageregulationinaselectionovera3.9Vto200Vbroadrangeofvoltages.Theymaybeoperatedupto10Wwithadequatemountingandheatsinkingwith

MicrosemiMicrosemi Corporation

美高森美美高森美公司

JANTXV1N2999C

10WATTZENERDIODES

DESCRIPTION Thesehighpower10WZenerdiodesrepresentedbytheJEDECregistered1N2970thru1N3015Band1N3993thru1N4000Aseriesprovidevoltageregulationinaselectionovera3.9Vto200Vbroadrangeofvoltages.Theymaybeoperatedupto10Wwithadequatemountingandheatsinkingwith

MicrosemiMicrosemi Corporation

美高森美美高森美公司

JANTXV1N2999D

10WATTZENERDIODES

DESCRIPTION Thesehighpower10WZenerdiodesrepresentedbytheJEDECregistered1N2970thru1N3015Band1N3993thru1N4000Aseriesprovidevoltageregulationinaselectionovera3.9Vto200Vbroadrangeofvoltages.Theymaybeoperatedupto10Wwithadequatemountingandheatsinkingwith

MicrosemiMicrosemi Corporation

美高森美美高森美公司

JANTXV1N2999R

10WATTZENERDIODES

DESCRIPTION Thesehighpower10WZenerdiodesrepresentedbytheJEDECregistered1N2970thru1N3015Band1N3993thru1N4000Aseriesprovidevoltageregulationinaselectionovera3.9Vto200Vbroadrangeofvoltages.Theymaybeoperatedupto10Wwithadequatemountingandheatsinkingwith

MicrosemiMicrosemi Corporation

美高森美美高森美公司

產品屬性

  • 產品編號:

    JAN1N2999RB

  • 制造商:

    Microchip Technology

  • 類別:

    分立半導體產品 > 二極管 - 齊納 - 單

  • 系列:

    Military, MIL-PRF-19500/124

  • 包裝:

    散裝

  • 容差:

    ±5%

  • 工作溫度:

    -65°C ~ 175°C(TJ)

  • 安裝類型:

    接線柱安裝

  • 封裝/外殼:

    DO-203AA,DO-4,接線柱

  • 供應商器件封裝:

    DO-213AA(DO-4)

  • 描述:

    ZENER DIODE

供應商型號品牌批號封裝庫存備注價格
CBY
19
全新原裝 貨期兩周
詢價
MICROSEMI
638
原裝正品
詢價
Microchip
2022+
原廠原包裝
8600
全新原裝 支持表配單 中國著名電子元器件獨立分銷
詢價
IR
22+
6000
終端可免費供樣,支持BOM配單
詢價
IR
23+
8000
只做原裝現貨
詢價
IR
23+
7000
詢價
MSC
23+
65480
詢價
MSC
16+
MODULE
2100
公司大量全新現貨 隨時可以發(fā)貨
詢價
MSC/MOTOROLA
23+
MODULE
10000
原廠授權一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種
詢價
MSC
16+
DO-4
10
原裝現貨假一罰十
詢價
更多JAN1N2999RB供應商 更新時間2024-11-7 16:06:00