IXZR16N60A中文資料IXYS數(shù)據(jù)手冊PDF規(guī)格書

VDSS = 600 V

ID25 = 18 A

RDS(on) ≤ 0.56 ?

PDC = 350

Low Capacitance Z-MOSTM MOSFET Process

Optimized for RF Operation

Ideal for Class C, D, & E Applications

Features

? Isolated Substrate

? high isolation voltage (>2500V)

? excellent thermal transfer

? Increased temperature and power cycling capability

? IXYS advanced Z-MOS process

? Low gate charge and capacitances

? easier to drive

? faster switching

? Low RDS(on)

? Very low insertion inductance (<2nH)

? No beryllium oxide (BeO) or other hazardous materials

Advantages

? High Performance RF Z-MOS?

? Optimized for RF and high speed

? Common Source RF Package

A = Gate Source Drain

B = Drain Source Gate

? Isolated Package, no insulator required