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IXTT1N100

High Voltage MOSFET

N-ChannelEnhancementMode AvalancheEnergyRated Features ●Internationalstandardpackages ●Highvoltage,LowRDS(on)HDMOS?process ●Ruggedpolysilicongatecellstructure ●Fastswitchingtimes Applications ●Switch-modeandresonant-modepowersupplies ●Flybackinverters ●DCcho

IXYS

IXYS Corporation

IXTY1N100P

PolarPowerMOSFET

PolarPowerMOSFET N-ChannelEnhancementMode AvalancheRated Features ?Internationalstandardpackages ?UnclampedInductiveSwitching(UIS)rated ?Lowpackageinductance -easytodriveandtoprotect Advantages ?Easytomount ?Spacesavings ?Highpowerdensity Applications

IXYS

IXYS Corporation

MSAFA1N100D

FastMOSFETDieforImplantableCardioDefibrillatorApplications

DESCRIPTION TheMM196isaMulti-ChipModule,MCM,incorporating6independentMOSFETdieintoaconvenientBGApackage.ThisdeviceisalsoavailableasdiscreteindividualpackagedPowermite3,seeMicrosemidatasheetUPF1N100.Thisdeviceisalsoavailableasbaredie,seeMicrosemidatasheet

MicrosemiMicrosemi Corporation

美高森美美高森美公司

MSAFA1N100D

FastMOSFETDieforImplantableCardioDefibrillatorApplications

MicrosemiMicrosemi Corporation

美高森美美高森美公司

MTB1N100E

TMOSPOWERFET1.0AMPERES1000VOLTS

TMOSPOWERFET1.0AMPERES1000VOLTSRDS(on)=9.0OHM TheD2PAKpackagehasthecapabilityofhousingalargerdiethananyexistingsurfacemountpackagewhichallowsittobeusedinapplicationsthatrequiretheuseofsurfacemountcomponentswithhigherpowerandlowerRDS(on)capabilit

Motorola

Motorola, Inc

MTM1N100

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=1A@TC=25℃ ·DrainSourceVoltage-VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=10Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

MTP1N100

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=1A@TC=25℃ ·DrainSourceVoltage-VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=10Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

MTP1N100E

N-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=1A@TC=25℃ ·DrainSourceVoltage-VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=9mΩ(Max)@VGS=10V APPLICATIONS ·DC-DCConverters ·ACandDCmotorcontrols ·LaserDrivers

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

MTP1N100E

PowerFieldEffectTransistor

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MTP1N100E

TMOSPOWERFET1.0AMPERES1000VOLTSRDS(on)=9.0OHM

TMOSE-FETPowerFieldEffectTransistor N–ChannelEnhancement–ModeSiliconGate ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage–blockingcapabilitywithoutdegradingperformanceovertime.Inaddition,thisadvancedTMOSE–FETisdesignedtowithstandhi

Motorola

Motorola, Inc

OM1N100SA

POWERMOSFETINHERMETICISOLATEDJEDECPACKAGE

etc2List of Unclassifed Manufacturers

etc未分類制造商etc2未分類制造商

OM1N100ST

POWERMOSFETINHERMETICISOLATEDJEDECPACKAGE

etc2List of Unclassifed Manufacturers

etc未分類制造商etc2未分類制造商

T1N100DL

TmaxMoldedCaseCircuitBreakers

ABBabb

ABB集團(tuán)ABB（中國）有限公司

T1N100TL

TmaxMoldedCaseCircuitBreakers

ABBabb

ABB集團(tuán)ABB（中國）有限公司

UPF1N100

SURFACEMOUNTN.CHANNELMOSFET

Description ThisdeviceisanN-Channelenhancementmode,highdensityMOSFET.Itispassivatedwith4um(40kA)ofoxynitride,andsuppliedinathreeleadedpackage. Features ?RuggedPOWERMITE3?SurfaceMountPackage ?LowOn-StateResistance ?AvalancheandSurgeRated ?HighFrequency

MicrosemiMicrosemi Corporation

美高森美美高森美公司

詳細(xì)參數(shù)

  • 型號：

    IXTT1N100

  • 功能描述：

    MOSFET 1 Amps 1000V

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號品牌批號封裝庫存備注價格
IXYS
24+
TO-268
8866
詢價
IXYS
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
 詢價
IXYS/艾賽斯
23+
TO-268
10000
公司只做原裝正品
 詢價
IXYS
22+
TO2683 D3Pak (2 Leads + Tab) T
9000
原廠渠道,現(xiàn)貨配單
 詢價
IXYS
21+
TO2683 D3Pak (2 Leads + Tab) T
13880
公司只售原裝,支持實(shí)單
 詢價
IXYS/艾賽斯
23+
TO-268
6000
原裝正品，支持實(shí)單
 詢價
IXYS
2022+
TO-268-3,D3Pak(2 引線 + 接片
38550
全新原裝 支持表配單 中國著名電子元器件獨(dú)立分銷
 詢價
IXYS/艾賽斯
22+
TO-268
25000
只做原裝進(jìn)口現(xiàn)貨,專注配單
 詢價
xilinx
22+
TO-268
6800
詢價
xilinx
23+
TO-268
8000
全新原裝
 詢價
更多IXTT1N100供應(yīng)商 更新時間2024-11-16 13:30:00

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