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IXTK62N25

High Current MegaMOSFET

HighCurrentMegaMOS?FET N-ChannelEnhancementMode Features ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?Internationalstandardpackage ?Fastswitchingtimes Applications ?Motorcontrols ?DCchoppers ?Switched-modepowersupplies Adva

IXYS

IXYS Corporation

62N25

HighCurrentMegaMOSFET

HighCurrentMegaMOS?FET N-ChannelEnhancementMode Features ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?Internationalstandardpackage ?Fastswitchingtimes Applications ?Motorcontrols ?DCchoppers ?Switched-modepowersupplies Adva

IXYS

IXYS Corporation

FQA62N25

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=62A@TC=25℃ ·DrainSourceVoltage- :VDSS=250V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=35mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconve

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

FQA62N25C

250VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IXFK62N25

HiPerFETPowerMOSFETsSingleMOSFETDie

HiPerFETPowerMOSFETs SingleMOSFETDie Features ?Internationalstandardpackages ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?UnclampedInductiveSwitching(UIS)rated ?Lowpackageinductance -easytodriveandtoprotect ?Fastintrinsicrectifier Ap

IXYS

IXYS Corporation

IXFK62N25

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=62A@TC=25℃ ·DrainSourceVoltage- :VDSS=250V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=35mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFX62N25

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=62A@TC=25℃ ·DrainSourceVoltage- :VDSS=250V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=35mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconve

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFX62N25

HiPerFETPowerMOSFETsSingleMOSFETDie

HiPerFETPowerMOSFETs SingleMOSFETDie Features ?Internationalstandardpackages ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?UnclampedInductiveSwitching(UIS)rated ?Lowpackageinductance -easytodriveandtoprotect ?Fastintrinsicrectifier Ap

IXYS

IXYS Corporation

詳細(xì)參數(shù)

  • 型號：

    IXTK62N25

  • 功能描述：

    MOSFET 62 Amps 250V 0.035 Rds

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號品牌批號封裝庫存備注價(jià)格
IXYS
24+
TO-264(IXTK)
30000
晶體管-分立半導(dǎo)體產(chǎn)品-原裝正品
 詢價(jià)
IXYS
23+
TO3P
7500
絕對全新原裝!優(yōu)勢供貨渠道!特價(jià)!請放心訂購!
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IXYS
23+
TO3P
9960
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IXYS
24+
原廠封裝
3000
原裝現(xiàn)貨假一罰十
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IXYS
23+
TO-3PL
5000
原裝正品,假一罰十
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IXYS
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
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IXYS
23+
TO-3PL
1500
專做原裝正品,假一罰百!
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IXYS
24+
TO-3PL
2050
公司大量全新原裝 正品 隨時(shí)可以發(fā)貨
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IXYS
24+
TO-3PL
2000
進(jìn)口原裝現(xiàn)貨假一罰十.價(jià)格優(yōu)勢.熱賣中..
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IXYS
1931+
N/A
18
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更多IXTK62N25供應(yīng)商 更新時(shí)間2025-1-17 14:14:00

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