首頁 >IXKN75N60C>規(guī)格書列表
零件編號(hào) | 下載&訂購(gòu) | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
IXKN75N60C | CoolMOS Power MOSFET | IXYS IXYS Corporation | IXYS | |
LowLossDuoPack:IGBTinTRENCHSTOPTMandFieldstoptechnologywithsoft,fastrecoveryantiparallelEmitterControlleddiode | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
600V,75AFieldStopIGBT | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
600V,75AFieldStopIGBT | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
600V,75AFieldStopIGBT | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
600V,75AFieldStopIGBT | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
DiscreteIGBT(High-SpeedVseries)600V/75A | FujiFuji Electric 富士電機(jī)富士電機(jī)株式會(huì)社 | Fuji | ||
DiscreteIGBT(High-SpeedVseries)600V/75A | FujiFuji Electric 富士電機(jī)富士電機(jī)株式會(huì)社 | Fuji | ||
600V,75AFieldStopIGBT | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
LowLossIGBT:IGBTinTRENCHSTOP??andFieldstoptechnology | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
LowLossIGBTinTrenchStopandFieldstoptechnology | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
LowLossIGBTinTrenchandFieldstoptechnology | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
IGBT DESCRIPTION ·LowSwitchingLosses ·LowVCE(ON) ·UltraLowLeakageCurrent APPLICATIONS ·IndustrialPowerSupplies ·IndustrialDrives ·SolarInverters | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
TRENCHSTOPTMIGBTcopackedwithRapid1fastandsoftantiparalleldiodeinfullyisolatedpackage | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
LowLossDuoPack:IGBTinTrenchandFieldstoptechnologywithsoft,fastrecoveryanti-parallelEmConHEdiode LowLossDuoPack:IGBTinTRENCHSTOP?andFieldstoptechnologywithsoft,fastrecoveryanti-parallelEmitterControlledHEdiode ●VerylowVCE(sat)1.5V(typ.) ●MaximumJunctionTemperature175°C ●Shortcircuitwithstandtime5?s ●PositivetemperaturecoefficientinVCE(sat) ●verytigh | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
MaterialContentDataSheet | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
LowLossDuoPack:IGBTinTrenchStopandFieldstoptechnology | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
DesignedforDC/ACconvertersforAutomotiveApplication | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
TrenchgateField-StopIGBT DESCRIPTION ·LowSaturationVoltage:VCE(sat)=2.0V@IC=75A ·HighSpeedSwitching ·LowPowerLoss APPLICATIONS ·IndustrialPowerSupplies ·IndustrialDrives ·SolarInverters | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
CoolMOSPowerMOSFET | IXYS IXYS Corporation | IXYS |
詳細(xì)參數(shù)
- 型號(hào):
IXKN75N60C
- 功能描述:
MOSFET 75 Amps 600V
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶體管極性:
N-Channel
- 汲極/源極擊穿電壓:
650 V
- 閘/源擊穿電壓:
25 V
- 漏極連續(xù)電流:
130 A 電阻汲極/源極
- RDS(導(dǎo)通):
0.014 Ohms
- 配置:
Single
- 安裝風(fēng)格:
Through Hole
- 封裝/箱體:
Max247
- 封裝:
Tube
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
IXYS |
24+ |
SOT-227B |
30000 |
晶體管-分立半導(dǎo)體產(chǎn)品-原裝正品 |
詢價(jià) | ||
IXYS |
19+/20+ |
SOT-227B |
178 |
主打產(chǎn)品價(jià)格優(yōu)惠.全新原裝正品 |
詢價(jià) | ||
德國(guó)IXYS艾塞斯 |
23+ |
MOUDLE |
12000 |
原裝正品假一罰十支持實(shí)單 |
詢價(jià) | ||
IXYS |
23+ |
模塊 |
3562 |
詢價(jià) | |||
IXYS |
24+ |
120 |
詢價(jià) | ||||
IXYS |
10+ |
主營(yíng)模塊 |
85 |
原裝正品,公司正品供應(yīng) |
詢價(jià) | ||
IXYS |
23+ |
模塊 |
620 |
全新原裝正品,量大可訂貨!可開17%增值票!價(jià)格優(yōu)勢(shì)! |
詢價(jià) | ||
IXYS |
23+ |
原廠原裝 |
1003 |
全新原裝現(xiàn)貨 |
詢價(jià) | ||
IXYS |
23+ |
模塊 |
5000 |
原裝正品,假一罰十 |
詢價(jià) | ||
IXYS |
23+ |
NA |
19960 |
只做進(jìn)口原裝,終端工廠免費(fèi)送樣 |
詢價(jià) |
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