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25N90

HiPerFETPowerMOSFETs

HiPerFET?PowerMOSFETs SingleMOSFETDie Features ?Internationalstandardpackages ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?UnclampedInductiveSwitching(UIS)rated ?Lowpackageinductance -easytodriveandtoprotect ?Fastintrinsicrectifier Appl

IXYS

IXYS Corporation

IXFK25N90

HiPerFETPowerMOSFETs

HiPerFET?PowerMOSFETs SingleMOSFETDie Features ?Internationalstandardpackages ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?UnclampedInductiveSwitching(UIS)rated ?Lowpackageinductance -easytodriveandtoprotect ?Fastintrinsicrectifier Appl

IXYS

IXYS Corporation

IXFK25N90

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=25A@TC=25℃ ·DrainSourceVoltage- :VDSS=900V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.3Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFN25N90

HiPerFETPowerMOSFETsSingleDieMOSFET

N-ChannelEnhancementModeAvalancheRated,Highdv/dt,LowtrrFastIntrinsicDiode Features ●Internationalstandardpackage ●miniBLOC,withAluminiumnitrideisolation ●LowRDS(ON)HDMOSTMprocess ●AvalancheRated ●Lowpackageinductance ●Fastintrinsicdiode Advantages ●Lowgate

IXYS

IXYS Corporation

IXFN25N90

HiPerFETPowerMOSFETsSingleDieMOSFET

N-ChannelEnhancementModeAvalancheRated,Highdv/dt,LowtrrFastIntrinsicDiode Features ●Internationalstandardpackage ●miniBLOC,withAluminiumnitrideisolation ●LowRDS(ON)HDMOSTMprocess ●AvalancheRated ●Lowpackageinductance ●Fastintrinsicdiode Advantages ●Lowgate

IXYS

IXYS Corporation

IXFN-25N90

HiPerFETTMPowerMOSFETsSingleDieMOSFET

IXYS

IXYS Corporation

IXFX25N90

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=25A@TC=25℃ ·DrainSourceVoltage- :VDSS=900V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.33Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCcon

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFX25N90

HiPerFETPowerMOSFETs

HiPerFET?PowerMOSFETs SingleMOSFETDie Features ?Internationalstandardpackages ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?UnclampedInductiveSwitching(UIS)rated ?Lowpackageinductance -easytodriveandtoprotect ?Fastintrinsicrectifier Appl

IXYS

IXYS Corporation

詳細(xì)參數(shù)

  • 型號(hào)：

    IXGH25N90

  • 功能描述：

    TRANSISTOR | IGBT | N-CHAN | 900V V(BR)CES | 50A I(C) | TO-247

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
IXYS
24+
TO-247
2100
公司大量全新現(xiàn)貨 隨時(shí)可以發(fā)貨
 詢價(jià)
IXYS
24+
TO-247
1300
詢價(jià)
IXYS
23+
TO-3P
5000
原裝正品,假一罰十
 詢價(jià)
IXYS/艾賽斯
23+
TO-247
10000
原廠授權(quán)一級(jí)代理,專業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種
 詢價(jià)
IXYS
23+
TO-3P
67792
##公司主營(yíng)品牌長(zhǎng)期供應(yīng)100%原裝現(xiàn)貨可含稅提供技術(shù)
 詢價(jià)
IXYS
23+
TO-247
8000
只做原裝現(xiàn)貨
 詢價(jià)
IXYS
23+
TO-247
7000
詢價(jià)
24+
8866
詢價(jià)
IXYS
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
 詢價(jià)
IXYS/艾賽斯
24+
TO247
58000
全新原廠原裝正品現(xiàn)貨,可提供技術(shù)支持、樣品免費(fèi)!
 詢價(jià)
更多IXGH25N90供應(yīng)商 更新時(shí)間2025-2-22 14:22:00

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