首頁 >IXGH24N60B>規(guī)格書列表
零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
IXGH24N60B | HiPerFAST IGBT Features ?InternationalstandardpackagesJEDECTO-247AD ?HighfrequencyIGBT ?Highcurrenthandlingcapability ?3rdgenerationHDMOS?process ?MOSGateturn-on -drivesimplicity Applications ?ACmotorspeedcontrol ?DCservoandrobotdrives ?DCchoppers | IXYS IXYS Corporation | IXYS | |
IXGH24N60B | HiPerFAST IGBT Features ?InternationalstandardpackagesJEDECTO-247AD ?HighfrequencyIGBT ?Highcurrenthandlingcapability ?3rdgenerationHDMOS?process ?MOSGateturn-on -drivesimplicity Applications ?ACmotorspeedcontrol ?DCservoandrobotdrives ?DCchoppers | IXYS IXYS Corporation | IXYS | |
IXGH24N60B | 包裝:管件 封裝/外殼:TO-247-3 類別:分立半導(dǎo)體產(chǎn)品 晶體管 - UGBT、MOSFET - 單 描述:IGBT 600V 48A 150W TO247AD | IXYS IXYS Corporation | IXYS | |
HiPerFAST IGBT with Diode Features ?HighfrequencyIGBTandantiparallelFREDinonepackage ?Highcurrenthandlingcapability ?3rdgenerationHDMOSTMprocess ?MOSGateturn-on -drivesimplicity Applications ?ACmotorspeedcontrol ?DCservoandrobotdrives ?DCchoppers ?Uninterruptiblepowersuppli | IXYS IXYS Corporation | IXYS | ||
包裝:管件 封裝/外殼:TO-247-3 類別:分立半導(dǎo)體產(chǎn)品 晶體管 - UGBT、MOSFET - 單 描述:IGBT 600V 48A 150W TO247AD | IXYS IXYS Corporation | IXYS | ||
HiPerFASTIGBTLightspeedSeries Features ?InternationalstandardpackagesJEDECTO-247andsurfacemountableTO-268 ?HighfrequencyIGBT ?Highcurrenthandlingcapability ?LatestgenerationHDMOSTMprocess ?MOSGateturn-on -drivesimplicity Applications ?PFCcircuits ?Uninterruptiblepowe | IXYS IXYS Corporation | IXYS | ||
HiPerFASTIGBTLightspeedSeries | IXYS IXYS Corporation | IXYS | ||
HiPerFASTTMIGBTISOPLUS247TM(ElectricallyIsolatedBackSurface) | IXYS IXYS Corporation | IXYS | ||
HiPerFASTIGBTLightspeedSeries Features ?InternationalstandardpackagesJEDECTO-247andsurfacemountableTO-268 ?HighfrequencyIGBT ?Highcurrenthandlingcapability ?LatestgenerationHDMOSTMprocess ?MOSGateturn-on -drivesimplicity Applications ?PFCcircuits ?Uninterruptiblepowe | IXYS IXYS Corporation | IXYS | ||
IGBT DESCRIPTION ·LowVCE(ON)andSwitchingLosses ·HighSpeedSwitching ·LowPowerLoss APPLICATIONS ·ACmotorspeedcontro ·Uninterruptiblepowersupplies(UPS) ·DCchoppers | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
HiPerFASTIGBT Features ?InternationalstandardpackageJEDECTO-247AD ?HighfrequencyIGBTwithguaranteedShortCircuitSOAcapability ?2ndgenerationHDMOSTMprocess ?LowVCE(sat) -forlowon-stateconductionlosses ?MOSGateturn-on -drivesimplicity Applications ? | IXYS IXYS Corporation | IXYS | ||
HiPerFASTIGBT Features ?InternationalstandardpackageJEDECTO-247AD ?HighfrequencyIGBTwithguaranteedShortCircuitSOAcapability ?2ndgenerationHDMOSTMprocess ?LowVCE(sat) -forlowon-stateconductionlosses ?MOSGateturn-on -drivesimplicity Applications ? | IXYS IXYS Corporation | IXYS | ||
HighSpeedIGBT VCES=600V IC25=48A VCE(sat)=2.5V tfityp=170ns Features Internationalstandardpackages GuaranteedShortCircuitSOAcapability LowVCE(sat) -forlowon-stateconductionlosses Highcurrenthandlingcapability MOSGateturn-on -drivesimplic | IXYS IXYS Corporation | IXYS | ||
HighSpeedIGBT | IXYS IXYS Corporation | IXYS | ||
HighSpeedIGBT VCES=600V IC25=48A VCE(sat)=2.5V tfityp=170ns Features Internationalstandardpackages GuaranteedShortCircuitSOAcapability LowVCE(sat) -forlowon-stateconductionlosses Highcurrenthandlingcapability MOSGateturn-on -drivesimplic | IXYS IXYS Corporation | IXYS | ||
CoolMOSPowerTransistor | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
CoolMOSTMPowerTransistorFeaturesExtremedv/dtratedHighpeakcurrentcapability Features ?Intrinsicfast-recoverybodydiode ?Extremelylowreverserecoverycharge ?Ultralowgatecharge ?Extremedv/dtrated ?Highpeakcurrentcapability ?QualifiedforindustrialgradeapplicationsaccordingtoJEDEC1) ?CoolMOSCFDdesignedfor ?SoftswitchingPWMStages ?LC | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
N-ChannelMOSFETTransistor ?DESCRIPTION ?Ultralowgatecharge ?Highpeakcurrentcapability ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤0.185? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
N-ChannelMOSFETTransistor ?DESCRITION ?Highpeakcurrentcapability ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤185m? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
CoolMOSPowerTransistor Features ?Intrinsicfast-recoverybodydiode ?Extremelylowreverserecoverycharge ?Ultralowgatecharge ?Extremedv/dtrated ?Highpeakcurrentcapability ?QualifiedforindustrialgradeapplicationsaccordingtoJEDEC1) ?CoolMOSCFDdesignedfor ?SoftswitchingPWMStages ?LCD | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon |
產(chǎn)品屬性
- 產(chǎn)品編號:
IXGH24N60B
- 制造商:
IXYS
- 類別:
分立半導(dǎo)體產(chǎn)品 > 晶體管 - UGBT、MOSFET - 單
- 系列:
HiPerFAST?
- 包裝:
管件
- 不同?Vge、Ic 時?Vce(on)(最大值):
2.3V @ 15V,24A
- 開關(guān)能量:
600μJ(開),800μJ(關(guān))
- 輸入類型:
標(biāo)準(zhǔn)
- 25°C 時 Td(開/關(guān))值:
25ns/150ns
- 測試條件:
480V,24A,10 歐姆,15V
- 工作溫度:
-55°C ~ 150°C(TJ)
- 安裝類型:
通孔
- 封裝/外殼:
TO-247-3
- 供應(yīng)商器件封裝:
TO-247AD
- 描述:
IGBT 600V 48A 150W TO247AD
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
IXYS |
9748 |
TO220大 |
1145 |
全新原裝現(xiàn)貨100真實(shí)自己公司 |
詢價(jià) | ||
IXYS |
24+ |
TO-247AD |
32 |
詢價(jià) | |||
IXY |
13+ |
TO-247 |
2096 |
原裝分銷 |
詢價(jià) | ||
IXYS |
23+ |
NA |
19960 |
只做進(jìn)口原裝,終端工廠免費(fèi)送樣 |
詢價(jià) | ||
IXYSCORPORATION |
新 |
7 |
全新原裝 貨期兩周 |
詢價(jià) | |||
IXYS |
2020+ |
TO-247 |
80000 |
只做自己庫存,全新原裝進(jìn)口正品假一賠百,可開13%增 |
詢價(jià) | ||
IXYS |
24+ |
TO-247 |
2050 |
公司大量全新原裝 正品 隨時可以發(fā)貨 |
詢價(jià) | ||
IXYS |
24+ |
TO-247 |
1298 |
詢價(jià) | |||
IXYS |
1503+ |
TO-247 |
3000 |
就找我吧!--邀您體驗(yàn)愉快問購元件! |
詢價(jià) | ||
IXYS/艾賽斯 |
23+ |
TO247 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價(jià) |
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