零件編號 | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
---|---|---|---|---|
IXFQ24N50 | isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent-ID=24A@TC=25℃ ·DrainSourceVoltage-VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=270mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | |
PolarP2 HiperFET Power MOSFET N-ChannelEnhancementMode AvalancheRated FastIntrinsicDiode Features AvalancheRated FastIntrinsicDiode Dynamicdv/dtRated LowPackageInductance Advantages HighPowerDensity EasytoMount SpaceSavings Applications Switch-ModeandResonant-Mode | IXYS IXYS Corporation | IXYS | ||
Package:TO-3P-3,SC-65-3;包裝:盒 類別:分立半導體產(chǎn)品 晶體管 - FET,MOSFET - 單個 描述:MOSFET N-CH 500V 24A TO3P | IXYS IXYS Corporation | IXYS | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=24A@TC=25℃ ·DrainSourceVoltage-VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=250mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
HiPerFETPowerMOSFETsISOPLUS247(ElectricallyIsolatedBackSurface) (ElectricallyIsolatedBackSurface) N-ChannelEnhancementModeHighdV/dt,Lowtrr,HDMOS?Family Features ?SiliconchiponDirect-Copper-Bondsubstrate -Highpowerdissipation -Isolatedmountingsurface -2500Velectricalisolation ?Lowdraintotabcapacitance( | IXYS IXYS Corporation | IXYS | ||
HiPerFETPowerMOSFETsISOPLUS247(ElectricallyIsolatedBackSurface) (ElectricallyIsolatedBackSurface) N-ChannelEnhancementModeHighdV/dt,Lowtrr,HDMOS?Family Features SiliconchiponDirect-Copper-Bondsubstrate -Highpowerdissipation -Isolatedmountingsurface -2500Velectricalisolation Lowdraintotabcapacitance( | IXYS IXYS Corporation | IXYS | ||
HiPerFETPowerMOSFETs HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications. | IXYS IXYS Corporation | IXYS | ||
HiPerFETPowerMOSFETs N-ChannelEnhancementModeAvalancheRated,LowQg,Highdv/dt Features IXYSadvancedlowQgprocess Internationalstandardpackages LowRDS(on) UnclampedInductiveSwitching(UIS)rated Fastswitching MoldingepoxiesmeetUL94V-0flammabilityclassification | IXYS IXYS Corporation | IXYS | ||
HIPERFETPowerMOSFTETs HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications. | IXYS IXYS Corporation | IXYS | ||
HiPerFASTIGBT Features ?InternationalstandardpackagesJEDECTO-247AD ?HighfrequencyIGBT ?Highcurrenthandlingcapability ?3rdgenerationHDMOS?process ?MOSGateturn-on -drivesimplicity Applications ?ACmotorspeedcontrol ?DCservoandrobotdrives ?DCchoppers | IXYS IXYS Corporation | IXYS |
詳細參數(shù)
- 型號:
IXFQ24N50
- 制造商:
IXYS
- 制造商全稱:
IXYS Corporation
- 功能描述:
PolarP2 HiperFET Power MOSFET
供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
IXYS |
1931+ |
N/A |
18 |
加我qq或微信,了解更多詳細信息,體驗一站式購物 |
詢價 | ||
IXYS |
1809+ |
TO-3P |
1675 |
就找我吧!--邀您體驗愉快問購元件! |
詢價 | ||
IXYS |
22+ |
NA |
18 |
加我QQ或微信咨詢更多詳細信息, |
詢價 | ||
IXYS |
22+ |
TO3P3 SC653 |
9000 |
原廠渠道,現(xiàn)貨配單 |
詢價 | ||
IXYS/艾賽斯 |
23+ |
TO-3P |
6000 |
原裝正品,支持實單 |
詢價 | ||
IXYS |
2022+ |
TO-3P-3,SC-65-3 |
38550 |
全新原裝 支持表配單 中國著名電子元器件獨立分銷 |
詢價 | ||
IXYS/艾賽斯 |
22+ |
TO-3P |
25000 |
只做原裝進口現(xiàn)貨,專注配單 |
詢價 | ||
IXYS(艾賽斯) |
23+ |
N/A |
7500 |
IXYS(艾賽斯)全系列在售 |
詢價 | ||
IXYS/艾賽斯 |
23+ |
TO-3 |
65493 |
原裝正品 華強現(xiàn)貨 |
詢價 | ||
IXYS |
25+ |
TO-3P |
12300 |
獨立分銷商 公司只做原裝 誠心經(jīng)營 免費試樣正品保證 |
詢價 |
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