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IXBA16N170AHV

High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor

Features ?HighVoltagePackage ?HighBlockingVoltage ?Anti-ParallelDiode ?LowConductionLosses Advantages ?LowGateDriveRequirement ?HighPowerDensity Applications: ?Switch-ModeandResonant-ModePowerSupplies ?UninterruptiblePowerSupplies(UPS) ?LaserGenerators ?Ca

IXYS

IXYS Corporation

IXBA16N170AHV

包裝：管件 封裝/外殼：TO-263-3，D2Pak（2 引線 + 接片），TO-263AB 類別：分立半導(dǎo)體產(chǎn)品 晶體管 - UGBT、MOSFET - 單 描述：REVERSE CONDUCTING IGBT

IXYS

IXYS Corporation

IXBA16N170AHV-TRL

包裝：卷帶（TR） 封裝/外殼：TO-263-3，D2Pak（2 引線 + 接片），TO-263AB 類別：分立半導(dǎo)體產(chǎn)品 晶體管 - UGBT、MOSFET - 單 描述：DISC IGBT BIMOSFET-HIGH VOLT TO-

IXYS

IXYS Corporation

IXBH16N170

HighVoltage,HighGainBIMOSFETTMMonolithicBipolarMOSTransistor

Features ?HighBlockingVoltage ?JEDECTO-268surfaceandJEDECTO-247AD ?Lowconductionlosses ?Highcurrenthandlingcapability ?MOSGateturn-on -drivesimplicity ?MoldingepoxiesmeetUL94V-0 flammabilityclassification Applications ?ACmotorspeedcontrol ?Uninter

IXYS

IXYS Corporation

IXBH16N170A

HighVoltage,HighGainBIMOSFETMonolithicBipolarMOSTransistor

Features ?Monolithicfastreversediode ?HighBlockingVoltage ?JEDECTO-268surfacemountandJEDECTO-247ADpackages ?Lowswitchinglosses ?Highcurrenthandlingcapability ?MOSGateturn-on -drivesimplicity ?MoldingepoxiesmeetUL94V-0 flammabilityclassification Appl

IXYS

IXYS Corporation

IXBT16N170

HighVoltage,HighGainBIMOSFETTMMonolithicBipolarMOSTransistor

Features ?HighBlockingVoltage ?JEDECTO-268surfaceandJEDECTO-247AD ?Lowconductionlosses ?Highcurrenthandlingcapability ?MOSGateturn-on -drivesimplicity ?MoldingepoxiesmeetUL94V-0 flammabilityclassification Applications ?ACmotorspeedcontrol ?Uninter

IXYS

IXYS Corporation

IXBT16N170A

HighVoltage,HighGainBIMOSFETMonolithicBipolarMOSTransistor

Features ?Monolithicfastreversediode ?HighBlockingVoltage ?JEDECTO-268surfacemountandJEDECTO-247ADpackages ?Lowswitchinglosses ?Highcurrenthandlingcapability ?MOSGateturn-on -drivesimplicity ?MoldingepoxiesmeetUL94V-0 flammabilityclassification Appl

IXYS

IXYS Corporation

IXBT16N170AHV

HighVoltage,HighGainBIMOSFETTMMonolithicBipolarMOSTransistor

Features ?HighVoltagePackage ?HighBlockingVoltage ?Anti-ParallelDiode ?LowConductionLosses Advantages ?LowGateDriveRequirement ?HighPowerDensity Applications: ?Switch-ModeandResonant-ModePowerSupplies ?UninterruptiblePowerSupplies(UPS) ?LaserGenerators ?Ca

IXYS

IXYS Corporation

IXGH16N170

HighVoltageIGBT

HighVoltageIGBT Features ?Internationalstandardpackages JEDECTO-268andJEDECTO-247AD ?Highcurrenthandlingcapability ?MOSGateturn-on -drivesimplicity ?RuggedNPTstructure ?MoldingepoxiesmeetUL94V-0flammabilityclassification Applications ?Capacitordischa

IXYS

IXYS Corporation

IXGH16N170A

HighVoltageIGBT

Features ?Highblockingvoltage ?Highcurrenthandlingcapability ?MOSGateturn-on-drivesimplicity ?RuggedNPTstructure ?MoldingepoxiesmeetUL94V-0flammabilityclassification ?SONIC-FRDTMfastrecoverycopackdiode ?InternationalstandardpackagesJEDECTO-268andJEDECTO-

IXYS

IXYS Corporation

IXGT16N170

HighVoltageIGBT

HighVoltageIGBT Features ?Internationalstandardpackages JEDECTO-268andJEDECTO-247AD ?Highcurrenthandlingcapability ?MOSGateturn-on -drivesimplicity ?RuggedNPTstructure ?MoldingepoxiesmeetUL94V-0flammabilityclassification Applications ?Capacitordischa

IXYS

IXYS Corporation

IXGT16N170

HighVoltageIGBT

IXYS

IXYS Corporation

IXGT16N170A

HighVoltageIGBT

IXYS

IXYS Corporation

IXGT16N170A

HighVoltageIGBT

Features ?Highblockingvoltage ?Highcurrenthandlingcapability ?MOSGateturn-on-drivesimplicity ?RuggedNPTstructure ?MoldingepoxiesmeetUL94V-0flammabilityclassification ?SONIC-FRDTMfastrecoverycopackdiode ?InternationalstandardpackagesJEDECTO-268andJEDECTO-

IXYS

IXYS Corporation

IXGT16N170A

HighVoltageIGBT

IXYS

IXYS Corporation

IXYH16N170C

HighVoltageXPTIGBT

IXYS

IXYS Corporation

產(chǎn)品屬性

  • 產(chǎn)品編號(hào)：

    IXBA16N170AHV

  • 制造商：

    IXYS

  • 類別：

    分立半導(dǎo)體產(chǎn)品 > 晶體管 - UGBT、MOSFET - 單

  • 系列：

    BIMOSFET?

  • 包裝：

    管件

  • 不同?Vge、Ic 時(shí)?Vce(on)（最大值）：

    6V @ 15V，10A

  • 開(kāi)關(guān)能量：

    2.5mJ（關(guān)）

  • 輸入類型：

    標(biāo)準(zhǔn)

  • 25°C 時(shí) Td（開(kāi)/關(guān)）值：

    15ns/250ns

  • 測(cè)試條件：

    1360V，10A，10 歐姆，15V

  • 工作溫度：

    -55°C ~ 150°C（TJ）

  • 安裝類型：

    表面貼裝型

  • 封裝/外殼：

    TO-263-3，D2Pak（2 引線 + 接片），TO-263AB

  • 供應(yīng)商器件封裝：

    TO-263HV

  • 描述：

    REVERSE CONDUCTING IGBT

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
IXYS
24+
TO-263-3,D2Pak(2 引線 + 接片
30000
晶體管-分立半導(dǎo)體產(chǎn)品-原裝正品
 詢價(jià)
IXYS
2022+
TO-263HV
38550
全新原裝 支持表配單 中國(guó)著名電子元器件獨(dú)立分銷
 詢價(jià)
24+
N/A
75000
一級(jí)代理-主營(yíng)優(yōu)勢(shì)-實(shí)惠價(jià)格-不悔選擇
 詢價(jià)
IXYS/LITTELFUSE
2023
TO-263
5572
原廠代理渠道,正品保障
 詢價(jià)
IXYS
24+
TO-263-3 D?Pak(2 引線 + 接片
9350
獨(dú)立分銷商 公司只做原裝 誠(chéng)心經(jīng)營(yíng) 免費(fèi)試樣正品保證
 詢價(jià)
進(jìn)口原裝
23+
SOP16
1225
專業(yè)優(yōu)勢(shì)供應(yīng)
 詢價(jià)
IXYS
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
 詢價(jià)
IXYS
05+
原廠原裝
4353
只做全新原裝真實(shí)現(xiàn)貨供應(yīng)
 詢價(jià)
IXYSCOR
24+
DIP
25
詢價(jià)
IXYS
2023+
DIP16
80000
一級(jí)代理/分銷渠道價(jià)格優(yōu)勢(shì) 十年芯程一路只做原裝正品
 詢價(jià)
更多IXBA16N170AHV供應(yīng)商 更新時(shí)間2024-11-2 19:34:00

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