ISL71040MRTZ-T7A中文資料瑞薩數(shù)據(jù)手冊PDF規(guī)格書

廠商型號	ISL71040MRTZ-T7A
功能描述	Radiation Tolerant Low-Side GaN FET Driver
絲印標識	71040MRTZ
封裝外殼	TDFN
文件大小	768.83 Kbytes
頁面數(shù)量	24 頁
生產(chǎn)廠商	Renesas Technology Corp
企業(yè)簡稱	RENESAS【瑞薩】
中文名稱	瑞薩科技有限公司官網(wǎng)
原廠標識
數(shù)據(jù)手冊	下載地址一下載地址二到原廠下載
更新時間	2025-1-19 18:01:00

Features

? Wide operating voltage range of 4.5V to 13.2V

? Up to 14.7V logic inputs (regardless of VDD

level)

○ Inverting and non-inverting inputs

? Optimized to drive enhancement mode GaN

FETs

○ Internal 4.5V regulated gate drive voltage

○ Independent outputs for adjustable

turn-on/turn-off speeds

? NiPdAu-Ag Lead finish (Sn-free, Pb-free)

? Moisture Sensitivity Level (MSL) Rating: 1

? Passes NASA Low Outgassing Specifications

? Full military temperature range operation

○ TA = -55°C to +125°C

○ TJ = -55°C to +150°C

? Characterized radiation levels

○ Low Dose Rate (LDR) <0.01rad(Si)/s: 30krad(Si)

○ No SEB/L, VDD = 16.5V: 43MeV?cm2/mg

Applications

? Flyback and forward converters

? Boost and PFC converters

? Secondary synchronous FET drivers