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ISL6613AIBZ集成電路(IC)的柵極驅(qū)動(dòng)器規(guī)格書(shū)PDF中文資料

ISL6613AIBZ
廠商型號(hào)

ISL6613AIBZ

參數(shù)屬性

ISL6613AIBZ 封裝/外殼為8-SOIC(0.154",3.90mm 寬);包裝為卷帶(TR);類(lèi)別為集成電路(IC)的柵極驅(qū)動(dòng)器;產(chǎn)品描述:IC GATE DRVR HALF-BRIDGE 8SOIC

功能描述

Advanced Synchronous Rectified Buck MOSFET Drivers with Pre-POR OVP

封裝外殼

8-SOIC(0.154",3.90mm 寬)

文件大小

305.95 Kbytes

頁(yè)面數(shù)量

12 頁(yè)

生產(chǎn)廠商 Intersil Corporation
企業(yè)簡(jiǎn)稱(chēng)

INTERSIL

中文名稱(chēng)

Intersil Corporation官網(wǎng)

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更新時(shí)間

2025-6-12 17:44:00

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ISL6613AIBZ規(guī)格書(shū)詳情

The ISL6612A and ISL6613A are high frequency MOSFET

drivers specifically designed to drive upper and lower power

N-Channel MOSFETs in a synchronous rectified buck

converter topology. These drivers combined with HIP63xx or

ISL65xx Multi-Phase Buck PWM controllers and N-Channel

MOSFETs form complete core-voltage regulator solutions for

advanced microprocessors.

The ISL6612A drives the upper gate to 12V, while the lower

gate can be independently driven over a range from 5V to

12V. The ISL6613A drives both upper and lower gates over

a range of 5V to 12V. This drive-voltage provides the

flexibility necessary to optimize applications involving

trade-offs between gate charge and conduction losses.

An advanced adaptive zero shoot-through protection is

integrated to prevent both the upper and lower MOSFETs

from conducting simultaneously and to minimize the dead

time. These products add an overvoltage protection feature

operational before VCC exceeds its turn-on threshold, at

which the PHASE node is connected to the gate of the low

side MOSFET (LGATE). The output voltage of the converter

is then limited by the threshold of the low side MOSFET,

which provides some protection to the microprocessor if the

upper MOSFET(s) is shorted during initial startup.

These drivers also feature a three-state PWM input which,

working together with Intersil’s multi-phase PWM controllers,

prevents a negative transient on the output voltage when the

output is shut down. This feature eliminates the Schottky

diode that is used in some systems for protecting the load

from reversed output voltage events.

Features

? Pin-to-pin Compatible with HIP6601 SOIC family

? Dual MOSFET Drives for Synchronous Rectified Bridge

? Advanced Adaptive Zero Shoot-Through Protection

- Body Diode Detection

- Auto-zero of rDS(ON) Conduction Offset Effect

? Adjustable Gate Voltage (5V to 12V) for Optimal Efficiency

? 36V Internal Bootstrap Schottky Diode

? Bootstrap Capacitor Overcharging Prevention

? Supports High Switching Frequency (up to 2MHz)

- 3A Sinking Current Capability

- Fast Rise/Fall Times and Low Propagation Delays

? Three-State PWM Input for Output Stage Shutdown

? Three-State PWM Input Hysteresis for Applications with

Power Sequencing Requirement

? Pre-POR Overvoltage Protection

? VCC Undervoltage Protection

? Expandable Bottom Copper Pad for Enhanced Heat

Sinking

? Dual Flat No-Lead (DFN) Package

- Near Chip-Scale Package Footprint; Improves PCB

Efficiency and Thinner in Profile

? Pb-Free (RoHS Compliant)

Applications

? Core Regulators for Intel? and AMD? Microprocessors

? High Current DC/DC Converters

? High Frequency and High Efficiency VRM and VRD

產(chǎn)品屬性

  • 產(chǎn)品編號(hào):

    ISL6613AIBZ

  • 制造商:

    Renesas Electronics America Inc

  • 類(lèi)別:

    集成電路(IC) > 柵極驅(qū)動(dòng)器

  • 包裝:

    卷帶(TR)

  • 驅(qū)動(dòng)配置:

    半橋

  • 通道類(lèi)型:

    同步

  • 柵極類(lèi)型:

    N 溝道 MOSFET

  • 電壓 - 供電:

    10.8V ~ 13.2V

  • 電流 - 峰值輸出(灌入,拉出):

    1.25A,2A

  • 輸入類(lèi)型:

    非反相

  • 上升/下降時(shí)間(典型值):

    26ns,18ns

  • 工作溫度:

    -40°C ~ 125°C(TJ)

  • 安裝類(lèi)型:

    表面貼裝型

  • 封裝/外殼:

    8-SOIC(0.154",3.90mm 寬)

  • 供應(yīng)商器件封裝:

    8-SOIC

  • 描述:

    IC GATE DRVR HALF-BRIDGE 8SOIC

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INTERSIL
24+
原裝
2300
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INTERSIL
23+
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3200
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Intersil
22+
8SOIC
9000
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Renesas Electronics America In
25+
8-SOIC(0.154 3.90mm 寬)
9350
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Intersil
24+
8-SOIC
65200
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Intersil
25+
8-SOIC
4258
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Intersil
2318+
SOIC-8
6890
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INTERSIL
23+
QFN
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intersil
16+
原廠封裝
10000
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23+
8SOIC
9000
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