首頁(yè) >IS63LV1024L-12BLI>規(guī)格書(shū)列表
零件編號(hào) | 下載&訂購(gòu) | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
IS63LV1024L-12BLI | 128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT | ISSIIntegrated Silicon Solution Inc 北京矽成北京矽成半導(dǎo)體有限公司 | ISSI | |
IS63LV1024L-12BLI | 包裝:托盤(pán) 封裝/外殼:36-TFBGA 類(lèi)別:集成電路(IC) 存儲(chǔ)器 描述:IC SRAM 1MBIT PARALLEL 36MINIBGA | ISSIIntegrated Silicon Solution Inc 北京矽成北京矽成半導(dǎo)體有限公司 | ISSI | |
包裝:托盤(pán) 封裝/外殼:36-TFBGA 類(lèi)別:集成電路(IC) 存儲(chǔ)器 描述:IC SRAM 1MBIT PARALLEL 36MINIBGA | ISSIIntegrated Silicon Solution Inc 北京矽成北京矽成半導(dǎo)體有限公司 | ISSI | ||
128Kx8HIGH-SPEEDCMOSSTATICRAM3.3VREVOLUTIONARYPINOUT | ISSIIntegrated Silicon Solution Inc 北京矽成北京矽成半導(dǎo)體有限公司 | ISSI | ||
128Kx8HIGH-SPEEDCMOSSTATICRAM3.3VREVOLUTIONARYPINOUT DESCRIPTION TheISSIIS63LV1024/IS63LV1024Lisaveryhigh-speed,lowpower,131,072-wordby8-bitCMOSstaticRAMinrevolutionarypinout.TheIS63LV1024/IS63LV1024LisfabricatedusingISSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesignt | ISSIIntegrated Silicon Solution Inc 北京矽成北京矽成半導(dǎo)體有限公司 | ISSI | ||
128Kx8HIGH-SPEEDCMOSSTATICRAM3.3VREVOLUTIONARYPINOUT | ISSIIntegrated Silicon Solution Inc 北京矽成北京矽成半導(dǎo)體有限公司 | ISSI | ||
128Kx8HIGH-SPEEDCMOSSTATICRAM3.3VREVOLUTIONARYPINOUT DESCRIPTION TheISSIIS63LV1024/IS63LV1024Lisaveryhigh-speed,lowpower,131,072-wordby8-bitCMOSstaticRAMinrevolutionarypinout.TheIS63LV1024/IS63LV1024LisfabricatedusingISSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesignt | ISSIIntegrated Silicon Solution Inc 北京矽成北京矽成半導(dǎo)體有限公司 | ISSI | ||
128Kx8HIGH-SPEEDCMOSSTATICRAM3.3VREVOLUTIONARYPINOUT DESCRIPTION TheISSIIS63LV1024/IS63LV1024Lisaveryhigh-speed,lowpower,131,072-wordby8-bitCMOSstaticRAMinrevolutionarypinout.TheIS63LV1024/IS63LV1024LisfabricatedusingISSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesignt | ISSIIntegrated Silicon Solution Inc 北京矽成北京矽成半導(dǎo)體有限公司 | ISSI | ||
128Kx8HIGH-SPEEDCMOSSTATICRAM3.3VREVOLUTIONARYPINOUT | ISSIIntegrated Silicon Solution Inc 北京矽成北京矽成半導(dǎo)體有限公司 | ISSI | ||
128Kx8HIGH-SPEEDCMOSSTATICRAM3.3VREVOLUTIONARYPINOUT DESCRIPTION TheISSIIS63LV1024/IS63LV1024Lisaveryhigh-speed,lowpower,131,072-wordby8-bitCMOSstaticRAMinrevolutionarypinout.TheIS63LV1024/IS63LV1024LisfabricatedusingISSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesignt | ISSIIntegrated Silicon Solution Inc 北京矽成北京矽成半導(dǎo)體有限公司 | ISSI | ||
128Kx8HIGH-SPEEDCMOSSTATICRAM3.3VREVOLUTIONARYPINOUT DESCRIPTION TheISSIIS63LV1024/IS63LV1024Lisaveryhigh-speed,lowpower,131,072-wordby8-bitCMOSstaticRAMinrevolutionarypinout.TheIS63LV1024/IS63LV1024LisfabricatedusingISSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesignt | ISSIIntegrated Silicon Solution Inc 北京矽成北京矽成半導(dǎo)體有限公司 | ISSI | ||
128Kx8HIGH-SPEEDCMOSSTATICRAM3.3VREVOLUTIONARYPINOUT DESCRIPTION TheISSIIS63LV1024/IS63LV1024Lisaveryhigh-speed,lowpower,131,072-wordby8-bitCMOSstaticRAMinrevolutionarypinout.TheIS63LV1024/IS63LV1024LisfabricatedusingISSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesignt | ISSIIntegrated Silicon Solution Inc 北京矽成北京矽成半導(dǎo)體有限公司 | ISSI | ||
128Kx8HIGH-SPEEDCMOSSTATICRAM3.3VREVOLUTIONARYPINOUT | ISSIIntegrated Silicon Solution Inc 北京矽成北京矽成半導(dǎo)體有限公司 | ISSI | ||
128Kx8HIGH-SPEEDCMOSSTATICRAM3.3VREVOLUTIONARYPINOUT | ISSIIntegrated Silicon Solution Inc 北京矽成北京矽成半導(dǎo)體有限公司 | ISSI | ||
128Kx8HIGH-SPEEDCMOSSTATICRAM3.3VREVOLUTIONARYPINOUT DESCRIPTION TheISSIIS63LV1024/IS63LV1024Lisaveryhigh-speed,lowpower,131,072-wordby8-bitCMOSstaticRAMinrevolutionarypinout.TheIS63LV1024/IS63LV1024LisfabricatedusingISSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesignt | ISSIIntegrated Silicon Solution Inc 北京矽成北京矽成半導(dǎo)體有限公司 | ISSI |
產(chǎn)品屬性
- 產(chǎn)品編號(hào):
IS63LV1024L-12BLI
- 制造商:
ISSI, Integrated Silicon Solution Inc
- 類(lèi)別:
集成電路(IC) > 存儲(chǔ)器
- 包裝:
托盤(pán)
- 存儲(chǔ)器類(lèi)型:
易失
- 存儲(chǔ)器格式:
SRAM
- 技術(shù):
SRAM - 異步
- 存儲(chǔ)容量:
1Mb(128K x 8)
- 存儲(chǔ)器接口:
并聯(lián)
- 寫(xiě)周期時(shí)間 - 字,頁(yè):
12ns
- 電壓 - 供電:
3.15V ~ 3.45V
- 工作溫度:
-40°C ~ 85°C(TA)
- 安裝類(lèi)型:
表面貼裝型
- 封裝/外殼:
36-TFBGA
- 供應(yīng)商器件封裝:
36-迷你型BGA(8x10)
- 描述:
IC SRAM 1MBIT PARALLEL 36MINIBGA
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
ISSI |
24+ |
BGA |
23000 |
免費(fèi)送樣原盒原包現(xiàn)貨一手渠道聯(lián)系 |
詢(xún)價(jià) | ||
ISSI |
23+ |
TSOP |
2000 |
特價(jià)庫(kù)存 |
詢(xún)價(jià) | ||
ISSI |
23+ |
36-迷你型BGA(8x10) |
3200 |
專(zhuān)業(yè)分銷(xiāo)產(chǎn)品!原裝正品!價(jià)格優(yōu)勢(shì)! |
詢(xún)價(jià) | ||
ISSI |
2018+ |
BGA(36) |
12000 |
專(zhuān)營(yíng)ISSI進(jìn)口原裝正品假一賠十可開(kāi)17增值稅票 |
詢(xún)價(jià) | ||
ISSI |
1844+ |
BGA(36) |
6528 |
只做原裝正品假一賠十為客戶(hù)做到零風(fēng)險(xiǎn)!! |
詢(xún)價(jià) | ||
ISSI |
2020+ |
BGA(36) |
3850 |
百分百原裝正品 真實(shí)公司現(xiàn)貨庫(kù)存 本公司只做原裝 可 |
詢(xún)價(jià) | ||
ISSI, Integrated Silicon Solut |
21+ |
24-TBGA |
5280 |
進(jìn)口原裝!長(zhǎng)期供應(yīng)!絕對(duì)優(yōu)勢(shì)價(jià)格(誠(chéng)信經(jīng)營(yíng) |
詢(xún)價(jià) | ||
ISSI |
21+ |
65200 |
詢(xún)價(jià) | ||||
ISSI |
23+ |
BGA36 |
90000 |
專(zhuān)營(yíng)進(jìn)口原裝正品假一賠十可開(kāi)增票 |
詢(xún)價(jià) | ||
ISSI |
1931+ |
N/A |
493 |
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詢(xún)價(jià) |
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