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IS63LV1024L-12BLI

128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導(dǎo)體有限公司

IS63LV1024L-12BLI

包裝:托盤(pán) 封裝/外殼:36-TFBGA 類(lèi)別:集成電路(IC) 存儲(chǔ)器 描述:IC SRAM 1MBIT PARALLEL 36MINIBGA

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導(dǎo)體有限公司

IS63LV1024L-12BLI-TR

包裝:托盤(pán) 封裝/外殼:36-TFBGA 類(lèi)別:集成電路(IC) 存儲(chǔ)器 描述:IC SRAM 1MBIT PARALLEL 36MINIBGA

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導(dǎo)體有限公司

IS63LV1024L-12H

128Kx8HIGH-SPEEDCMOSSTATICRAM3.3VREVOLUTIONARYPINOUT

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導(dǎo)體有限公司

IS63LV1024L-12H

128Kx8HIGH-SPEEDCMOSSTATICRAM3.3VREVOLUTIONARYPINOUT

DESCRIPTION TheISSIIS63LV1024/IS63LV1024Lisaveryhigh-speed,lowpower,131,072-wordby8-bitCMOSstaticRAMinrevolutionarypinout.TheIS63LV1024/IS63LV1024LisfabricatedusingISSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesignt

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導(dǎo)體有限公司

IS63LV1024L-12J

128Kx8HIGH-SPEEDCMOSSTATICRAM3.3VREVOLUTIONARYPINOUT

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導(dǎo)體有限公司

IS63LV1024L-12J

128Kx8HIGH-SPEEDCMOSSTATICRAM3.3VREVOLUTIONARYPINOUT

DESCRIPTION TheISSIIS63LV1024/IS63LV1024Lisaveryhigh-speed,lowpower,131,072-wordby8-bitCMOSstaticRAMinrevolutionarypinout.TheIS63LV1024/IS63LV1024LisfabricatedusingISSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesignt

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導(dǎo)體有限公司

IS63LV1024L-12JI

128Kx8HIGH-SPEEDCMOSSTATICRAM3.3VREVOLUTIONARYPINOUT

DESCRIPTION TheISSIIS63LV1024/IS63LV1024Lisaveryhigh-speed,lowpower,131,072-wordby8-bitCMOSstaticRAMinrevolutionarypinout.TheIS63LV1024/IS63LV1024LisfabricatedusingISSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesignt

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導(dǎo)體有限公司

IS63LV1024L-12JL

128Kx8HIGH-SPEEDCMOSSTATICRAM3.3VREVOLUTIONARYPINOUT

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導(dǎo)體有限公司

IS63LV1024L-12K

128Kx8HIGH-SPEEDCMOSSTATICRAM3.3VREVOLUTIONARYPINOUT

DESCRIPTION TheISSIIS63LV1024/IS63LV1024Lisaveryhigh-speed,lowpower,131,072-wordby8-bitCMOSstaticRAMinrevolutionarypinout.TheIS63LV1024/IS63LV1024LisfabricatedusingISSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesignt

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導(dǎo)體有限公司

IS63LV1024L-12KI

128Kx8HIGH-SPEEDCMOSSTATICRAM3.3VREVOLUTIONARYPINOUT

DESCRIPTION TheISSIIS63LV1024/IS63LV1024Lisaveryhigh-speed,lowpower,131,072-wordby8-bitCMOSstaticRAMinrevolutionarypinout.TheIS63LV1024/IS63LV1024LisfabricatedusingISSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesignt

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導(dǎo)體有限公司

IS63LV1024L-12T

128Kx8HIGH-SPEEDCMOSSTATICRAM3.3VREVOLUTIONARYPINOUT

DESCRIPTION TheISSIIS63LV1024/IS63LV1024Lisaveryhigh-speed,lowpower,131,072-wordby8-bitCMOSstaticRAMinrevolutionarypinout.TheIS63LV1024/IS63LV1024LisfabricatedusingISSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesignt

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導(dǎo)體有限公司

IS63LV1024L-12T

128Kx8HIGH-SPEEDCMOSSTATICRAM3.3VREVOLUTIONARYPINOUT

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導(dǎo)體有限公司

IS63LV1024L-12TI

128Kx8HIGH-SPEEDCMOSSTATICRAM3.3VREVOLUTIONARYPINOUT

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導(dǎo)體有限公司

IS63LV1024L-12TI

128Kx8HIGH-SPEEDCMOSSTATICRAM3.3VREVOLUTIONARYPINOUT

DESCRIPTION TheISSIIS63LV1024/IS63LV1024Lisaveryhigh-speed,lowpower,131,072-wordby8-bitCMOSstaticRAMinrevolutionarypinout.TheIS63LV1024/IS63LV1024LisfabricatedusingISSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesignt

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導(dǎo)體有限公司

產(chǎn)品屬性

  • 產(chǎn)品編號(hào):

    IS63LV1024L-12BLI

  • 制造商:

    ISSI, Integrated Silicon Solution Inc

  • 類(lèi)別:

    集成電路(IC) > 存儲(chǔ)器

  • 包裝:

    托盤(pán)

  • 存儲(chǔ)器類(lèi)型:

    易失

  • 存儲(chǔ)器格式:

    SRAM

  • 技術(shù):

    SRAM - 異步

  • 存儲(chǔ)容量:

    1Mb(128K x 8)

  • 存儲(chǔ)器接口:

    并聯(lián)

  • 寫(xiě)周期時(shí)間 - 字,頁(yè):

    12ns

  • 電壓 - 供電:

    3.15V ~ 3.45V

  • 工作溫度:

    -40°C ~ 85°C(TA)

  • 安裝類(lèi)型:

    表面貼裝型

  • 封裝/外殼:

    36-TFBGA

  • 供應(yīng)商器件封裝:

    36-迷你型BGA(8x10)

  • 描述:

    IC SRAM 1MBIT PARALLEL 36MINIBGA

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
ISSI
24+
BGA
23000
免費(fèi)送樣原盒原包現(xiàn)貨一手渠道聯(lián)系
詢(xún)價(jià)
ISSI
23+
TSOP
2000
特價(jià)庫(kù)存
詢(xún)價(jià)
ISSI
23+
36-迷你型BGA(8x10)
3200
專(zhuān)業(yè)分銷(xiāo)產(chǎn)品!原裝正品!價(jià)格優(yōu)勢(shì)!
詢(xún)價(jià)
ISSI
2018+
BGA(36)
12000
專(zhuān)營(yíng)ISSI進(jìn)口原裝正品假一賠十可開(kāi)17增值稅票
詢(xún)價(jià)
ISSI
1844+
BGA(36)
6528
只做原裝正品假一賠十為客戶(hù)做到零風(fēng)險(xiǎn)!!
詢(xún)價(jià)
ISSI
2020+
BGA(36)
3850
百分百原裝正品 真實(shí)公司現(xiàn)貨庫(kù)存 本公司只做原裝 可
詢(xún)價(jià)
ISSI, Integrated Silicon Solut
21+
24-TBGA
5280
進(jìn)口原裝!長(zhǎng)期供應(yīng)!絕對(duì)優(yōu)勢(shì)價(jià)格(誠(chéng)信經(jīng)營(yíng)
詢(xún)價(jià)
ISSI
21+
65200
詢(xún)價(jià)
ISSI
23+
BGA36
90000
專(zhuān)營(yíng)進(jìn)口原裝正品假一賠十可開(kāi)增票
詢(xún)價(jià)
ISSI
1931+
N/A
493
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更多IS63LV1024L-12BLI供應(yīng)商 更新時(shí)間2024-10-31 17:32:00