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IS63LV1024-12KL

128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導(dǎo)體有限公司

IS63LV1024-12KL

包裝:托盤 封裝/外殼:32-BSOJ(0.400",10.16mm 寬) 類別:集成電路(IC) 存儲器 描述:IC SRAM 1MBIT PARALLEL 32SOJ

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導(dǎo)體有限公司

IS63LV1024-12KL-TR

包裝:托盤 封裝/外殼:32-BSOJ(0.400",10.16mm 寬) 類別:集成電路(IC) 存儲器 描述:IC SRAM 1MBIT PARALLEL 32SOJ

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導(dǎo)體有限公司

IC63LV1024-12B

128Kx8HIGH-SPEEDCMOSSTATICRAM3.3VREVOLUTIONARYPINOUT

ICSI

Integrated Circuit Solution Inc

IC63LV1024-12BI

128Kx8HIGH-SPEEDCMOSSTATICRAM3.3VREVOLUTIONARYPINOUT

ICSI

Integrated Circuit Solution Inc

IC63LV1024-12J

128Kx8HIGH-SPEEDCMOSSTATICRAM3.3VREVOLUTIONARYPINOUT

ICSI

Integrated Circuit Solution Inc

IC63LV1024-12JI

128Kx8HIGH-SPEEDCMOSSTATICRAM3.3VREVOLUTIONARYPINOUT

ICSI

Integrated Circuit Solution Inc

IC63LV1024-12K

128Kx8HIGH-SPEEDCMOSSTATICRAM3.3VREVOLUTIONARYPINOUT

ICSI

Integrated Circuit Solution Inc

IC63LV1024-12KI

128Kx8HIGH-SPEEDCMOSSTATICRAM3.3VREVOLUTIONARYPINOUT

ICSI

Integrated Circuit Solution Inc

IC63LV1024-12T

128Kx8HIGH-SPEEDCMOSSTATICRAM3.3VREVOLUTIONARYPINOUT

ICSI

Integrated Circuit Solution Inc

IC63LV1024-12TI

128Kx8HIGH-SPEEDCMOSSTATICRAM3.3VREVOLUTIONARYPINOUT

ICSI

Integrated Circuit Solution Inc

IS63LV1024-12J

128Kx8HIGH-SPEEDCMOSSTATICRAM3.3VREVOLUTIONARYPINOUT

DESCRIPTION TheISSIIS63LV1024/IS63LV1024Lisaveryhigh-speed,lowpower,131,072-wordby8-bitCMOSstaticRAMinrevolutionarypinout.TheIS63LV1024/IS63LV1024LisfabricatedusingISSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesignt

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導(dǎo)體有限公司

IS63LV1024-12J

128Kx8HIGH-SPEEDCMOSSTATICRAM3.3VREVOLUTIONARYPINOUT

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導(dǎo)體有限公司

IS63LV1024-12JI

128Kx8HIGH-SPEEDCMOSSTATICRAM3.3VREVOLUTIONARYPINOUT

DESCRIPTION TheISSIIS63LV1024/IS63LV1024Lisaveryhigh-speed,lowpower,131,072-wordby8-bitCMOSstaticRAMinrevolutionarypinout.TheIS63LV1024/IS63LV1024LisfabricatedusingISSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesignt

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導(dǎo)體有限公司

IS63LV1024-12K

128Kx8HIGH-SPEEDCMOSSTATICRAM3.3VREVOLUTIONARYPINOUT

DESCRIPTION TheISSIIS63LV1024/IS63LV1024Lisaveryhigh-speed,lowpower,131,072-wordby8-bitCMOSstaticRAMinrevolutionarypinout.TheIS63LV1024/IS63LV1024LisfabricatedusingISSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesignt

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導(dǎo)體有限公司

IS63LV1024-12KI

128Kx8HIGH-SPEEDCMOSSTATICRAM3.3VREVOLUTIONARYPINOUT

DESCRIPTION TheISSIIS63LV1024/IS63LV1024Lisaveryhigh-speed,lowpower,131,072-wordby8-bitCMOSstaticRAMinrevolutionarypinout.TheIS63LV1024/IS63LV1024LisfabricatedusingISSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesignt

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導(dǎo)體有限公司

IS63LV1024-12T

128Kx8HIGH-SPEEDCMOSSTATICRAM3.3VREVOLUTIONARYPINOUT

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導(dǎo)體有限公司

IS63LV1024-12T

128Kx8HIGH-SPEEDCMOSSTATICRAM3.3VREVOLUTIONARYPINOUT

DESCRIPTION TheISSIIS63LV1024/IS63LV1024Lisaveryhigh-speed,lowpower,131,072-wordby8-bitCMOSstaticRAMinrevolutionarypinout.TheIS63LV1024/IS63LV1024LisfabricatedusingISSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesignt

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導(dǎo)體有限公司

IS63LV1024-12TI

128Kx8HIGH-SPEEDCMOSSTATICRAM3.3VREVOLUTIONARYPINOUT

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導(dǎo)體有限公司

IS63LV1024-12TI

128Kx8HIGH-SPEEDCMOSSTATICRAM3.3VREVOLUTIONARYPINOUT

DESCRIPTION TheISSIIS63LV1024/IS63LV1024Lisaveryhigh-speed,lowpower,131,072-wordby8-bitCMOSstaticRAMinrevolutionarypinout.TheIS63LV1024/IS63LV1024LisfabricatedusingISSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesignt

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導(dǎo)體有限公司

產(chǎn)品屬性

  • 產(chǎn)品編號:

    IS63LV1024-12KL

  • 制造商:

    ISSI, Integrated Silicon Solution Inc

  • 類別:

    集成電路(IC) > 存儲器

  • 包裝:

    托盤

  • 存儲器類型:

    易失

  • 存儲器格式:

    SRAM

  • 技術(shù):

    SRAM - 異步

  • 存儲容量:

    1Mb(128K x 8)

  • 存儲器接口:

    并聯(lián)

  • 寫周期時間 - 字,頁:

    12ns

  • 電壓 - 供電:

    3V ~ 3.6V

  • 工作溫度:

    0°C ~ 70°C(TA)

  • 安裝類型:

    表面貼裝型

  • 封裝/外殼:

    32-BSOJ(0.400",10.16mm 寬)

  • 供應(yīng)商器件封裝:

    32-SOJ

  • 描述:

    IC SRAM 1MBIT PARALLEL 32SOJ

供應(yīng)商型號品牌批號封裝庫存備注價格
ISSI
23+
32-SOJ
9550
專業(yè)分銷產(chǎn)品!原裝正品!價格優(yōu)勢!
詢價
ISSI
18+
SOJ32
85600
保證進(jìn)口原裝可開17%增值稅發(fā)票
詢價
ISSI
1824+
SOJ
5000
原裝現(xiàn)貨專業(yè)代理,可以代拷程序
詢價
ISSI
19+
9850
公司原裝現(xiàn)貨/隨時可以發(fā)貨
詢價
ISSI
1931+
N/A
493
加我qq或微信,了解更多詳細(xì)信息,體驗一站式購物
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ISSI
2021+
SMD
100500
一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨
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ISSI
20+
32-SOP
546
就找我吧!--邀您體驗愉快問購元件!
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ISN
22+
ORIGINAL
25800
原裝正品,品質(zhì)保證,值得你信賴.
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ISSI
23+
SOJ-32
50000
全新原裝正品現(xiàn)貨,支持訂貨
詢價
ISN
23+
589610
新到現(xiàn)貨 原廠一手貨源 價格秒殺代理!
詢價
更多IS63LV1024-12KL供應(yīng)商 更新時間2024-10-31 16:30:00