DESCRIPTION

The ISSI IS61LV2568 is a very high-speed, low power, 262,144-word by 8-bit CMOS static RAM. The IS61LV2568 is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices.

When CE is HIGH (deselected), the device assumes a standby mode at which the power dissipation can be reduced down to 36mW (max.) with CMOS input levels. The IS61LV2568 operates from a single 3.3V power supply and all inputs are TTL-compatible.

The IS61LV2568 is available in 36-pin 400-mil SOJ, and 44-pin TSOP (Type II) packages.

FEATURES

? High-speed access times: 10 and 12 ns

? High-performance, low-power CMOS process

? Multiple center power and ground pins for greater noise immunity

? Easy memory expansion with CE and OE options

? CE power-down

? Low power: 540 mW @ 10 ns 36 mW standby mode

? TTL compatible inputs and outputs

? Single 3.3V ±10 power supply

? Packages available:

– 36-pin 400-mil SOJ

– 44-pin TSOP (Type II)

IS61LV2568屬于集成電路（IC） > 存儲器。北京矽成半導(dǎo)體有限公司制造生產(chǎn)的IS61LV2568存儲器存儲器是集成電路上用作數(shù)據(jù)存儲設(shè)備的半導(dǎo)體器件。這些器件分為非易失性或易失性兩種，格式包括 CBRAM、DRAM、EEPROM、EERAM、EPROM、閃存、FRAM、NVSRAM、PCM (PRAM)、PSRAM、RAM 和 SRAM。這些器件的存儲容量為 64 b 至 6 Tb 不等，接口有 I2C、MMC、并行、eMMC、串行、單線、SPI、UFS、Xccela 總線和 1-線。