DESCRIPTION

ISSI’s 16Mb Synchronous DRAM IS42S16100C1 is organized as a 524,288-word x 16-bit x 2-bank for improved performance. The synchronous DRAMs achieve high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input.

FEATURES

? Clock frequency: 200, 166, 143 MHz

? Fully synchronous; all signals referenced to a positive clock edge

? Two banks can be operated simultaneously and independently

? Dual internal bank controlled by A11 (bank select)

? Single 3.3V power supply

? LVTTL interface

? Programmable burst length – (1, 2, 4, 8, full page)

? Programmable burst sequence: Sequential/Interleave

? 4096 refresh cycles every 64 ms

? Random column address every clock cycle

? Programmable CAS latency (2, 3 clocks)

? Burst read/write and burst read/single write operations capability

? Burst termination by burst stop and precharge command

? Byte controlled by LDQM and UDQM

? Industrial temperature up to 143 MHz

? Packages 400-mil 50-pin TSOP-II, 60-ball fBGA

? Lead-free package option

IS42S16100C1-7TI屬于集成電路（IC） > 存儲(chǔ)器。北京矽成半導(dǎo)體有限公司制造生產(chǎn)的IS42S16100C1-7TI存儲(chǔ)器存儲(chǔ)器是集成電路上用作數(shù)據(jù)存儲(chǔ)設(shè)備的半導(dǎo)體器件。這些器件分為非易失性或易失性兩種，格式包括 CBRAM、DRAM、EEPROM、EERAM、EPROM、閃存、FRAM、NVSRAM、PCM (PRAM)、PSRAM、RAM 和 SRAM。這些器件的存儲(chǔ)容量為 64 b 至 6 Tb 不等，接口有 I2C、MMC、并行、eMMC、串行、單線、SPI、UFS、Xccela 總線和 1-線。