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IS41LV16105B-60K

1Mx16(16-MBIT)DYNAMICRAMWITHFASTPAGEMODE

DESCRIPTION TheISSIIS41LV16105Bis1,048,576x16-bithigh-performanceCMOSDynamicRandomAccessMemories.FastPageModeallows1,024randomaccesseswithinasinglerowwithaccesscycletimeasshortas20nsper16-bitword.TheByteWritecontrol,ofupperandlowerbyte,makestheIS41LV

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導(dǎo)體有限公司

IS41LV16105B-60KE

1Mx16(16-MBIT)DYNAMICRAMWITHFASTPAGEMODE

DESCRIPTION TheISSIIS41LV16105Bis1,048,576x16-bithigh-performanceCMOSDynamicRandomAccessMemories.FastPageModeallows1,024randomaccesseswithinasinglerowwithaccesscycletimeasshortas20nsper16-bitword.TheByteWritecontrol,ofupperandlowerbyte,makestheIS41LV

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導(dǎo)體有限公司

IS41LV16105B-60KI

1Mx16(16-MBIT)DYNAMICRAMWITHFASTPAGEMODE

DESCRIPTION TheISSIIS41LV16105Bis1,048,576x16-bithigh-performanceCMOSDynamicRandomAccessMemories.FastPageModeallows1,024randomaccesseswithinasinglerowwithaccesscycletimeasshortas20nsper16-bitword.TheByteWritecontrol,ofupperandlowerbyte,makestheIS41LV

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導(dǎo)體有限公司

IS41LV16105B-60KL

1Mx16(16-MBIT)DYNAMICRAMWITHFASTPAGEMODE

DESCRIPTION TheISSIIS41LV16105Bis1,048,576x16-bithigh-performanceCMOSDynamicRandomAccessMemories.FastPageModeallows1,024randomaccesseswithinasinglerowwithaccesscycletimeasshortas20nsper16-bitword.TheByteWritecontrol,ofupperandlowerbyte,makestheIS41LV

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導(dǎo)體有限公司

IS41LV16105B-60KLE

1Mx16(16-MBIT)DYNAMICRAMWITHFASTPAGEMODE

DESCRIPTION TheISSIIS41LV16105Bis1,048,576x16-bithigh-performanceCMOSDynamicRandomAccessMemories.FastPageModeallows1,024randomaccesseswithinasinglerowwithaccesscycletimeasshortas20nsper16-bitword.TheByteWritecontrol,ofupperandlowerbyte,makestheIS41LV

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導(dǎo)體有限公司

IS41LV16105B-60KLI

1Mx16(16-MBIT)DYNAMICRAMWITHFASTPAGEMODE

DESCRIPTION TheISSIIS41LV16105Bis1,048,576x16-bithigh-performanceCMOSDynamicRandomAccessMemories.FastPageModeallows1,024randomaccesseswithinasinglerowwithaccesscycletimeasshortas20nsper16-bitword.TheByteWritecontrol,ofupperandlowerbyte,makestheIS41LV

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導(dǎo)體有限公司

IS41LV16105B-60T

1Mx16(16-MBIT)DYNAMICRAMWITHFASTPAGEMODE

DESCRIPTION TheISSIIS41LV16105Bis1,048,576x16-bithigh-performanceCMOSDynamicRandomAccessMemories.FastPageModeallows1,024randomaccesseswithinasinglerowwithaccesscycletimeasshortas20nsper16-bitword.TheByteWritecontrol,ofupperandlowerbyte,makestheIS41LV

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導(dǎo)體有限公司

IS41LV16105B-60TE

1Mx16(16-MBIT)DYNAMICRAMWITHFASTPAGEMODE

DESCRIPTION TheISSIIS41LV16105Bis1,048,576x16-bithigh-performanceCMOSDynamicRandomAccessMemories.FastPageModeallows1,024randomaccesseswithinasinglerowwithaccesscycletimeasshortas20nsper16-bitword.TheByteWritecontrol,ofupperandlowerbyte,makestheIS41LV

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導(dǎo)體有限公司

IS41LV16105B-60TI

1Mx16(16-MBIT)DYNAMICRAMWITHFASTPAGEMODE

DESCRIPTION TheISSIIS41LV16105Bis1,048,576x16-bithigh-performanceCMOSDynamicRandomAccessMemories.FastPageModeallows1,024randomaccesseswithinasinglerowwithaccesscycletimeasshortas20nsper16-bitword.TheByteWritecontrol,ofupperandlowerbyte,makestheIS41LV

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導(dǎo)體有限公司

IS41LV16105B-60TL

1Mx16(16-MBIT)DYNAMICRAMWITHFASTPAGEMODE

DESCRIPTION TheISSIIS41LV16105Bis1,048,576x16-bithigh-performanceCMOSDynamicRandomAccessMemories.FastPageModeallows1,024randomaccesseswithinasinglerowwithaccesscycletimeasshortas20nsper16-bitword.TheByteWritecontrol,ofupperandlowerbyte,makestheIS41LV

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導(dǎo)體有限公司

IS41LV16105B-60TLE

1Mx16(16-MBIT)DYNAMICRAMWITHFASTPAGEMODE

DESCRIPTION TheISSIIS41LV16105Bis1,048,576x16-bithigh-performanceCMOSDynamicRandomAccessMemories.FastPageModeallows1,024randomaccesseswithinasinglerowwithaccesscycletimeasshortas20nsper16-bitword.TheByteWritecontrol,ofupperandlowerbyte,makestheIS41LV

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導(dǎo)體有限公司

IS41LV16105B-60TLI

1Mx16(16-MBIT)DYNAMICRAMWITHFASTPAGEMODE

DESCRIPTION TheISSIIS41LV16105Bis1,048,576x16-bithigh-performanceCMOSDynamicRandomAccessMemories.FastPageModeallows1,024randomaccesseswithinasinglerowwithaccesscycletimeasshortas20nsper16-bitword.TheByteWritecontrol,ofupperandlowerbyte,makestheIS41LV

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導(dǎo)體有限公司

詳細(xì)參數(shù)

  • 型號(hào):

    IS41LV16105B-60K-TR

  • 功能描述:

    動(dòng)態(tài)隨機(jī)存取存儲(chǔ)器 16M 1Mx16 60ns

  • RoHS:

  • 制造商:

    ISSI

  • 數(shù)據(jù)總線(xiàn)寬度:

    16 bit

  • 組織:

    1 M x 16

  • 封裝/箱體:

    SOJ-42

  • 存儲(chǔ)容量:

    16 MB

  • 訪(fǎng)問(wèn)時(shí)間:

    50 ns

  • 電源電壓-最大:

    7 V

  • 電源電壓-最?。?/span>

    - 1 V

  • 最大工作電流:

    90 mA

  • 最大工作溫度:

    + 85 C

  • 封裝:

    Tube

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
ISSI Integrated Silicon Soluti
22+
44TSOP II
9000
原廠(chǎng)渠道,現(xiàn)貨配單
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ISSI Integrated Silicon Soluti
21+
44TSOP II
13880
公司只售原裝,支持實(shí)單
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ISSI Integrated Silicon Soluti
23+
44TSOP II
9000
原裝正品,支持實(shí)單
詢(xún)價(jià)
ISSI
23+
44-TSOPII
1389
專(zhuān)業(yè)分銷(xiāo)產(chǎn)品!原裝正品!價(jià)格優(yōu)勢(shì)!
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ISSI, Integrated Silicon Solut
21+
44-TSOP II
56200
一級(jí)代理/放心采購(gòu)
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ISSIINTEGRATEDSILICONSOLUTIONI
2021+
SMD
100500
一級(jí)代理專(zhuān)營(yíng)品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,長(zhǎng)期排單到貨
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ISSI
20+
TSOP-44
1001
就找我吧!--邀您體驗(yàn)愉快問(wèn)購(gòu)元件!
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ISSI
23+
TSOP
4718
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ISSI
06+
TSOP44
5
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ISSI, Integrated Silicon Solu
23+
44-TSOP II
7300
專(zhuān)注配單,只做原裝進(jìn)口現(xiàn)貨
詢(xún)價(jià)
更多IS41LV16105B-60K-TR供應(yīng)商 更新時(shí)間2024-11-18 15:31:00