首頁 >IS41LV16100>規(guī)格書列表
| 零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
|---|---|---|---|---|
IS41LV16100 | 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE | ISSIIntegrated Silicon Solution Inc 北京矽成北京矽成半導體有限公司 | ISSI | |
1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION TheISSIIS41C16100andIS41LV16100are1,048,576x16-bithigh-performanceCMOSDynamicRandomAccessMemories.ThesedevicesofferanacceleratedcycleaccesscalledEDOPageMode.EDOPageModeallows1,024randomaccesseswithinasinglerowwithaccesscycletimeasshortas20 | ISSIIntegrated Silicon Solution Inc 北京矽成北京矽成半導體有限公司 | ISSI | ||
1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION TheISSIIS41C16100andIS41LV16100are1,048,576x16-bithigh-performanceCMOSDynamicRandomAccessMemories.ThesedevicesofferanacceleratedcycleaccesscalledEDOPageMode.EDOPageModeallows1,024randomaccesseswithinasinglerowwithaccesscycletimeasshortas20 | ISSIIntegrated Silicon Solution Inc 北京矽成北京矽成半導體有限公司 | ISSI | ||
1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION TheISSIIS41C16100andIS41LV16100are1,048,576x16-bithigh-performanceCMOSDynamicRandomAccessMemories.ThesedevicesofferanacceleratedcycleaccesscalledEDOPageMode.EDOPageModeallows1,024randomaccesseswithinasinglerowwithaccesscycletimeasshortas20 | ISSIIntegrated Silicon Solution Inc 北京矽成北京矽成半導體有限公司 | ISSI | ||
1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION TheISSIIS41C16100andIS41LV16100are1,048,576x16-bithigh-performanceCMOSDynamicRandomAccessMemories.ThesedevicesofferanacceleratedcycleaccesscalledEDOPageMode.EDOPageModeallows1,024randomaccesseswithinasinglerowwithaccesscycletimeasshortas20 | ISSIIntegrated Silicon Solution Inc 北京矽成北京矽成半導體有限公司 | ISSI | ||
1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION TheISSIIS41C16100andIS41LV16100are1,048,576x16-bithigh-performanceCMOSDynamicRandomAccessMemories.ThesedevicesofferanacceleratedcycleaccesscalledEDOPageMode.EDOPageModeallows1,024randomaccesseswithinasinglerowwithaccesscycletimeasshortas20 | ISSIIntegrated Silicon Solution Inc 北京矽成北京矽成半導體有限公司 | ISSI | ||
1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION TheISSIIS41C16100andIS41LV16100are1,048,576x16-bithigh-performanceCMOSDynamicRandomAccessMemories.ThesedevicesofferanacceleratedcycleaccesscalledEDOPageMode.EDOPageModeallows1,024randomaccesseswithinasinglerowwithaccesscycletimeasshortas20 | ISSIIntegrated Silicon Solution Inc 北京矽成北京矽成半導體有限公司 | ISSI | ||
1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION TheISSIIS41C16100andIS41LV16100are1,048,576x16-bithigh-performanceCMOSDynamicRandomAccessMemories.ThesedevicesofferanacceleratedcycleaccesscalledEDOPageMode.EDOPageModeallows1,024randomaccesseswithinasinglerowwithaccesscycletimeasshortas20 | ISSIIntegrated Silicon Solution Inc 北京矽成北京矽成半導體有限公司 | ISSI | ||
1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION TheISSIIS41C16100andIS41LV16100are1,048,576x16-bithigh-performanceCMOSDynamicRandomAccessMemories.ThesedevicesofferanacceleratedcycleaccesscalledEDOPageMode.EDOPageModeallows1,024randomaccesseswithinasinglerowwithaccesscycletimeasshortas20 | ISSIIntegrated Silicon Solution Inc 北京矽成北京矽成半導體有限公司 | ISSI | ||
1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION TheISSIIS41C16100andIS41LV16100are1,048,576x16-bithigh-performanceCMOSDynamicRandomAccessMemories.ThesedevicesofferanacceleratedcycleaccesscalledEDOPageMode.EDOPageModeallows1,024randomaccesseswithinasinglerowwithaccesscycletimeasshortas20 | ISSIIntegrated Silicon Solution Inc 北京矽成北京矽成半導體有限公司 | ISSI | ||
1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION TheISSIIS41C16100andIS41LV16100are1,048,576x16-bithigh-performanceCMOSDynamicRandomAccessMemories.ThesedevicesofferanacceleratedcycleaccesscalledEDOPageMode.EDOPageModeallows1,024randomaccesseswithinasinglerowwithaccesscycletimeasshortas20 | ISSIIntegrated Silicon Solution Inc 北京矽成北京矽成半導體有限公司 | ISSI | ||
1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION TheISSIIS41C16100andIS41LV16100are1,048,576x16-bithigh-performanceCMOSDynamicRandomAccessMemories.ThesedevicesofferanacceleratedcycleaccesscalledEDOPageMode.EDOPageModeallows1,024randomaccesseswithinasinglerowwithaccesscycletimeasshortas20 | ISSIIntegrated Silicon Solution Inc 北京矽成北京矽成半導體有限公司 | ISSI | ||
1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION TheISSIIS41C16100andIS41LV16100are1,048,576x16-bithigh-performanceCMOSDynamicRandomAccessMemories.ThesedevicesofferanacceleratedcycleaccesscalledEDOPageMode.EDOPageModeallows1,024randomaccesseswithinasinglerowwithaccesscycletimeasshortas20 | ISSIIntegrated Silicon Solution Inc 北京矽成北京矽成半導體有限公司 | ISSI | ||
1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION TheISSIIS41LV16100Ais1,048,576x16-bithigh-performanceCMOSDynamicRandomAccessMemories.ThesedevicesofferanacceleratedcycleaccesscalledEDOPageMode.EDOPageModeallows1,024randomaccesseswithinasinglerowwithaccesscycletimeasshortas20nsper16-bitword | ISSIIntegrated Silicon Solution Inc 北京矽成北京矽成半導體有限公司 | ISSI | ||
1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION TheISSIIS41LV16100Ais1,048,576x16-bithigh-performanceCMOSDynamicRandomAccessMemories.ThesedevicesofferanacceleratedcycleaccesscalledEDOPageMode.EDOPageModeallows1,024randomaccesseswithinasinglerowwithaccesscycletimeasshortas20nsper16-bitword | ISSIIntegrated Silicon Solution Inc 北京矽成北京矽成半導體有限公司 | ISSI | ||
1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION TheISSIIS41LV16100Ais1,048,576x16-bithigh-performanceCMOSDynamicRandomAccessMemories.ThesedevicesofferanacceleratedcycleaccesscalledEDOPageMode.EDOPageModeallows1,024randomaccesseswithinasinglerowwithaccesscycletimeasshortas20nsper16-bitword | ISSIIntegrated Silicon Solution Inc 北京矽成北京矽成半導體有限公司 | ISSI | ||
1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION TheISSIIS41LV16100Ais1,048,576x16-bithigh-performanceCMOSDynamicRandomAccessMemories.ThesedevicesofferanacceleratedcycleaccesscalledEDOPageMode.EDOPageModeallows1,024randomaccesseswithinasinglerowwithaccesscycletimeasshortas20nsper16-bitword | ISSIIntegrated Silicon Solution Inc 北京矽成北京矽成半導體有限公司 | ISSI | ||
1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION TheISSIIS41LV16100Ais1,048,576x16-bithigh-performanceCMOSDynamicRandomAccessMemories.ThesedevicesofferanacceleratedcycleaccesscalledEDOPageMode.EDOPageModeallows1,024randomaccesseswithinasinglerowwithaccesscycletimeasshortas20nsper16-bitword | ISSIIntegrated Silicon Solution Inc 北京矽成北京矽成半導體有限公司 | ISSI | ||
1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION TheISSIIS41LV16100Ais1,048,576x16-bithigh-performanceCMOSDynamicRandomAccessMemories.ThesedevicesofferanacceleratedcycleaccesscalledEDOPageMode.EDOPageModeallows1,024randomaccesseswithinasinglerowwithaccesscycletimeasshortas20nsper16-bitword | ISSIIntegrated Silicon Solution Inc 北京矽成北京矽成半導體有限公司 | ISSI | ||
1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION TheISSIIS41LV16100Ais1,048,576x16-bithigh-performanceCMOSDynamicRandomAccessMemories.ThesedevicesofferanacceleratedcycleaccesscalledEDOPageMode.EDOPageModeallows1,024randomaccesseswithinasinglerowwithaccesscycletimeasshortas20nsper16-bitword | ISSIIntegrated Silicon Solution Inc 北京矽成北京矽成半導體有限公司 | ISSI |
詳細參數(shù)
- 型號：
IS41LV16100
- 制造商：
ISSI
- 制造商全稱：
Integrated Silicon Solution, Inc
- 功能描述：
1M x 16(16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
ISSI |
24+ |
BGA QFP |
13500 |
免費送樣原盒原包現(xiàn)貨一手渠道聯(lián)系 |
詢價 | ||
ISSI |
23+ |
原裝 |
9680 |
價格優(yōu)勢/原裝現(xiàn)貨/客戶至上/歡迎廣大客戶來電查詢 |
詢價 | ||
ISSI |
23+ |
9920 |
原裝正品，支持實單 |
詢價 | |||
ISSI |
23+ |
98900 |
原廠原裝正品現(xiàn)貨!! |
詢價 | |||
ISSI |
23+ |
6000 |
只做原裝 |
詢價 | |||
ISSI |
23+ |
SSOP |
6500 |
專注配單,只做原裝進口現(xiàn)貨 |
詢價 | ||
ISSI |
24+ |
96880 |
只做原裝,歡迎來電資詢 |
詢價 | |||
ISSI |
23+ |
SSOP |
6500 |
專注配單,只做原裝進口現(xiàn)貨 |
詢價 | ||
ISSI |
TSOP44 |
0405+ |
1269 |
全新原裝進口自己庫存優(yōu)勢 |
詢價 | ||
ISSI |
23+ |
TSOP |
35890 |
詢價 |
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