IRLZ14_V01中文資料威世科技數(shù)據(jù)手冊PDF規(guī)格書

FEATURES

? Dynamic dV/dt rating

? Logic-level gate drive

? RDS(on) specified at VGS = 4 V and 5 V

? 175 °C operating temperature

? Fast switching

? Ease of paralleling

? Simple drive requirements

? Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

Note

* This datasheet provides information about parts that are

RoHS-compliant and / or parts that are non RoHS-compliant. For

example, parts with lead (Pb) terminations are not RoHS-compliant.

Please see the information / tables in this datasheet for details

DESCRIPTION

Third generation power MOSFETs from Vishay provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and

cost-effectiveness.

The TO-220AB package is universally preferred for all

commercial-industrial applications at power dissipation

levels to approximately 50 W. The low thermal resistance

and low package cost of the TO-220AB contribute to its

wide acceptance throughout the industry.