IRLR3303中文資料IRF數(shù)據(jù)手冊(cè)PDF規(guī)格書
IRLR3303規(guī)格書詳情
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.
? Logic-Level Gate Drive
? Ultra Low On-Resistance
? Surface Mount (IRLR3303)
? Straight Lead (IRLU3303)
? Advanced Process Technology
? Fast Switching
? Fully Avalanche Rated
產(chǎn)品屬性
- 型號(hào):
IRLR3303
- 功能描述:
MOSFET N-CH 30V 35A DPAK
- RoHS:
否
- 類別:
分離式半導(dǎo)體產(chǎn)品 >> FET - 單
- 系列:
HEXFET®
- 標(biāo)準(zhǔn)包裝:
1,000
- 系列:
MESH OVERLAY™ FET
- 型:
MOSFET N 通道,金屬氧化物 FET
- 特點(diǎn):
邏輯電平門
- 漏極至源極電壓(Vdss):
200V 電流 - 連續(xù)漏極(Id) @ 25°
- C:
18A 開態(tài)Rds(最大)@ Id, Vgs @ 25°
- C:
180 毫歐 @ 9A,10V Id 時(shí)的
- Vgs(th)(最大):
4V @ 250µA 閘電荷(Qg) @
- Vgs:
72nC @ 10V 輸入電容(Ciss) @
- Vds:
1560pF @ 25V 功率 -
- 最大:
40W
- 安裝類型:
通孔
- 封裝/外殼:
TO-220-3 整包
- 供應(yīng)商設(shè)備封裝:
TO-220FP
- 包裝:
管件
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
IR |
24+ |
TO-252 |
16800 |
絕對(duì)原裝進(jìn)口現(xiàn)貨,假一賠十,價(jià)格優(yōu)勢(shì)!? |
詢價(jià) | ||
IR |
17+ |
TO-252 |
6200 |
100%原裝正品現(xiàn)貨 |
詢價(jià) | ||
IR |
04+ |
TO-252 |
6000 |
庫存剛更新加微13425146986 |
詢價(jià) | ||
ir |
24+ |
500000 |
行業(yè)低價(jià),代理渠道 |
詢價(jià) | |||
IR |
24+ |
252 |
860000 |
明嘉萊只做原裝正品現(xiàn)貨 |
詢價(jià) | ||
Infineon Technologies |
21+ |
D-Pak |
3000 |
100%進(jìn)口原裝!長期供應(yīng)!絕對(duì)優(yōu)勢(shì)價(jià)格(誠信經(jīng)營)! |
詢價(jià) | ||
IR |
21+ |
TO-252 |
30000 |
百域芯優(yōu)勢(shì) 實(shí)單必成 可開13點(diǎn)增值稅 |
詢價(jià) | ||
IR/VISHAY |
22+ |
TO-252 |
100000 |
代理渠道/只做原裝/可含稅 |
詢價(jià) | ||
IR |
2023+ |
80000 |
一級(jí)代理/分銷渠道價(jià)格優(yōu)勢(shì) 十年芯程一路只做原裝正品 |
詢價(jià) | |||
IR |
21+ |
TO-252 |
30490 |
原裝現(xiàn)貨庫存 |
詢價(jià) |