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首頁 >IRGBC30>規(guī)格書列表

零件編號	下載訂購	功能描述/絲印	制造商上傳企業(yè)	LOGO
IRGBC30	文件：246.65 Kbytes Page：6 Pages	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=17A) Description InsulatedGateBipolarTransistors(IGBTs)fromInternationalRectifierhavehigherusablecurrentdensitiesthancomparablebipolartransistors,whileatthesametimehavingsimplergate-driverequirementsofthefamiliarpowerMOSFET.Theyprovidesubstantialbenefitstoahostof	IRF International Rectifier	IRF
IRGBC30F	文件：246.65 Kbytes Page：6 Pages	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=17A) Description InsulatedGateBipolarTransistors(IGBTs)fromInternationalRectifierhavehigherusablecurrentdensitiesthancomparablebipolartransistors,whileatthesametimehavingsimplergate-driverequirementsofthefamiliarpowerMOSFET.Theyprovidesubstantialbenefitstoahostof	IRF International Rectifier	IRF
IRGBC30FD2	文件：414.44 Kbytes Page：8 Pages	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY(Vces=600V, @Vge=15V, Ic=31A) Description Co-packagedIGBTsareanaturalextensionofInternationalRectifierswellknownIGBTline.TheyprovidetheconvenienceofanIGBTandanultrafastrecoverydiodeinonepackage,resultinginsubstantialbenefitstoahostofhigh-voltage,high-current,motorcontrol,UPSandpowers	IRF International Rectifier	IRF
IRGBC30K	文件：239.87 Kbytes Page：6 Pages	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=14A) Introduction Thereliabilityreportisasummaryofthetestdatacollatedsincetheimplementationofthereliabilityprogramme.Thisreportwillbeperiodicallyupdatedtypicallyonaquarterlybasis.Futurepublicationsofthisreportwillalsoincludeasappropriateadditionalinformationto	IRF International Rectifier	IRF
IRGBC30KD2	文件：145.33 Kbytes Page：9 Pages	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Short Circuit Rated UltraFast CoPack IGBT Introduction Thereliabilityreportisasummaryofthetestdatacollatedsincetheimplementationofthereliabilityprogramme.Thisreportwillbeperiodicallyupdatedtypicallyonaquarterlybasis.Futurepublicationsofthisreportwillalsoincludeasappropriateadditionalinformationto	IRF International Rectifier	IRF
IRGBC30K-S	文件：266.41 Kbytes Page：6 Pages	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=14A) Description InsulatedGateBipolarTransistors(IGBTs)fromInternationalRectifierhavehigherusablecurrentdensitiesthancomparablebipolartransistors,whileatthesametimehavingsimplergate-driverequirementsofthefamiliarpowerMOSFET.Theyprovidesubstantialbenefitstoahosto	IRF International Rectifier	IRF
IRGBC30M	文件：237.21 Kbytes Page：6 Pages	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=16A) Description InsulatedGateBipolarTransistors(IGBTs)fromInternationalRectifierhavehigherusablecurrentdensitiesthancomparablebipolartransistors,whileatthesametimehavingsimplergate-driverequirementsofthefamiliarpowerMOSFET.Theyprovidesubstantialbenefitstoahostof	IRF International Rectifier	IRF
IRGBC30MD2	文件：416.85 Kbytes Page：8 Pages	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY(Vces=600V, @Vge=15V, Ic=16A) Description Co-packagedIGBTsareanaturalextensionofInternationalRectifierswellknownIGBTline.TheyprovidetheconvenienceofanIGBTandanultrafastrecoverydiodeinonepackage,resultinginsubstantialbenefitstoahostofhigh-voltage,high-current,applications. Thesenewshort	IRF International Rectifier	IRF
IRGBC30M-S	文件：250 Kbytes Page：6 Pages	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=16A) Description InsulatedGateBipolarTransistors(IGBTs)fromInternationalRectifierhavehigherusablecurrentdensitiesthancomparablebipolartransistors,whileatthesametimehavingsimplergate-driverequirementsofthefamiliarpowerMOSFET.Theyprovidesubstantialbenefitstoahostof	IRF International Rectifier	IRF
IRGBC30S	文件：252.17 Kbytes Page：6 Pages	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=18A) Description InsulatedGateBipolarTransistors(IGBTs)fromInternationalRectifierhavehigherusablecurrentdensitiesthancomparablebipolartransistors,whileatthesametimehavingsimplergate-driverequirementsofthefamiliarpowerMOSFET.Theyprovidesubstantialbenefitstoahostof	IRF International Rectifier	IRF

詳細(xì)參數(shù)

型號：
IRGBC30
制造商：
IRF
制造商全稱：
International Rectifier
功能描述：
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=17A)

供應(yīng)商	型號	品牌	批號	封裝	庫存	備注	價格
深圳市勤思達(dá)科技有限公司	IRGBC30	IR	15+	TO-220	11560	全新原裝,現(xiàn)貨庫存,長期供應(yīng)	詢價
深圳市博浩通科技有限公司	IRGBC30	IR	23+	TO-220	3000	全新原裝	詢價
深圳市永貝爾科技有限公司	IRGBC30	IRF	23+	NA	19960	只做進(jìn)口原裝,終端工廠免費送樣	詢價
貿(mào)澤芯城（深圳）電子科技有限公司	IRGBC30	IR	23+	TO	13800	原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種	詢價
深圳市河鋒鑫科技有限公司	IRGBC30	IR	22+	TO220	6000	終端可免費供樣,支持BOM配單	詢價
深圳市創(chuàng)新跡電子有限公司	IRGBC30	IR	23+	TO220	8000	專注配單,只做原裝進(jìn)口現(xiàn)貨	詢價
深圳市安富世紀(jì)電子有限公司	IRGBC30	IR	23+	TO220	8000	專注配單,只做原裝進(jìn)口現(xiàn)貨	詢價
天津市博通航睿技術(shù)有限公司	IRGBC30	IR	23+	TO220	7000		詢價
深圳市一線半導(dǎo)體有限公司	IRGBC30UD	IR	24+	TO-220-3	8866		詢價
深圳市昌和盛利電子有限公司	IRGBC30UD2	IR	23+	TO-220	35890		詢價

更多IRGBC30供應(yīng)商更新時間2025-4-17 11:04:00

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