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IRFZ44NSPBF中文資料IRF數(shù)據(jù)手冊(cè)PDF規(guī)格書
IRFZ44NSPBF規(guī)格書詳情
Description
Advanced HEXFET? Power MOSFETs from international Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device designed that HEXFET power MOSFETs are well known for, provides the designed with an extremely efficient and reliable device for use in a wide variety of applications.
● Advanced Process Technology
● Surface Mount (IRFZ44NS)
● Low-profile through-hole (IRFZ44NL)
● 175°C Operating Temperature
● Fsst Switching
● Fully Avalanche Rated
● Lead-Free
產(chǎn)品屬性
- 型號(hào)：
IRFZ44NSPBF
- 功能描述：
MOSFET 60V 1 N-CH HEXFET 17.5mOhms 16.7nC
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶體管極性：
N-Channel
- 汲極/源極擊穿電壓：
650 V
- 閘/源擊穿電壓：
25 V
- 漏極連續(xù)電流：
130 A 電阻汲極/源極
- RDS（導(dǎo)通）：
0.014 Ohms
- 配置：
Single
- 安裝風(fēng)格：
Through Hole
- 封裝/箱體：
Max247
- 封裝：
Tube
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
IR |
2020+ |
TO-263 |
8000 |
只做自己庫存,全新原裝進(jìn)口正品假一賠百,可開13%增 |
詢價(jià) | ||
Infineon Technologies |
22+ |
TO2633 D2Pak (2 Leads + Tab) T |
9000 |
原廠渠道,現(xiàn)貨配單 |
詢價(jià) | ||
IR |
11+ |
TO-263 |
30 |
詢價(jià) | |||
IR |
23+ |
TO-263 |
28000 |
原裝正品 |
詢價(jià) | ||
IR |
TO263 |
68900 |
原包原標(biāo)簽100%進(jìn)口原裝常備現(xiàn)貨! |
詢價(jià) | |||
IR |
21+ |
TO-263 |
9852 |
只做原裝正品現(xiàn)貨!或訂貨假一賠十! |
詢價(jià) | ||
IR |
24+ |
TO-263 |
65300 |
一級(jí)代理/放心購買! |
詢價(jià) | ||
Infineon(英飛凌) |
23+ |
D2PAK |
7793 |
支持大陸交貨,美金交易。原裝現(xiàn)貨庫存。 |
詢價(jià) | ||
IR |
2022+ |
TO-263 |
30000 |
進(jìn)口原裝現(xiàn)貨供應(yīng),原裝 假一罰十 |
詢價(jià) | ||
IR |
24+ |
TO-263 |
860000 |
明嘉萊只做原裝正品現(xiàn)貨 |
詢價(jià) |
