IRFW710B中文資料仙童半導(dǎo)體數(shù)據(jù)手冊PDF規(guī)格書
IRFW710B規(guī)格書詳情
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies and electronic lamp ballasts based on half bridge.
Features
? 2.0A, 400V, RDS(on) = 3.4? @VGS = 10 V
? Low gate charge ( typical 7.7 nC)
? Low Crss ( typical 6.0 pF)
? Fast switching
? 100 avalanche tested
? Improved dv/dt capability
產(chǎn)品屬性
- 型號:
IRFW710B
- 功能描述:
MOSFET 400V N-Channel B-FET
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶體管極性:
N-Channel
- 汲極/源極擊穿電壓:
650 V
- 閘/源擊穿電壓:
25 V
- 漏極連續(xù)電流:
130 A 電阻汲極/源極
- RDS(導(dǎo)通):
0.014 Ohms
- 配置:
Single
- 安裝風(fēng)格:
Through Hole
- 封裝/箱體:
Max247
- 封裝:
Tube
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
onsemi(安森美) |
23+ |
D2PAK |
7350 |
現(xiàn)貨供應(yīng),當(dāng)天可交貨!免費(fèi)送樣,原廠技術(shù)支持!!! |
詢價(jià) | ||
SAMSUNG |
21+ |
35200 |
一級代理/放心采購 |
詢價(jià) | |||
FAIRCHILD |
23+ |
TO-263 |
9526 |
詢價(jià) | |||
FAI |
22+23+ |
TO263 |
73062 |
絕對原裝正品現(xiàn)貨,全新深圳原裝進(jìn)口現(xiàn)貨 |
詢價(jià) | ||
FAIRCHILD |
2023+ |
TO-263 |
4675 |
全新原廠原裝產(chǎn)品、公司現(xiàn)貨銷售 |
詢價(jià) | ||
FAIRCHILDRCHILD |
23+ |
SOT263 |
8000 |
只做原裝現(xiàn)貨 |
詢價(jià) | ||
FAIRCHILDRCHILD |
23+ |
SOT263 |
7000 |
詢價(jià) | |||
FAIRCHILDrchild |
22+ |
SOT263 |
25000 |
只做原裝進(jìn)口現(xiàn)貨,專注配單 |
詢價(jià) | ||
FAIRCHILD/仙童 |
23+ |
TO |
10000 |
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價(jià)格優(yōu)勢、品種 |
詢價(jià) | ||
FAIRCHILDRCHILD |
2022+ |
SOT263 |
29880 |
原廠代理 終端免費(fèi)提供樣品 |
詢價(jià) |