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IRFW610B

200V N-Channel MOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

IRL610

AdvancedPowerMOSFET

BVDSS=200V RDS(on)=0.046? ID=3.3A FEATURES ?AvalancheRuggedTechnology ?RuggedGateOxideTechnology ?LowerInputCapacitance ?ImprovedGateCharge ?ExtendedSafeOperatingArea ?LowerLeakageCurrent:10μA(Max.)@VDS=200V ?LowerRDS(ON):1.185?(Typ.)

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

IRL610A

AdvancedPowerMOSFET

BVDSS=200V RDS(on)=0.046? ID=3.3A FEATURES ?AvalancheRuggedTechnology ?RuggedGateOxideTechnology ?LowerInputCapacitance ?ImprovedGateCharge ?ExtendedSafeOperatingArea ?LowerLeakageCurrent:10μA(Max.)@VDS=200V ?LowerRDS(ON):1.185?(Typ.)

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

IRL610A

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IRLI610A

AdvancedPowerMOSFET

BVDSS=200V RDS(on)=1.5? ID=3.3A FEATURES ?AvalancheRuggedTechnology ?RuggedGateOxideTechnology ?LowerInputCapacitance ?ImprovedGateCharge ?ExtendedSafeOperatingArea ?150°COperatingTemperature ?LowerLeakageCurrent:10μA(Max.)@VDS=200V ?LowerRDS(ON):

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

IRLI610A

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IRLS610A

AdvancedPowerMOSFET

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

IRLS610A

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IRLW610A

AdvancedPowerMOSFET

BVDSS=200V RDS(on)=1.5? ID=3.3A FEATURES ?AvalancheRuggedTechnology ?RuggedGateOxideTechnology ?LowerInputCapacitance ?ImprovedGateCharge ?ExtendedSafeOperatingArea ?150°COperatingTemperature ?LowerLeakageCurrent:10μA(Max.)@VDS=200V ?LowerRDS(ON):

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

IRLW610A

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

詳細參數(shù)

  • 型號：

    IRFW610B

  • 制造商：

    FAIRCHILD

  • 制造商全稱：

    Fairchild Semiconductor

  • 功能描述：

    200V N-Channel MOSFET

供應商型號品牌批號封裝庫存備注價格
仙童
05+
TO-263
3800
原裝進口
 詢價
FAIRCHILD
23+
TO-263
9526
詢價
FAIRCHIL
23+
TO-263
9500
專業(yè)優(yōu)勢供應
 詢價
FAIRCHILD
23+
NA
19960
只做進口原裝,終端工廠免費送樣
 詢價
IR
23+
TO-263
4500
全新原裝、誠信經(jīng)營、公司現(xiàn)貨銷售
 詢價
FAIRCHILD/仙童
23+
2
6500
專注配單,只做原裝進口現(xiàn)貨
 詢價
FAIRCHILD
2025+
TO-263
4675
全新原廠原裝產(chǎn)品、公司現(xiàn)貨銷售
 詢價
FAIRCHILD/仙童
23+
2
6500
專注配單,只做原裝進口現(xiàn)貨
 詢價
harris
16+
原廠封裝
10000
全新原裝正品,代理優(yōu)勢渠道供應,歡迎來電咨詢
 詢價
FSC/ON
23+
原包裝原封 □□
1600
原裝進口特價供應 QQ 1304306553 更多詳細咨詢 庫存
 詢價
更多IRFW610B供應商 更新時間2025-3-17 16:08:00

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