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IRFU3710ZPbF中文資料英飛凌數(shù)據(jù)手冊PDF規(guī)格書
IRFU3710ZPbF規(guī)格書詳情
Description
This HEXFET? Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
Features
● Advanced Process Technology
● Ultra Low On-Resistance
● 175°C Operating Temperature
● Fast Switching
● Repetitive Avalanche Allowed up to Tjmax
● Multiple Package Options
● Lead-Free
產(chǎn)品屬性
- 型號：
IRFU3710ZPBF
- 功能描述：
MOSFET MOSFT 100V 56A 18mOhm 69nC Qg
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶體管極性：
N-Channel
- 汲極/源極擊穿電壓：
650 V
- 閘/源擊穿電壓：
25 V
- 漏極連續(xù)電流：
130 A 電阻汲極/源極
- RDS（導(dǎo)通）：
0.014 Ohms
- 配置：
Single
- 安裝風(fēng)格：
Through Hole
- 封裝/箱體：
Max247
- 封裝：
Tube
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
IR |
24+ |
TO-251 |
219 |
詢價 | |||
IR |
21+ |
TO-251 |
12588 |
原裝正品,自己庫存 假一罰十 |
詢價 | ||
IR/INFI |
2020+ |
TO-251 |
80000 |
只做自己庫存,全新原裝進(jìn)口正品假一賠百,可開13%增 |
詢價 | ||
NA |
19+ |
75100 |
原廠代理渠道,每一顆芯片都可追溯原廠； |
詢價 | |||
IR |
2020+ |
TO-251 |
22000 |
全新原裝正品 現(xiàn)貨庫存 價格優(yōu)勢 |
詢價 | ||
Infineon Technologies |
23+ |
原裝 |
8000 |
只做原裝現(xiàn)貨 |
詢價 | ||
IR |
2018+ |
TO251 |
6528 |
只做原裝正品假一賠十!只要網(wǎng)上有上百分百有庫存放心 |
詢價 | ||
Infineon Technologies |
22+ |
TO2513 Short Leads IPak TO251A |
9000 |
原廠渠道,現(xiàn)貨配單 |
詢價 | ||
Infineon Technologies |
21+ |
TO2513 Short Leads IPak TO251A |
13880 |
公司只售原裝,支持實單 |
詢價 | ||
IR |
16+ |
TO-251 |
6086 |
全新原裝/深圳現(xiàn)貨庫2 |
詢價 |
