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IRFU310

Power MOSFET(Vdss=400V, Rds(on)=3.6ohm, Id=1.7A)

IRF

International Rectifier

IRFU310

Power MOSFET

DESCRIPTION ThirdgenerationpowerMOSFETsformVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest

VishayVishay Siliconix

威世科技威世科技半導體

IRFU310

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsformVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest

KERSEMI

Kersemi Electronic Co., Ltd.

IRFU310

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsformVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest

KERSEMI

Kersemi Electronic Co., Ltd.

IRFU310

Power MOSFET

FEATURES ?DynamicdV/dtrating ?Repetitiveavalancherated ?Surface-mount(IRFR310,SiHFR310) ?Straightlead(IRFU310,SiHFU310) ?Availableintapeandreel ?Fastswitching ?Fullyavalancherated ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc

VishayVishay Siliconix

威世科技威世科技半導體

IRFU310

iscN-Channel MOSFET Transistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IRFU310A

Advanced Power MOSFET

FEATURES ?AvalancheRuggedTechnology ?RuggedGateOxideTechnology ?LowerInputCapacitance ?ImprovedGateCharge ?ExtendedSafeOperatingArea ?LowerLeakageCurrent:10μA(Max.)@VDS=400V ?LowRDS(ON):2.815?(Typ.)

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

IRFU310B

400V N-Channel MOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

IRFU310B

400V N-Channel MOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi

KERSEMI

Kersemi Electronic Co., Ltd.

IRFU310PBF

Power MOSFET

DESCRIPTION ThirdgenerationpowerMOSFETsformVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest

VishayVishay Siliconix

威世科技威世科技半導體

IRFU310PBF

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsformVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest

KERSEMI

Kersemi Electronic Co., Ltd.

IRFU310A

isc N-Channel MOSFET Transistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IRFU310B

isc N-Channel MOSFET Transistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IRFU310PBF

HEXFET POWER MOSFET ( VDSS=400V , RDS(on)=3.6廓 , ID=1.7A )

IRF

International Rectifier

IRFU310PBF

Power MOSFET

VishayVishay Siliconix

威世科技威世科技半導體

詳細參數(shù)

  • 型號:

    IRFU310

  • 功能描述:

    MOSFET N-Chan 400V 1.7 Amp

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

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更多IRFU310供應商 更新時間2025-1-8 15:01:00