IRFU2605中文資料IRF數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)
IRFU2605規(guī)格書(shū)詳情
VDSS = 55V
RDS(on) = 0.075?
ID = 19A
Description
Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques that achieve extremely low on-resistance per silicon area and allow electrostatic discharge protection to be integrated in the gate structure. These benefits, combined with the ruggedized device design that HEXFETs are known for, provide the designer with extremely efficient and reliable device for use in a wide variety of applications. The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications.
● Ultra Low On-Resistance
● ESD Protected
● Surface Mount (IRFR2605)
● Straight Lead (IRFU2605)
● 150°C Operating Temperature
● Repetitive Avalanche Rated
● Fast Switching
產(chǎn)品屬性
- 型號(hào):
IRFU2605
- 制造商:
IRF
- 制造商全稱:
International Rectifier
- 功能描述:
Power MOSFET(Vdss=55V, Rds(on)=0.075ohm, Id=19A)
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
Infineon(英飛凌) |
23+ |
TO251 |
7350 |
現(xiàn)貨供應(yīng),當(dāng)天可交貨!免費(fèi)送樣,原廠技術(shù)支持!!! |
詢價(jià) | ||
IR |
23+ |
TO-251 |
35890 |
詢價(jià) | |||
IR |
22+ |
TO-251 |
4500 |
全新原裝品牌專營(yíng) |
詢價(jià) | ||
IR |
24+ |
I-PAK |
16800 |
絕對(duì)原裝進(jìn)口現(xiàn)貨,假一賠十,價(jià)格優(yōu)勢(shì)!? |
詢價(jià) | ||
IR |
23+ |
I-PAK |
7300 |
專注配單,只做原裝進(jìn)口現(xiàn)貨 |
詢價(jià) | ||
IR |
24+ |
TO-251 |
440 |
詢價(jià) | |||
IR/VISHAY |
23+ |
TO-251 |
43000 |
原廠授權(quán)一級(jí)代理,專業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種 |
詢價(jià) | ||
IR |
2023+ |
TO-251 |
4675 |
全新原廠原裝產(chǎn)品、公司現(xiàn)貨銷售 |
詢價(jià) | ||
IR |
23+ |
TO-251 |
9500 |
專業(yè)優(yōu)勢(shì)供應(yīng) |
詢價(jià) | ||
Infineon Technologies |
21+ |
TO2513 Short Leads IPak TO251A |
13880 |
公司只售原裝,支持實(shí)單 |
詢價(jià) |