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IRFU2605中文資料IRF數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)

IRFU2605
廠商型號(hào)

IRFU2605

功能描述

Power MOSFET(Vdss=55V, Rds(on)=0.075ohm, Id=19A)

文件大小

345.03 Kbytes

頁(yè)面數(shù)量

8 頁(yè)

生產(chǎn)廠商 International Rectifier
企業(yè)簡(jiǎn)稱

IRF

中文名稱

International Rectifier官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

下載地址一下載地址二到原廠下載

更新時(shí)間

2025-1-10 23:00:00

IRFU2605規(guī)格書(shū)詳情

VDSS = 55V

RDS(on) = 0.075?

ID = 19A

Description

Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques that achieve extremely low on-resistance per silicon area and allow electrostatic discharge protection to be integrated in the gate structure. These benefits, combined with the ruggedized device design that HEXFETs are known for, provide the designer with extremely efficient and reliable device for use in a wide variety of applications. The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications.

● Ultra Low On-Resistance

● ESD Protected

● Surface Mount (IRFR2605)

● Straight Lead (IRFU2605)

● 150°C Operating Temperature

● Repetitive Avalanche Rated

● Fast Switching

產(chǎn)品屬性

  • 型號(hào):

    IRFU2605

  • 制造商:

    IRF

  • 制造商全稱:

    International Rectifier

  • 功能描述:

    Power MOSFET(Vdss=55V, Rds(on)=0.075ohm, Id=19A)

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