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IRFU120ZPBF中文資料KERSEMI數(shù)據(jù)手冊PDF規(guī)格書

IRFU120ZPBF
廠商型號(hào)

IRFU120ZPBF

功能描述

AUTOMOTIVE MOSFET

文件大小

4.26012 Mbytes

頁面數(shù)量

11

生產(chǎn)廠商 Kersemi Electronic Co., Ltd.
企業(yè)簡稱

KERSEMI

中文名稱

Kersemi Electronic Co., Ltd.官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊

下載地址一下載地址二

更新時(shí)間

2024-12-23 22:30:00

IRFU120ZPBF規(guī)格書詳情

AUTOMOTIVE MOSFET

Description

Specifically designed for Automotive applications, this HEXFET? Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.

Features

● Advanced Process Technology

● Ultra Low On-Resistance

● 175°C Operating Temperature

● Fast Switching

● Repetitive Avalanche Allowed up to Tjmax

● Lead-Free

產(chǎn)品屬性

  • 型號(hào):

    IRFU120ZPBF

  • 功能描述:

    MOSFET MOSFT 100V 8.7A 190mOhm 6.9nC Qg

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

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